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Microelectronic air pressure sensor and preparation method therefor

An air pressure sensor, microelectronics technology, applied in electrical components, piezoelectric devices/electrostrictive devices, fluid pressure measurement using capacitance changes, etc., can solve problems such as poor reliability, difficult packaging, etc. The effect of short time and low power consumption

Inactive Publication Date: 2017-04-26
HOHAI UNIV CHANGZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main defects of these two kinds of air pressure sensors are: (1) For capacitive air pressure sensors, the main problem is that the electrodes are drawn out, and due to the existence of a movable electrode, the packaging is difficult and the reliability is poor; (2) For piezoresistive air pressure sensors Air pressure sensor, this type of air pressure sensor has high requirements for design, and has strict requirements for the size, shape and placement of the piezoresistive

Method used

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  • Microelectronic air pressure sensor and preparation method therefor
  • Microelectronic air pressure sensor and preparation method therefor
  • Microelectronic air pressure sensor and preparation method therefor

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Embodiment 1

[0028] Such as Figure 1 to Figure 3 As shown, the microelectronic air pressure sensor provided by the present invention is prepared through the following steps:

[0029] (A) N-type (100) single crystal silicon is used as the substrate 1, and a shallow groove of 1-10 μm is etched on the single crystal silicon substrate 1 through an anisotropic reactive ion etching RIE process;

[0030] (B) While protecting the sidewalls of the shallow grooves of the single crystal silicon substrate 1, isotropic etching is performed on the single crystal silicon substrate to prepare for the next epitaxial single crystal silicon cavity sealing process;

[0031] (C) Epitaxially grow single crystal silicon, forming a sealed cavity 7 inside the single crystal silicon substrate, the cavity height is about 5μm;

[0032] (D) Sequentially grow silicon oxide 2 and silicon nitride 3 on the upper surface of the single crystal silicon substrate 1, and form contact holes by photolithography and etching;

[0033] (E)...

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Abstract

The invention discloses a microelectronic air pressure sensor based on the technology of monocrystalline silicon epitaxial cavity sealing and a preparation method for the microelectronic air pressure sensor, specifically a capacitive-type air pressure sensor based on the MEMS micromachining technique. Because the epitaxial monocrystalline silicon technology is mature, a formed silicon microstructure is good in mechanical performances, and especially the cavity structure formed through the epitaxial monocrystalline silicon technology is excellent in sealing performance. Therefore, the capacitance of the capacitive-type air pressure sensor is mainly determined by the thickness of a film, and is affected by the environment temperature and pressure. Based on the theory of the dielectric flexible effect, the dielectric constant of a capacitor dielectric material changes with the withstood pressure, and is monotonous apparently. The above characteristic can achieve the data detection of pressure or air pressure. Combining with the MEMS micromachining technique, the sensor is small in size, is low in power consumption, and is short in response time.

Description

Technical field [0001] The invention relates to a microelectronic air pressure sensor and a preparation method thereof, in particular to an air pressure sensor based on MEMS micro-processing technology and a preparation method thereof, and belongs to the technical field of microelectronic mechanical systems. Background technique [0002] The sensing principle of the conventional air pressure sensor mainly includes two kinds of capacitive sensing and piezoresistive sensing. The principle of capacitive sensing is that under the action of pressure, a movable electrode of a capacitor is displaced, the capacitance spacing changes, and the capacitance value changes. The principle of piezoresistive induction is that under pressure, the resistance of the membrane changes due to the stress generated by the membrane deformation. The main disadvantages of these two types of air pressure sensors are: (1) For capacitive air pressure sensors, the main problem is that the electrodes are drawn ...

Claims

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Application Information

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IPC IPC(8): B81B3/00B81C1/00G01L9/12
CPCB81B3/0021B81C1/00182G01L9/12
Inventor 齐本胜蔡春华朱念芳华迪谈俊燕
Owner HOHAI UNIV CHANGZHOU
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