The invention provides a
copper-
copper metal thermal pressing bonding method. The method at least comprises the following steps: first of all, providing a first
wafer to be bonded and a second
wafer to be bonded, wherein the first water comprises a first substrate, a first
passivation layer and a first Ti-Cu
alloy film, and the second
wafer comprises a second substrate, a second
passivation layer and a second Ti-Cu
alloy film; then, performgin thermal pressing bonding on the surface of the first Ti-Cu
alloy film of the first wafer and the surface of the second Ti-Cu alloy film of the second wafer; and finally, performing annealing
processing in a protective gas to enable Ti atoms in the first Ti-Cu alloy film to diffuse towards the surface of the first
passivation layer and Ti atoms in the second Ti-Cu alloy film to diffuse towards the surface of the second passivation layer so as to finally form Ti
adhesive / barrier
layers on the surfaces of the first passivation layer and the second passivation layer, and Cu atoms diffusing towards a bonding surface so as to realize bonding. According to the method provided by the invention, before the bonding, what is needed is only to respectively perform co-
sputtering on the two substrates for once, such that the
sputtering frequency is reduced by half, the process is relatively simple, the reliability is good, the technical cost is quite low, and finally, the Ti
adhesive /
barrier layer are formed through
diffusion after the annealing
processing, and the
copper bonding effect is better.