The invention discloses a
silicon-based GaN HEMT (
High Electron Mobility
Transistor) heat dissipation enhanced packaging structure and a preparation method thereof, and belongs to the field of information materials and devices, the structure takes a substrate (1) as a carrier and is connected with a
high heat conduction layer (2) in a
chip bonding mode, the upper part of the
high heat conduction layer (2) is connected with a GaN HEMT, and the lower part of the
high heat conduction layer (2) is connected with a
silicon-based GaN HEMT. The GaN HEMT sequentially comprises a GaN buffer layer (3), a GaN channel layer (4), an AlGaN
barrier layer (5), a medium
passivation layer (9) and a
metal electrode from bottom to top. According to the prepared structure, the low-heat-
conductivity silicon substrate of the silicon-based GaN HEMT is peeled off, the high-heat-
conductivity material is connected with the substrate, the heat accumulation effect caused by the silicon-based material is avoided, the heat dissipation capacity of the high-power-density GaN HEMT
chip is improved, the structure is compatible with an existing advanced packaging structure and a packaging heat dissipation technology, and the manufacturing cost is reduced. The
electric heating performance and the reliability of the packaged
chip can be remarkably improved, and the high value is achieved.