38results about How to "Reduce the chance of electric leakage" patented technology

The invention provides a high voltage semiconductor device. The high-voltage semiconductor device comprises a substrate; a source electrode zone and a drain electrode are arranged in the substrate andare isolated by an isolation structure; the first metal layer is arranged on the substrate and comprises a first metal layer main body which is electrically connected to the source area and the drainarea and a plurality of first metal stop blocks which are arranged right above the isolation structure; the second metal layer is stacked on the first metal layer; the second metal layer main body iselectrically connected to the source zone or drain zone, and the plurality of second metal stop blocks are arranged right above the isolation structure, wherein a stacking part is arranged between each first metal stop block and the corresponding second metal block; a via hole is arranged between the first metal layer and the second metal layer; the via hole is arranged in a stacking part of thefirst metal stop block and the second metal stop block. The high voltage semiconductor device can prevent stray electrons from permeating to the isolation structure and can reduce rates of break through voltage drop and electricity leakage.

The invention provides an arrangement structure of a power battery pack of a distributed four-wheel hub motor driven electric vehicle. Space. According to the layout requirements of ergonomics, the body structure, the installation structure of the seat, and the layout requirements of the internal cells and electrical components of the power battery, the battery pack is designed to be laid flat between the upper floor and the lower floor, and the lower surface is determined. Ensure that the minimum ground clearance and longitudinal passing angle of the vehicle meet the relevant requirements of the vehicle design. Through reasonable arrangement and simple fixing method, the present invention ensures that the power has the largest volume, ensures the utilization rate of the internal space of the power battery, and is beneficial to the reasonable distribution of the front and rear axle loads of the vehicle. In addition, the power battery pack and the vehicle body The high strength of the connection structure improves the stability of the power battery pack and is conducive to the stable operation of the car.

The invention discloses a light-emitting diode of an inversion structure and a manufacturing method of the light-emitting diode of the inversion structure, and relates to the field of the photoelectric technology. The light-emitting diode comprises a metal supporting substrate, a P-type semiconductor layer, a quantum well light-emitting layer, an N-type semiconductor layer and a non-doped layer which are sequentially overlapped from bottom to top. The light-emitting diode is structurally characterized in that an N-type ohmic contact metal layer, an insulating film and a reflection metal layer are arranged between the metal supporting substrate and the P-type semiconductor layer, multiple layers of metal are arranged above and around the reflection metal layer and extend to the side to serve as a P-type electrode, the metal supporting substrate is connected with the N-type semiconductor layer through the N-type ohmic contact metal layer to serve as an N-type electrode. Compared with the prior art, the light-emitting diode of the inversion structure and the manufacturing method of the light-emitting diode of the inversion structure can effectively avoid electricity leakage of the lateral wall of a chip of the light-emitting diode, improve the reliability of the chip, reserve the advantages of an original vertical-type LED structure, and give the efficiency of the vertical-type LED structure into full play.

A semiconductor structure and its forming method, the forming method comprising: providing a substrate and fins protruding from the substrate, the number of the fins is at least two, and the fins are exposed on the substrate An isolation layer is provided, the isolation layer covers part of the sidewall of the fin, the isolation layer has a dummy gate across the fin, and the dummy gate covers part of the top and part of the sidewall of the fin; A dielectric layer is formed on the isolation layer, and the dielectric layer covers the sidewalls of the dummy gate; part of the dummy gate is removed to expose part of the tops of some number of fins, and a penetrating through the dielectric layer is formed in the dielectric layer. an opening in the layer thickness; forming an insulating layer that fills the opening. The present invention can form a semiconductor structure with a required number of channel regions on the basis of multiple positions where channel regions can be formed, thereby simplifying the process of forming a semiconductor structure with a specific number of channel regions.

A trench step channel (Trench Step Channel, TSC for short) unit transistor and its manufacturing method are used to increase the channel length of the transistor, and the transistor includes a selectively grown step silicon layer. Wherein the step silicon crystal layer is located above the active element area of ​​the transistor.

A semiconductor device and a method for forming the same, the method comprising: providing a substrate, the substrate has a first region, the substrate has a first fin and a first dummy gate structure, and the first dummy gate structure includes a first dummy gate layer; Form a dielectric layer covering the sidewall surface of the first dummy gate structure on the substrate; remove the first dummy gate layer, and form a first gate opening in the dielectric layer; form an interface layer at the bottom of the first gate opening; The sidewall and bottom of the opening form a gate dielectric layer on the interface layer; a sacrificial layer is formed on the gate dielectric layer, the top surface of the sacrificial layer is lower than the top surface of the first fin, and the sacrificial layer exposes the top and part of the side of the first fin The gate dielectric layer on the wall surface; the interface layer under the gate dielectric layer exposed by the sacrificial layer is annealed to increase the thickness of the interface layer not covered by the sacrificial layer; the sacrificial layer is finally removed; and then formed on the surface of the gate dielectric layer The gate electrode layer filling the first gate opening. The method improves the performance of semiconductor devices.

The invention relates to the field of sewage treatment and in particular relates to a water purifier. An annular multifunctional water purifier comprises a water purifier, wherein the water purifier comprises a shell of which the cross section takes the shape of a circular ring; the shell comprises at least six tube sections which are connected in sequence; at least one filtering net is arranged between two adjacent tube sections; at least six tube sections comprise a first tube section in which quartz sand is stored, a second tube section in which activated carbon is stored, a third tube section, a fourth tube section and a fifth tube section in which a soft water resin is stored, and a sixth tube section as a purified water area. Due to the design, the annular multifunctional water purifier is provided, functions of multiple water purification modules are integrated, the purifier is small in size, high in integration degree and convenient to mount and use, and an effect of multiple functions can be achieved; in addition, due to adoption of an annular pipeline, the purifier is easy to modularize and mount; due to adoption of a photocatalyst, the purification efficiency can be improved, photocatalysts which are high in price can be recycled, and thus the cost can be lowered.

The embodiment of the invention relates to the field of semiconductor technology, in particular to a field effect transistor and a manufacturing method thereof. The manufacturing method comprises the following steps: boron impurity is injected to an epitaxial layer of a substrate according to preset photoetching size to form a thick boron region; a gate oxide layer is formed in the active region of the upper surface of the epitaxial layer; gate polycrystalline silicon is formed on the upper surface of the gate oxide layer according to the preset photoetching size, and the gate polycrystalline silicon and the thick boron region are not superposed in the direction of being vertical to the substrate; and a boron P well region and a source region are formed in the epitaxial layer; and a dielectric layer and a metal layer are covered, and the field effect transistor is formed. With the adoption of the field effect transistor and a manufacturing method thereof, provided by the embodiment of the invention, through ensuring that the thick boron region and the gate polycrystalline silicon does not coincide, the gate-source leakage is avoided from being generated between the gate and the source through the boron impurity heavily-doped part of the gate oxide layer, so that the gate-source leakage probability of products is reduced.

The invention discloses an anti-leakage control device, an air conditioner and an anti-leakage control method thereof. The device comprises: a control switch, arranged between a filter circuit and a grounding terminal, for switching on or off the filter circuit under the control of a control unit; The path between the circuit and the ground terminal is used to disconnect the path between the filter circuit and the ground terminal to prevent the filter circuit from leaking to the ground terminal; the control unit is used to determine the operating parameters of the air conditioner when the air conditioner is powered on, and The on or off of the control switch is controlled according to the operating parameters of the air conditioner; the operating parameters of the air conditioner include: working state and / or operating mode. The solution of the present invention can solve the problem of high safety risk in use in the way of improving the anti-electromagnetic interference ability of the inverter air conditioner by connecting Y capacitors in series between the neutral line and the ground, and achieve the effect of reducing the safety risk in use.

The invention discloses an energy-saving massage seat, which includes a bottom plate, and is characterized in that: the left side of the upper surface of the bottom plate is fixedly connected with a main bracket; the inner side of the top of the main bracket is fixedly connected with a headrest bracket, and the headrest bracket The inner side is slidingly connected with a headrest, and the headrest and the headrest support are elastically connected by springs, the upper part of the main support right side is fixedly connected with a first ratchet support, and the inboard of the first ratchet support is connected with a ratchet through the rotation of the ratchet shaft. The energy-saving massage seat, by setting a single servo motor and lowering the position of the servo motor, reduces the probability of leakage and reduces the damage caused by radiation to the human body. When sitting on the seat, it can make full use of its own weight to massage the waist, thereby reducing the number of motors used, solving the problem of high radiation and reducing the energy consumption of the seat, making the whole device more environmentally friendly.