117results about How to "High Power Handling Capability" patented technology

A tunable transmissive grating comprises a transmissive dispersive element, a reflective element, and an angle θ formed between the two elements. A first optical path is formed according to the angle θ, wherein light dispersing from the dispersive element is directed onto the reflective element and reflects therefrom. At least one element is rotatable about a rotational center to cause a second optical path and thereby tune the wavelength of the light reflecting from the reflective element. Both elements can be rotatable together around a common rotational center point according to certain embodiments, and/or each element can be independently rotated around a rotational axis associated only with that element. According to some embodiments, the relative angle θ formed between the elements is held constant; however, in other embodiments θ can vary.

A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.

A high power high temperature superconductive circuit for use in various microwave devices including filters, dielectric resonator filters, multiplexers, transmission lines, delay lines, hybrids and beam-forming networks has thin gold films deposited either on a substrate or on top of the high temperature superconductive film. Alternatively, other metal films can be used or a plurality of dielectric films can be used or a dielectric constant gradient substrate can be used. The use of these materials in a part or parts of a microwave circuit reduces the current density in those parts compared to the level of current density if only high temperature superconductive film is used. This increases the power handling capability of the circuit.

Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a −60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.

The present invention is directed to a coupler that includes a coupler structure including at least one first transmission line disposed on a first major surface of a coupler dielectric substrate and at least one second transmission line disposed on a second major surface of the coupler dielectric substrate. The coupler structure includes four symmetric ports such that each port of the four symmetric ports is characterized by substantially identical impedance characteristics. A first ground plane structure is coupled to the coupler structure and including a first outer dielectric material and a first conductive exterior layer disposed substantially parallel to the first major surface. A second ground plane structure is coupled to the coupler structure and including a second outer dielectric material and a second conductive exterior layer disposed substantially parallel to the second major surface. A thermal path is disposed between the coupler structure and at least one of the first conductive exterior layer or second conductive exterior layer. The thermal path is characterized by a thermal resistance substantially within a range between 15 W/mK and 50 W/mK, such that the coupler has a power handling capability of more than 800 W per square inch of heat sink interface.

A power electronic device package comprising a base member, a device layer, multiple leads, and an encapsulant is provided. The base member is thermally conductive for heat dissipation. The device layer comprises one or more power electronic devices mounted on the base member. The power electronic devices are selectively electrically connected to each other and to the base member to form an internal electronic circuit. The leads extend outwardly from the base member and are electrically connected to the internal electronic circuit. The encapsulant encases the internal electronic circuit, a portion of the base member, and a portion of the leads. The power electronic device package is configured as a transfer molded power module with multiple leads and increased power handling capability. In an embodiment, the base member is electrically conductive to operate as an electrical terminal. The base member may also be isolatably connected to the internal electronic circuit.

A dynamic braking circuit for an electronic motor drive shunts the DC link of the drive with a resistor using two control strategies. The first control strategy used for lower levels of braking employs a pulse width modulated signal and the second control strategy used for higher levels of braking uses a hysteretic signal significantly reducing switching losses in the semiconductor devices controlling the dynamic braking resistor allowing higher braking capacity.

Method for synchronizing inverter units (INU11, INU12) that are connected in parallel and supply a motor, and a parallel connection arrangement, in which motor is either one winding, which is supplied by inverter units connected in parallel, or a plurality of parallel windings, in which each winding is supplied by its own inverter unit, in which parallel connection one inverter unit functions as a master and the others as slaves, in which method a telecommunications bus is arranged between the units, and in which each inverter unit has its own modulation cycle counter, which are synchronized with each other on the basis of telecommunications messages, preferably serial telecommunications messages. In the invention all the inverter units take into memory the value of their own modulation counter at the termination time of a telecommunications message (Mes2), the master inverter unit sends the reading of its own counter in the following message to the other inverter units, and the other inverter units correct the reading notified by the master on the basis of the readings of their own modulation counters in the direction that makes the counters operate as simultaneously as possible.

A thin-film, radio frequency terminator is provided that includes a mounting flange and a thin-film termination chip mounted on a surface of the mounting flange. The mounting flange grounds the termination chip. The termination chip includes a substrate, a terminal, a metallization layer including a resistor pad electrically connecting the terminal to the mounting flange, and a cover. The terminator has a low physical profile but provides high power handling capability.