Masking method for deep-etching multi-layer silicon structure by dry method
A silicon structure, multi-layer silicon technology, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of structural sidewall and edge deformation, poor dimensional accuracy, etc., and achieve perfect edge structure and dimensional accuracy. High, process repeatability effect
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[0063] FIG. 7 is a process flow chart of specific steps 1 to 13 of a novel multilayer silicon dry deep etching mask.
[0064] In the figure: 7a to 7m represent steps 1 to 13 respectively.
[0065] Step 1: Select a suitable monocrystalline silicon wafer (4 inches, 400um thick, )
[0066] a) RCA2 wash-DI:H 2 o 2 : HCL=10:2:1; 50°C, 15-20mins.
[0067] b) Wafer container: Teflon cassette
[0068] c) Equipment: fume hood
[0069] Step 2: Apply Az4620P photoresist
[0070] a) 15s, 600rpm; 25s, 3000rpm. (7.3um thickness)
[0071] b) Equipment: Spin coater KW-4A homogenizer
[0072] Step 3: UV lithography to obtain the first layer mask
[0073] a) 1.7mw / cm 2 x 60s=102mJ / cm 2
[0074] b) Equipment: Karl Suss MA4, 400nm
[0075] Step 4: DRIE etching the first layer structure
[0076] a) Process conditions: Table 2, 40 cycles
[0077] b) Equipment: Oxford PlasmaLab 100etcher
[0078] c) Depth of etching structure: 50um
[0079] Step 5: Clean the residual Az photoresist m...
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