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FBAR (Film Bulk Acoustic Resonator) and preparation method thereof

A resonator and monocrystalline silicon technology, which is applied in the field of FBAR and its preparation based on MEMS micromachining technology, can solve the problem of high process cost, achieve simple device structure, reduce size and cost, and realize the effect of single-chip intelligence

Inactive Publication Date: 2016-11-16
HOHAI UNIV CHANGZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But its disadvantage is that it needs to prepare multi-layer films, the process cost is higher than that of air-gap FBAR, and the sound wave reflection effect of the Bragg reflection layer is not as good as that of air.

Method used

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  • FBAR (Film Bulk Acoustic Resonator) and preparation method thereof
  • FBAR (Film Bulk Acoustic Resonator) and preparation method thereof

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Embodiment 1

[0021] Such as figure 1 As shown, the FBAR resonator provided by the present invention is prepared through the following steps:

[0022] (a) N-type (100) single crystal silicon is used as the substrate, and shallow grooves are etched on the single crystal silicon substrate 1 by an anisotropic reactive ion etching (RIE) process;

[0023] (b) While protecting the sidewall of the shallow groove of the single crystal silicon substrate 1, perform isotropic etching on the single crystal silicon substrate to prepare for the encapsulation process of the next epitaxial single crystal silicon cavity;

[0024] (c) Epitaxial growth of single crystal silicon, forming a sealed cavity 7 inside the single crystal silicon substrate, and the height of cavity 7 is about 5 μm;

[0025] (d) sequentially growing silicon dioxide 2 and silicon nitride 3 on the upper surface of the single crystal silicon substrate 1, and forming contact holes by photolithography and etching;

[0026] (e) Sputtering ...

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Abstract

The invention discloses a FBAR (Film Bulk Acoustic Resonator) and a preparation method thereof, and in particular relates to a FBAR based on an MEMS micromachining technology. An epitaxial mono-crystal silicon process is mature; a formed silicon microstructure is good in mechanical property; particularly, the sealing property of a cavity structure formed by using epitaxial mono-crystal silicon is very excellent; therefore, the resonant frequency of the formed FBAR is mainly determined by the thickness of a film bulk, and influenced by environment temperature; the resonant frequency of the FBAR is reduced with the increase of the temperature; furthermore, the obvious monotony is displayed; the property can be used for data detection, such as temperature and pressure; and, in combination with the MEMS micromachining technology, the FBAR is small in size, low in cost and short in response time.

Description

technical field [0001] The invention relates to an FBAR resonator and a preparation method thereof, in particular to an FBAR based on MEMS micromachining technology and a preparation method thereof, belonging to the technical field of combining micro-electromechanical systems with new materials. Background technique [0002] Film Bulk Acoustic Resonator (FBAR) is a new type of radio frequency thin film device whose resonator is only a few um thick. FBAR radio frequency devices have the advantages of small size, high operating frequency, small insertion loss, and large power capacity. FBAR oscillators, filters, and duplexers have been widely used in the field of mobile communications. In recent years, research on various sensors based on FBAR has also quietly started. The small size, high sensitivity and high reliability of FBAR sensors have aroused people's extensive research interest. It has been reported that FBAR sensors can be used to detect various parameters such as ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/10
CPCH03H3/02H03H9/02015H03H9/1007H03H2003/021H03H2003/023
Inventor 华迪蔡春华齐本胜谈俊燕
Owner HOHAI UNIV CHANGZHOU
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