Sapphire crystal growth furnace

Abstract

The invention provides a sapphire crystal growth furnace, which comprises an annular inner heater and an outer heater and a plurality of crucibles uniformly arranged between the inner heater and the outer heater, and a cooling device is provided at the bottom of the crucible, so that The power of the inner heater and the outer heater is controllable. A sapphire crystal growth furnace provided by the present invention adopts two kinds of ring-shaped tungsten heaters with different diameters. The tungsten crucible is placed between the two ring-shaped heaters, and the tungsten crucible is evenly and symmetrically distributed. A cooling device is installed at the bottom of each crucible. By controlling The power of the heater and the flow rate and temperature of the cooling medium form a stable temperature field and thermal field, thereby greatly improving the utilization rate of sapphire crystal growth materials and the crystallization rate of large-sized crystals, and reducing production costs.

Description

technical field [0001] The invention relates to the technical field of LED substrate-level sapphire crystal growth, in particular to a sapphire crystal growth furnace. Background technique [0002] LED substrate-level sapphire crystal growth methods mainly include Kyropoulos method, heat exchange method, crucible drop method, etc. Among them, the market share of crystals grown by the Kyropoulos method is more than 85%. The Kyropoulos method uses a single heater. However, as the LED substrate ingot gradually changes from 2inch to 4inch and 6inch and other large sizes, simply by increasing the heating The diameter of the crucible increases the size of the crucible 3 to achieve the purpose of increasing the amount of feed. The sapphire crystal grown by this Kyropoulos method has problems such as low crystal growth yield, low utilization rate of crystal lateral rod removal, and high production energy consumption and cost. The heat exchange method can grow crystals with larger w...

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is: it is very difficult to grow large-diameter sapphire with sapphire crystal growth equipment such as the Kyropoulos method, and the grown crystal material can only be obtained horizontally, and the material utilization rate is extremely low, generally lower than 40%. , in order to overcome the shortcomings of low utilization rate of sapphire crystal growth materials in the prior art, low yield rate of crystal growth, and high production energy consumption and cost, the present invention provides a sapphire crystal growth furnace, which adopts ring heaters arranged inside and outside. Multiple crucibles can be set up to grow multiple sapphire crystals at the same time, which has the advantages of high material utilization rate and low production cost

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