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38results about How to "Reduce the chance of electric leakage" patented technology

Solar cell and manufacturing method thereof

The invention discloses a solar cell and a manufacturing method thereof, relates to the technical field of photovoltaics, and aims to conveniently form an isolation part and reduce the probability of electric leakage of the solar cell. The manufacturing method of the solar cell comprises the following steps of: providing a silicon substrate; forming a tunneling layer on the back surface of the silicon substrate; forming an amorphous silicon layer on the tunneling layer; processing the first part of the amorphous silicon layer to form a doped polycrystalline silicon region and an amorphous silicon region surrounding the doped polycrystalline silicon region; removing the amorphous silicon region and the tunneling layer covered by the amorphous silicon region; and acquiring a passivation contact structure and an isolation part surrounding the passivation contact structure. The solar cell and the manufacturing method thereof provided by the invention are used for solar cell manufacturing.
Owner:TAIZHOU LERRISOLAR TECH CO LTD

Fabricating method of shallow trench isolation structure

A fabricating method of a shallow trench isolation structure of the invention comprises the following steps: forming a pad oxide layer and a hard mask layer in sequence on the surface of a substrate;etching the pad oxide layer and the hard mask layer in sequence to form an opening; depositing oxide layers on the surface of the hard mask layer and in the opening; removing the oxide layer on the surface of the hard mask layer and part of the oxide layer on the surface of the substrate by etching and forming self-aligned spacers at two sides of the opening; taking the self-aligned spacers as masks and etching a shallow trench in the substrate; removing the self-aligned spacers to fully expose the sharp top corner of the shallow trench; generating linear oxides in the shallow trench to fullyround the sharp top corner of the shallow trench in the process; filling insulating media in the shallow trench; and removing the hard mask layer and the pad oxide layer to form the shallow trench isolation structure. By adopting the method of the invention, the rounding top corner can be formed at the top of the shallow trench isolation structure to avoid leakage current from occurring.
Owner:GRACE SEMICON MFG CORP

Volatile and nonvolatile CuxO memristor and regulation and control method thereof

The invention belongs to the technical field of microelectronic devices, and discloses a volatile and nonvolatile CuxO memristor and a regulation and control method thereof. The volatile and nonvolatile CuxO memristor comprises a lower electrode layer (4), a functional layer (3) and an upper electrode layer (1) stacked from bottom to top, the functional layer (3) is a CuxO functional layer, x is larger than 1.8 and smaller than 2, and the functional layer is deposited to enable the functional layer to be in contact with the lower electrode layer; and the upper electrode layer is deposited on the functional layer. The key structure and composition of the memristor are improved, CuxO serves as a functional layer, x is larger than 1.8 and smaller than 2, the chemical proportion is close to Cu2O, the volatile and nonvolatile CuxO memristor can be obtained, the CuxO memristor is based on Cu vacancy modulation, Cu vacancies can be induced through simple limiting current to construct synapsesand conductive wires, and volatility and non-volatility are achieved.
Owner:HUAZHONG UNIV OF SCI & TECH

Technique and structure for making convex

This invention relates to cam creation technique and its structure. It includes a sheath with flat surface, the sheath is covered on a joint mat on the plaque to form a contact surface with one open through the sheath, and one cam on the contact surface and the flat surface is formed. The contact mat can be reduced because of the flat surface of the sheath. The mechanical strength of the sheath on the contact mat is strengthened; the cam will has large efficient area when stitching. Selecting space of different directivity conduction membrane is large, short circuit and electric leakage probability is little, so the stitching good ratio and conducting quality of the cam is improved.
Owner:ELAN MICROELECTRONICS CORPORATION

DRAM device and manufacturing method thereof

The invention provides a DRAM device and a manufacturing method thereof. The manufacturing method of the DRAM device comprises steps that, a substrate is provided; a first grid electrode and a second grid electrode are formed; source electrodes or drain electrodes of a logic transistor and a channel transistor are formed, a dielectric layer and a metal layer are formed, and the dielectric layer and the source electrode or the drain electrode of the channel transistor commonly form a capacitor. The DRAM device comprises the substrate, the channel transistor, the capacitor and the logic transistor, wherein the dielectric layer and the metal layer are sequentially arranged on the source electrode or the drain electrode of the transistor, and the source electrode or the drain electrode, the dielectric layer and the metal layer are used for forming the capacitor. The method and the device are advantaged in that, the dielectric layer and the metal layer are formed on the source electrode or the drain electrode of the channel transistor for forming the capacitor, a problem that a special deep trench for forming a capacitor is formed in a substrate in the prior art can be solved, the manufacturing process is simplified, manufacturing complexity is reduced, and compatibility with the routine manufacturing flow can be better.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Shrinkage turnover type intelligent cable trench support

The invention belongs to the technical field of power equipment, and particularly relates to a contraction turnover type intelligent cable trench support which comprises a stand column, a sliding cylinder, a sliding rod and a connecting piece. The connecting piece is rotated above the ground through the power part, so that a worker is prevented from stretching into a cable trench to install or overhaul a cable, the risk that the worker falls into the cable trench is reduced, the difficulty of installation and overhaul is reduced, installation and overhaul of the cable are facilitated, and the working efficiency is improved. The power part enables the farthest sliding cylinder to abut against the opening of the cable trench, so that the side wall of the cable trench provides supporting force for the sliding cylinder, the stability of the connecting pieces is improved, the distance between the connecting pieces is increased, the operation space is increased, and the cable can be conveniently installed or overhauled. The power part enables the sliding cylinder to contract upwards, so that the distance between the end of the connecting piece and the first rotating shaft is reduced, reliable rotation of the connecting piece is achieved, and reliable work of the cable trench support is achieved.
Owner:周盼

Electric automobile front cabin mounting bracket and electric automobile

The invention discloses an electric automobile front cabin mounting bracket and an electric vehicle, and belongs to the technical field of electric vehicles. A first mounting area and a second mounting area are connected in the first direction, the first mounting area is used for supporting and fixing one, two or three of a power distribution unit, a vehicle-mounted charger, a motor control unit and a battery, and the second mounting area is used for supporting and fixing the rest of the power distribution unit, the vehicle-mounted charger, the motor control unit and the battery; a vacuum boosting main cylinder is arranged above the joint of the first mounting area and the second mounting area in the second direction; the first direction is perpendicular to the second direction; a strengthweakening structure is arranged at the joint of the first mounting area and the second mounting area; the maximum breaking stress capable of being borne by the joint in the second direction is lowerthan a preset breaking stress value, the maximum breaking stress capable of being borne by other positions of the first mounting area and the second mounting area in the second direction is higher than the preset breaking stress value, and the mounting bracket can effectively avoid the vacuum boosting main cylinder and is low in cost.
Owner:上海元城汽车技术有限公司

Semiconductor device and forming method thereof

The invention provides a semiconductor device and a forming method thereof. The method comprises the following steps that a substrate is provided; a dielectric layer is formed on the substrate, wherein a first gate opening which penetrates through the dielectric layer is formed in the dielectric layer; a first interface layer is formed at the bottom of the first gate opening; a first gate dielectric layer is formed on the side walls and the bottom of the first gate opening, wherein the first gate dielectric layer is located on the first interface layer; annealing treatment is carried out on the first interface layer; after annealing treatment is carried out, a first gate electrode layer located on the first gate dielectric layer is formed in the first gate opening; first through holes areformed in the dielectric layer on the two sides of the first gate electrode layer; and a first source drain doping layer is formed in the substrate at the bottoms of the first through holes. Accordingto the method, the performance of the semiconductor device is improved.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1

A photovoltaic cell resistant to high temperature and high humidity environment

The invention relates to a photovoltaic cell for high temperature high moisture environment resistance, belongs to the solar energy photovoltaic generation production field and solves a problem of photoelectric conversion rate decrease caused by the PID effect because of the high temperature high moisture environment. The photovoltaic cell comprises a crystal silicon substrate, wherein a front side and a back side of the crystal silicon substrate are respectively plated with a layer of an antireflection film. The photovoltatic cell is characterized in that a silicon chip edge of the crystal silicon substrate is plated with an edge protection film, the edge protection film is connected with the antireflection films, and the crystal silicon substrate is completely sealed through the edge protection film and the antireflection films so as to realize complete isolation from the external environment. The photovoltatic cell is advantaged in that properties of reasonable structure design, strong reliability, good economics, light weight and practicality are realized, and the problem of photoelectric conversion rate decrease caused by the PID effect because of the high temperature high moisture environment can be effectively solved.
Owner:HUADIAN ELECTRIC POWER SCI INST CO LTD

Water temperature heating device used for culture pond and capable of preventing electric leakage due to water entry

The invention discloses a water temperature heating device used for a culture pond and capable of preventing electric leakage due to water entry. The device comprises a base, a water inlet, a motor and a drainage pipe, wherein an outer box body is arranged above the base; an inner box body is arranged in the outer box body; a mounting box is arranged between the outer box body and the inner box body; the mounting box is mounted on the inner wall of the outer box body; a second rotating shaft is fixedly connected to the interior of a connecting plate; the right side of the second rotating shaftis connected with a third rotating shaft through a transmission belt; and a heat conduction piece is arranged between the mounting box and an electric heating plate. According to the water temperature heating device used for the culture pond and capable of preventing electric leakage due to water entry, the heat conduction piece is arranged between the mounting box and the electric heating plateand is provided with a first cooling fin, a heat conduction rod and a second cooling fin, and the ends, connected with the first cooling fin and the second cooling fin, of the heat conduction rod arecoated with heat conduction silicone grease, so that heat of the electric heating plate can be rapidly transmitted outwards, and the water heating progress is accelerated.
Owner:UNIV FOR SCI & TECH ZHENGZHOU

Etching method for improving power of light-transmitting solar cell module

The invention relates to a scribing method for improving the power of a light-transmitting solar cell assembly, and belongs to the technical field of solar cell applications. Under the condition that the light-transmitting performance of the light-transmitting solar cell module remains unchanged, the purpose of improving the power of the module is achieved by optimizing the light-transmitting scribing method. The width of the optical groove (9) is used to adjust the number of scribed light-transmitting grooves per unit area, and to reduce the number of scribed light-transmitting grooves on the basis of ensuring that the light-transmitting performance remains unchanged, so as to reduce the impact on the film during the scribing process. Leakage caused by damage to the edge of the layer, so that the light transmittance of the component can be kept unchanged, and the power generation can be greatly improved. The present invention analyzes the source of leakage, aims at reducing the probability of leakage, optimizes the way of marking, and does not change much in equipment adjustment, so it has the characteristics of good controllability and flexible change mode, and is the best way to achieve high transparency. An efficient way to rate high power products.
Owner:BAODING TIANWEI GRP CO LTD

Gate structure forming method and gate structure

The invention provides a gate structure forming method and a gate structure. The gate structure forming method comprises the steps of: providing a substrate; forming a first oxidation layer; forming a nitride layer; forming a first gate, so that the first oxidation layer and the nitride layer positioned in a first region form a gate dielectric layer of an input / output MOS device; and forming a second gate on a substrate in a second region. The gate structure comprises a substrate, a first oxidation layer positioned on the substrate in the first region, the nitride layer positioned on the surface of the first oxidation layer, the first gate positioned on the nitride layer in the first region, and the second gate positioned on the substrate in the second region, wherein the nitride layer is formed by carrying out nitrogen treatment on the first oxidation layer. The gate structure forming method and the gate structure have the beneficial effects of reducing probability of electric leakage of the gate dielectric layer, increasing electrical stability of the gate dielectric layer, and reducing thickness of the equivalent oxidation layer under the condition that the physical thickness of the gate dielectric layer of the input / output MOS device is unchanged.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Cable trench cover plate assembly and use method thereof

The invention belongs to the technical field of cable trench accessories, and particularly relates to a cable trench cover plate assembly and a use method thereof. The cable trench cover plate assembly comprises a supporting part, a covering part and a mounting mechanism. By arranging the mounting mechanism, before the covering part is mounted, a cable is mounted on the covering part through the mounting mechanism, so that a worker is prevented from lying on the ground and stretching the body into a cable trench to mount the cable, the risk that the worker falls into the cable trench is reduced, the probability that the worker is injured is reduced, meanwhile, the cable installation difficulty is reduced, and cable installation is facilitated; and the cable is suspended below the covering part, so that the distance between the cable and accumulated water at the bottom of the cable trench is increased, the probability that the cable is soaked by the accumulated water is reduced, the aging of a cable insulator is prevented from being accelerated due to soaking of the cable, the aging speed of the insulator is reduced, the service life of the cable is prolonged, the probability of electric leakage of the cable is reduced, and the safety of pedestrians and vehicles on the road surface is ensured.
Owner:王树合

A kind of flip-chip structure light-emitting diode and its preparation method

The invention discloses a light-emitting diode of an inversion structure and a manufacturing method of the light-emitting diode of the inversion structure, and relates to the field of the photoelectric technology. The light-emitting diode comprises a metal supporting substrate, a P-type semiconductor layer, a quantum well light-emitting layer, an N-type semiconductor layer and a non-doped layer which are sequentially overlapped from bottom to top. The light-emitting diode is structurally characterized in that an N-type ohmic contact metal layer, an insulating film and a reflection metal layer are arranged between the metal supporting substrate and the P-type semiconductor layer, multiple layers of metal are arranged above and around the reflection metal layer and extend to the side to serve as a P-type electrode, the metal supporting substrate is connected with the N-type semiconductor layer through the N-type ohmic contact metal layer to serve as an N-type electrode. Compared with the prior art, the light-emitting diode of the inversion structure and the manufacturing method of the light-emitting diode of the inversion structure can effectively avoid electricity leakage of the lateral wall of a chip of the light-emitting diode, improve the reliability of the chip, reserve the advantages of an original vertical-type LED structure, and give the efficiency of the vertical-type LED structure into full play.
Owner:TONGFANG OPTO ELECTRONICS +1

Field effect transistor and manufacturing method thereof

The embodiment of the invention relates to the field of semiconductor technology, in particular to a field effect transistor and a manufacturing method thereof. The manufacturing method comprises the following steps: boron impurity is injected to an epitaxial layer of a substrate according to preset photoetching size to form a thick boron region; a gate oxide layer is formed in the active region of the upper surface of the epitaxial layer; gate polycrystalline silicon is formed on the upper surface of the gate oxide layer according to the preset photoetching size, and the gate polycrystalline silicon and the thick boron region are not superposed in the direction of being vertical to the substrate; and a boron P well region and a source region are formed in the epitaxial layer; and a dielectric layer and a metal layer are covered, and the field effect transistor is formed. With the adoption of the field effect transistor and a manufacturing method thereof, provided by the embodiment of the invention, through ensuring that the thick boron region and the gate polycrystalline silicon does not coincide, the gate-source leakage is avoided from being generated between the gate and the source through the boron impurity heavily-doped part of the gate oxide layer, so that the gate-source leakage probability of products is reduced.
Owner:PEKING UNIV FOUNDER GRP CO LTD +1

Semiconductor device and method of forming the same

A semiconductor device and a method for forming the same, the method comprising: providing a substrate, the substrate has a first region, the substrate has a first fin and a first dummy gate structure, and the first dummy gate structure includes a first dummy gate layer; Form a dielectric layer covering the sidewall surface of the first dummy gate structure on the substrate; remove the first dummy gate layer, and form a first gate opening in the dielectric layer; form an interface layer at the bottom of the first gate opening; The sidewall and bottom of the opening form a gate dielectric layer on the interface layer; a sacrificial layer is formed on the gate dielectric layer, the top surface of the sacrificial layer is lower than the top surface of the first fin, and the sacrificial layer exposes the top and part of the side of the first fin The gate dielectric layer on the wall surface; the interface layer under the gate dielectric layer exposed by the sacrificial layer is annealed to increase the thickness of the interface layer not covered by the sacrificial layer; the sacrificial layer is finally removed; and then formed on the surface of the gate dielectric layer The gate electrode layer filling the first gate opening. The method improves the performance of semiconductor devices.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1

Solid electrolyte used for horizontal battery production

The invention relates to the field of battery production, and discloses a solid electrolyte used for horizontal battery production. The solid electrolyte comprises the following components in parts bymass: 80 to 91 parts of a polyhenylene high-molecular organic polymer, 9 to 16 parts of a lithium salt and 1.5 to 4 parts of graphite powder. The graphite powder in the scheme has high electrical conductivity, abrasion resistance and lubricating property, the electrical conductivity of the solid electrolyte can be improved, and then the electrical conductivity of each part of the solid electrolyte is relatively balanced, so that the electrical conductivity is promoted. Through the scheme, the space structure is adjusted by selecting appropriate lithium salt, and through the combined action ofthe polyhenylene high-molecular organic polymer and the lithium salt, the electrical conductivity activation energy is reduced, so that an ion channel of a one-dimensional structure is realized, theleakage probability of the solid electrolyte is reduced, and guarantee is provided for the electrical conductivity of the solid electrolyte.
Owner:GUANGZHOU ZHUOYUE POWER NEW ENERGY CO LTD

A ring-shaped multifunctional water purifier

The invention relates to the field of sewage treatment and in particular relates to a water purifier. An annular multifunctional water purifier comprises a water purifier, wherein the water purifier comprises a shell of which the cross section takes the shape of a circular ring; the shell comprises at least six tube sections which are connected in sequence; at least one filtering net is arranged between two adjacent tube sections; at least six tube sections comprise a first tube section in which quartz sand is stored, a second tube section in which activated carbon is stored, a third tube section, a fourth tube section and a fifth tube section in which a soft water resin is stored, and a sixth tube section as a purified water area. Due to the design, the annular multifunctional water purifier is provided, functions of multiple water purification modules are integrated, the purifier is small in size, high in integration degree and convenient to mount and use, and an effect of multiple functions can be achieved; in addition, due to adoption of an annular pipeline, the purifier is easy to modularize and mount; due to adoption of a photocatalyst, the purification efficiency can be improved, photocatalysts which are high in price can be recycled, and thus the cost can be lowered.
Owner:CENT SOUTH UNIV

Semiconductor structure and forming method thereof

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the following steps: providing a substrate and at least two fin parts protruding out of thesubstrate, wherein the substrate exposed out of the fin parts is provided with an isolation layer, the isolation layer covers part of the side walls of the fin parts, the isolation layer is providedwith pseudo grids crossing the fin parts, and the pseudo grids cover part of the tops and part of the side walls of the fin parts; forming a dielectric layer on the isolation layer, wherein the dielectric layer covers the side walls of the pseudo gates; removing a part of the pseudo gates, exposing a part of the tops of a part of the fin parts, and forming an opening penetrating through the thickness of the dielectric layer in the dielectric layer; and forming an insulating layer filling the opening. According to the invention, the semiconductor structure of which the number of the channel regions meets the requirement can be formed on the basis of a plurality of positions where the channel regions can be formed, so that the technological process of forming the semiconductor structure witha specific number of channel regions can be simplified.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1

A kind of field effect transistor and its manufacturing method

The embodiment of the invention relates to the field of semiconductor technology, in particular to a field effect transistor and a manufacturing method thereof. The manufacturing method comprises the following steps: boron impurity is injected to an epitaxial layer of a substrate according to preset photoetching size to form a thick boron region; a gate oxide layer is formed in the active region of the upper surface of the epitaxial layer; gate polycrystalline silicon is formed on the upper surface of the gate oxide layer according to the preset photoetching size, and the gate polycrystalline silicon and the thick boron region are not superposed in the direction of being vertical to the substrate; and a boron P well region and a source region are formed in the epitaxial layer; and a dielectric layer and a metal layer are covered, and the field effect transistor is formed. With the adoption of the field effect transistor and a manufacturing method thereof, provided by the embodiment of the invention, through ensuring that the thick boron region and the gate polycrystalline silicon does not coincide, the gate-source leakage is avoided from being generated between the gate and the source through the boron impurity heavily-doped part of the gate oxide layer, so that the gate-source leakage probability of products is reduced.
Owner:PEKING UNIV FOUNDER GRP CO LTD +1

Semiconductor structure and forming method thereof

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate which comprises a substrate and a fin part protruding out of the substrate, the substrate comprises a first region used for forming a first device and a second region used for forming a second device, and the working voltage of the first device is greater than the working voltage of the second device; forming a first gate oxide layer covering the fin portions of the first region and the second region in a shape-preserving manner, the first gate oxide layer located in the second region being used for forming a gate dielectric layer of a second device; a second gate oxide layer covering the first gate oxide layer in a shape-preserving mode is formed, and the second gate oxide layer and the first gate oxide layer located in the first area are used for forming a gate dielectric layer of the first device; and carrying out gate dielectric layer thinning treatment, wherein the gate dielectric layer thinning treatment comprises the step of removing the second gate oxide layer in the second region. According to the scheme, the consumption of the fin parts in the second region in the process is reduced, and the width uniformity and height uniformity of the fin parts in the first region and the second region are further improved.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1

Embedded DRAM device and formation method thereof

The invention discloses an embedded DRAM device and a formation method thereof. The formation method of the embedded DRAM device comprises steps that, a substrate is provided; a first grid electrode, a second grid electrode, a source electrode and a drain electrode are formed; a logic transistor and a channel transistor are formed, a dielectric layer and a metal layer are sequentially formed on the source electrode or the drain electrode of the channel transistor, and a capacitor is further formed. The embedded DRAM device comprises the substrate, the channel transistor, the capacitor and the logic transistor, wherein the dielectric layer and the metal layer are sequentially arranged on the source electrode or the drain electrode of the channel transistor, and the source electrode or the drain electrode, the dielectric layer and the metal layer form the capacitor. The method and the device are advantaged in that, the dielectric layer and the metal layer are formed on the source electrode or the drain electrode of the channel transistor for forming the capacitor, a problem that a special deep trench for forming a capacitor is formed in a substrate in the prior art can be solved, the manufacturing process is simplified, manufacturing complexity is reduced, and compatibility with the routine manufacturing flow can be better.
Owner:SEMICON MFG INT (SHANGHAI) CORP
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