FBAR (Film Bulk Acoustic Resonator) and preparation method thereof

A resonator and monocrystalline silicon technology, which is applied in the field of FBAR and its preparation based on MEMS micromachining technology, can solve the problem of high process cost, achieve simple device structure, reduce size and cost, and realize the effect of single-chip intelligence

Inactive Publication Date: 2016-11-16
HOHAI UNIV CHANGZHOU
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  • Abstract
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Problems solved by technology

But its disadvantage is that it needs to prepare multi-layer films, the process cost is higher than that of air-gap FBAR, and the sound wave reflection effect of the Bragg reflection layer is not as good as that of air.

Method used

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  • FBAR (Film Bulk Acoustic Resonator) and preparation method thereof
  • FBAR (Film Bulk Acoustic Resonator) and preparation method thereof

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Embodiment 1

[0021] Such as figure 1 As shown, the FBAR resonator provided by the present invention is prepared through the following steps:

[0022] (a) N-type (100) single crystal silicon is used as the substrate, and shallow grooves are etched on the single crystal silicon substrate 1 by an anisotropic reactive ion etching (RIE) process;

[0023] (b) While protecting the sidewall of the shallow groove of the single crystal silicon substrate 1, perform isotropic etching on the single crystal silicon substrate to prepare for the encapsulation process of the next epitaxial single crystal silicon cavity;

[0024] (c) Epitaxial growth of single crystal silicon, forming a sealed cavity 7 inside the single crystal silicon substrate, and the height of cavity 7 is about 5 μm;

[0025] (d) sequentially growing silicon dioxide 2 and silicon nitride 3 on the upper surface of the single crystal silicon substrate 1, and forming contact holes by photolithography and etching;

[0026] (e) Sputtering ...

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Abstract

The invention discloses an FBAR resonator and a preparation method thereof, specifically a FBAR based on MEMS micromachining technology. Due to the mature epitaxial single crystal silicon technology, the silicon microstructure formed by it has good mechanical properties, especially the use of epitaxial single crystal The cavity structure formed by silicon has excellent sealing performance. The resulting FBAR resonant frequency is mainly determined by the thickness of the film body and is affected by the ambient temperature. Its resonant frequency decreases with the increase of temperature and presents obvious monotonicity. This characteristic can be used for temperature, air pressure and other data detection. . Combined with MEMS micromachining technology, the FBAR is small in size, low in cost and short in response time.

Description

technical field [0001] The invention relates to an FBAR resonator and a preparation method thereof, in particular to an FBAR based on MEMS micromachining technology and a preparation method thereof, belonging to the technical field of combining micro-electromechanical systems with new materials. Background technique [0002] Film Bulk Acoustic Resonator (FBAR) is a new type of radio frequency thin film device whose resonator is only a few um thick. FBAR radio frequency devices have the advantages of small size, high operating frequency, small insertion loss, and large power capacity. FBAR oscillators, filters, and duplexers have been widely used in the field of mobile communications. In recent years, research on various sensors based on FBAR has also quietly started. The small size, high sensitivity and high reliability of FBAR sensors have aroused people's extensive research interest. It has been reported that FBAR sensors can be used to detect various parameters such as ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/10
CPCH03H3/02H03H9/02015H03H9/1007H03H2003/021H03H2003/023
Inventor 华迪蔡春华齐本胜谈俊燕
Owner HOHAI UNIV CHANGZHOU
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