50 results about "Silicon microstructures" patented technology

An isolation method for a single crystalline silicon microstructure using a triple layer structure is disclosed. The method includes forming the triple layer composed of an insulation layer formed over an exposed surface of the silicon microstructure, a conductive layer formed over the entire insulation layer, and a metal layer formed over a top portion of the microstructure; and partially etching the conductive layer to form electrical isolation between parts of the microstructure. The method does not require a separate photolithography process for isolation, and can be effectively applied to microstructures having high aspect ratios and narrow trenches. Also disclosed are single crystalline silicon microstructures having a triple layer isolation structure formed using the disclosed method.

The invention belongs to the technical field of marine antifouling material preparation, and particularly relates to a preparation method of a microstructure surface with alternate hydrophilic-hydrophobic distribution. The method is characterized in that a monocrystalline silicon surface is covered by a photomask with a set pattern obtained through electron beam etching, and the set pattern with aset depth is obtained through etching; the etched monocrystalline silicon surface is used as a female die, and a hydrophobic organic silicon microstructure surface with a set structure is obtained through etching rollover; and through processes including plasma processing, hydrogen peroxide activation, hydrophobic liquid hole sealing, washing and hydrogel filling, an organic silicon microstructure is filled with hydrogel in an orderly manner, so that the regularly-structured microarray surface with the alternate hydrophilic-hydrophobic distribution is obtained. The method has the advantages that the height of the hydrogel in a microarray can be controlled to adjust projection area proportions and space area proportions of hydrophilic areas and hydrophobic areas in the microstructure surface with the alternate hydrophilic-hydrophobic distribution, so that a hydrophilic-hydrophobic microstructure is achieved, the broad-spectrum antifouling performance of a microstructure material is improved, and the method can be used for preventing and removing biofouling on the surfaces of ships and marine structures.

The invention relates to a vector hydrophone and specifically relates to a high-sensitivity resonant MEMS (Micro Electro Mechanical System) vector hydrophone structure. The high-sensitivity resonant MEMS vector hydrophone structure is used for solving the problems of poor antijamming capability and low sensitivity of the existing vector hydrophone. The high-sensitivity resonant MEMS vector hydrophone structure comprises a four-beam arm silicon microstructure, a micro cylindrical body, a central connector, driving electrodes and detection electrodes, wherein the four-beam arm silicon microstructure and the central connector are located in the same plane; the lower end of the micro cylindrical body is vertically fixed in the center of the upper surface of the central connector; eight driving electrodes and eight detection electrodes are arranged; the first driving electrode is paved on the left front part of the upper surface of the front beam arm of the four-beam arm silicon microstructure, while the second driving electrode is paved on the left rear part of the upper surface of the front beam arm of the four-beam arm silicon microstructure. The high-sensitivity resonant MEMS vector hydrophone structure is applicable to accurate positioning and measurement of underwater acoustic pressure signals.

The invention discloses a high-precision photodynamic accelerometer based on a zipper type photonic crystal micro-nano cavity. The accelerometer comprises a laser input and reception structure arranged in the left and right sides of the accelerometer structure, a silicon micro mechanical structure arranged in the middle portion of the accelerometer, and a glass substrate structure positioned in the bottom of the silicon micro mechanical structure and provided with electrodes. A laser incident structure is arranged in an input groove in the left side of a main silicon microstructure, a reception structure is arranged in an output groove in the right side of the main silicon microstructure. An optical signal serves as a measurement signal of the micro accelerometer, the sensitivity is high,the uncertainty is low, the detection limit of the micro accelerometer is improved, and the detection sensitivity is improved greatly. The zipper type photonic crystal micro-nano cavity is used, the performance is more stable and the optical precision is higher compared with a common planar parallel resonance micro-nano cavity at present, and higher acceleration sensitivity is achieved.

The invention discloses a silicon microstructure processing method based on femtosecond laser treatment and wet etching. The method comprises the steps of scanning a monocrystal silicon substrate by using a femtosecond laser at an oxygen-containing gas atmosphere; inducing silicon to generate refractive index change in a scanning region; and then, etching by using a hydrofluoric acid wet process to remove a refractive index change region to form a silicon microstructure. The method disclosed by the invention is simple in process; compared with the prior art, the method has the advantage that a distribution drawing of the microstructure does not need to be defined by using a mask plate; compared with the ordinary wet etching and dry etching, the method has the advantages that the corrosion selectivity is good, the etching region is completely determined by a femtosecond laser processing region, and no sidewise underetching exists; and a silicon slot with high depth-to-width ratio and large depth can be obtained during deep silicon slot processing. The method disclosed by the invention can be applied to a micro-electro-mechanical system.

The invention discloses a masking method for deep-etching a multi-layer silicon structure by a dry method. The masking method comprises the following steps of: A, photoetching an Az positive photoresist pattern; B, performing the deep-etching on a silicon structure by taking the obtained Az positive photoresist pattern as a mask; C, cleaning the Az mask and the silicon structure, and coating a first layer of Su8 negative photoresist; D, photoetching the Su8 photoresist to obtain a mask pattern of a lower structure by an alignment mark; and E, deep-etching a lower silicon structure by taking the pattern obtained from the step D as the mask; and repeating the steps to obtain the multi-layer silicon microstructure with greater structure depth. The method has the advantages that: because the Su8 photoresist is selected as the mask for deep reactive ion etching of the inductively coupled plasmas, an effect of protecting an etched structure is achieved and the direct physical bombardment ofions caused by exposing a previous etching structure in the plasmas is effectively avoided; and the method has high process repeatability, can be used in the same component repeatedly and realizes three or more layers of monocrystalline silicon microstructures with a high aspect ratio.