81results about How to "Suppress surface roughness" patented technology

After completion of annealing for bonding of the base wafer 1 and bond wafer 2, the bond wafer 2 is thinned to a first thickness suitable for ion implantation, and boron is ion-implanted to thereby form a high-boron-concentration layer 10. A second thinning step based on selective etching is then carried out while using the high-boron-concentration layer 10 as an etch stop layer. This is successful in providing a method of fabricating an SOI wafer which is suppressed both in intra-wafer uniformity of the firm thickness and in inter-wafer uniformity of the film thickness even when a required level for the thickness of the SOI layer is extremely small.

A method for manufacturing a semiconductor device constituting an IGBT is provided that allows to manufacture the device using an inexpensive wafer and with high yields, and achieves low losses. Specifically, after an emitter electrode is formed, a reverse principal surface is polished to a specified thickness. The center line average height Ra of the polished surface is controlled to be not more than 1 .mu.m, and the filtered center line waviness Wca is kept within 10 .mu.m. The polished surface is selectively cleaned with chemicals-dissolved water to remove particles. To the cleaned surface, phosphorus ions are implanted for forming a field-stop layer and boron ions are implanted for forming a collector layer. The wafer is then put into a diffusion furnace and annealed at a temperature from 300.degree. C. to 550.degree. C. to form a field-stop layer and a collector layer. Finally, a collector electrode is formed.

A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.

A method for manufacturing an SOI substrate, comprising: an ion implantation process, which is to form a hydrogen ion implantation layer on the main surface side of a silicon substrate; a surface treatment process, which is to at least one of the insulating substrate and the above-mentioned silicon substrate activation treatment on the main surface of the above-mentioned insulating substrate; a bonding process, which is to bond the main surface of the above-mentioned insulating substrate and the main surface of the above-mentioned silicon substrate; The silicon thin film is mechanically peeled off to form a silicon film on the main surface of the insulating substrate, and the temperature of the silicon substrate in the ion implantation process is maintained at 400° C. or lower. The method of the invention can suppress the surface roughness of the stripped SOI film, and ensure that the entire surface of the SOI substrate has a uniform thickness of the SOI film. Since all are low-temperature processes, the occurrence of transfer defects or slip dislocations can be suppressed, and high-quality SOI wafers can be obtained.

Provided is a magnetic recording medium exhibiting a high C / N (low noise) ratio in high-density magnetic recording. A magnetic recording medium which comprises a nonmagnetic lower layer comprising a nonmagnetic powder and a binder and a magnetic layer comprising a ferromagnetic powder and a binder provided in this order on a flexible nonmagnetic support. The nonmagnetic lower layer comprises flat acicular alpha-iron oxide powder with a major axis length ranging from 0.05 to 0.5 mum and a ratio of the major width to the minor width (major width / minor width) of the minor axis cross-section when sectioned at an angle perpendicular to the major axis is equal to or higher than 1. The granular nonmagnetic particles have a mean particle diameter equal to or less than 0.04 mum.

This roughing insert is provided with an insert body, and a waveform cutting edge which is formed on an intersecting ridge line portion between a rake face and a flank face of the insert body, and which undulates along this intersecting ridge line portion. The waveform cutting edges are formed such that a portion thereof has a smaller wavelength than the remaining portion thereof.

The insulator film of the present invention is suited for use as the insulator material of capacitor elements composing DRAM, is used as the insulator layer of a capacitor element provided with an insulator layer that is interposed between an upper electrode and a lower electrode, and is composed of titanium dioxide to which at least one element from among the lanthanoid elements, Hf and Y is added.

A method of crystallizing an amorphous semiconductor thin film used for a thin film transistor (TFT) is provided. The method includes the steps of: forming first and second crystallization induced metal patterns locally in respective portions of a source region and a drain region of the TFT on an amorphous semiconductor thin film; and crystallizing an amorphous semiconductor via independent two-times heat treatment using the first and second crystallization induced metal patterns. In this case, the independent two-times heat treatment is executed before and after ions of impurities are injected, respectively. In this way, a metal induced lateral crystallization double heat treatment is executed before and after ions of impurities are injected, respectively. As a result, the entire crystallization heat treatment time necessary for crystallizing the amorphous semiconductor thin film can be greatly reduced, and a poly-crystalline TFT having low leakage current can be obtained.

A thermal transfer sheet includes a protective layer and an adhesive layer which are laminated on a sheet base material in that order, the protective layer including a binder resin containing fine particles. The particle diameter of the fine particles is 0.9 to 2.8 times the thickness of the protective layer.

Provided is a film for hydraulic transfer with which a high-resolution printed image, e.g., a photograph, can be transferred to a receiving object to obtain a transferred image having a smooth surface, without deteriorating the image quality. The film for hydraulic transfer is characterized by comprising at least two layers which are an ink-receiving layer and a base layer, the base layer having a surface roughness Ra of 0.40 [mu]m or less and a gloss of 80 or higher.

When a dummy sidewall and source and drain regions are once formed and then the dummy sidewall is removed to extend the source and drain regions, the removal of the dummy sidewall is performed after formation of a protective oxide film on a gate electrode and on the major surfaces of the source and drain regions. This efficiently prevents conventional surface roughness of the upper surface of the gate electrode and the impurity region due to the removal of the dummy sidewall.

A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.

A method of crystallizing an amorphous semiconductor thin film used for a thin film transistor (TFT) is provided. The method includes the steps of: forming first and second crystallization induced metal patterns locally in respective portions of a source region and a drain region of the TFT on an amorphous semiconductor thin film; and crystallizing an amorphous semiconductor via independent two-times heat treatment using the first and second crystallization induced metal patterns. In this case, the independent two-times heat treatment is executed before and after ions of impurities are injected, respectively. In this way, a metal induced lateral crystallization double heat treatment is executed before and after ions of impurities are injected, respectively. As a result, the entire crystallization heat treatment time necessary for crystallizing the amorphous semiconductor thin film can be greatly reduced, and a poly-crystalline TFT having low leakage current can be obtained.

The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.

Provided is a heat treatment apparatus in which a heat treatment apparatus in which the thermal efficiency is high, the maintenance expense is low, the throughput is high, the surface roughness of a sample can be reduced, and the discharge uniformity is excellent, although the heat treatment is performed at 1200 ° C. or more.A heat treatment apparatus includes: parallel planar electrodes; a radio-frequency power supply generating plasma by applying radio-frequency power between the parallel planar electrodes; a temperature measuring section measuring the temperature of a heated sample; and a control unit controlling an output of the radio-frequency power supply, wherein at least one of the parallel planar electrodes has a space where the heated sample is installed, therein, and heats the sample in the electrode by the plasma generated between the parallel planar electrodes.

An object of the present invention is to provide an aqueous coating composition with excellent finished appearance and removability in bell cleaning, and a method for forming a multilayer coating film having excellent smoothness by a 3-coat-1-bake method including successively applying an aqueous first colored coating composition, an aqueous second colored coating composition, and a clear coating composition to a substrate, and heat-curing the resulting three layers of the multilayer coating film all at once. The present invention provides an aqueous coating composition containing an acrylic resin (A), a curing agent (B), and a urethane resin emulsion (C) with a weight average molecular weight of 2,000 to 50,000, the urethane resin emulsion (C) being prepared using constituent components containing a polyisocyanate component and a polyol component as starting materials, wherein the polyisocyanate component contains an alicyclic diisocyanate, and the polyol component contains a polycarbonate diol in an amount of 50 mass %, based on the total amount of the polyol component.