An electronic static discharge (ESD) protection device with a bidirectional silicon controlled rectifier (SCR) structure embedded with an interdigital N-channel metal oxide semiconductor (NMOS) can be applied to an ESD protection circuit of an on-chip integrated circuit (IC) and mainly comprises a P substrate, a P epitaxial layer, a first N pit, a P pit, a second N pit, a first N+ injection region, a first P+ injection region, a second N+ injection region, a third N+ injection region, a second P+ injection region, a fourth N+ injection region, a fifth N+ injection region, a third P+ injection region, a sixth N+ injection region, a plurality of poly-silicon gates, a plurality of thin gate oxide layers and a plurality of shallow isolation grooves. On one hand, under the positive and negative ESD pulse effects, an ESD current discharge path with a symmetric structure and complete same electrical property exists in the device, the ESD current discharge ability of the device can be improved, and bidirectional protection of an ESD pulse is achieved; and on the other hand, the interdigital NMOS composed of an NMOS M<1> and an NMOS M<2> and a parasitic P pit resistor form a resistance-capacitance coupling current path, so that the ESD robustness of the device is enhanced, the current density in an SCR current conduction path is reduced, the conduction resistance of the SCR is increased, and the maintaining voltage is increased.