The invention relates to a
silicon carbide crystal and a preparation method thereof, belonging to the field of
crystal material preparation. The preparation method of the
silicon carbide crystal comprises the following steps of: sublimating the raw materials in the
crucible main body, and carrying out
gas phase transmission to the surface of a
seed crystal through a spiral gas flow channel formedby at least one spiral
clapboard component to carry out
crystal growth to prepare the
silicon carbide crystal. The preparation method of the
silicon carbide crystal disclosed by the invention changesthe
gas phase transmission mode for preparing the carbonized
single crystal by the traditional PVT method, converts the traditional vertical upward transmission into spiral upward transmission, realizes effective blocking of
large particle impurities in the
crystal growth process, reduces the defect density in the crystal, and improves the crystal quality. The
energy consumption is reduced. The application can control the
gas phase transmission under vacuum, the
single crystal growth rate under vacuum is fast, the growth temperature is low, and the gas phase can be transmitted upwards in an orderly way, the defects of the grown crystals are few, and the cost is reduced and the efficiency is increased.