Volatile and nonvolatile CuxO memristor and regulation and control method thereof
A non-volatile, memristor technology, applied in electrical components and other directions, can solve the problems of complex process, little mention of memristor volatility, unfavorable cost control, etc., to achieve process simplification, reduce edge leakage, Improves consistency and repeatability
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Embodiment 1
[0038] Embodiment 1: A kind of Cu with both volatile and non-volatile properties x O memristor preparation method
[0039] Cu provided in this example x O memristor, TiN / Cu with small hole structure x O / Pt memristor, the structure of which is as figure 1 and figure 2 Shown; where the bottom electrode is Pt, the thickness is 100nm; functional layer Cu x The thickness of O is 60nm; the insulating layer on the bottom electrode is SiO 2 , with a total thickness of 100nm; the upper electrode is TiN, with a thickness of 100nm.
[0040] Describe Cu in detail below x The preparation method of O memristor:
[0041] (1) Bottom electrode preparation
[0042] Substrate cleaning: Si / SiO 2 Soak the substrate in analytical pure acetone for the experiment, put it into an ultrasonic cleaning machine with a power of 60w, and sonicate for 10 minutes; immerse the sample cleaned by acetone in pure ethanol for the experiment, and ultrasonicate for 10 minutes; the sample cleaned by ethanol...
Embodiment 2
[0056] Example 2: A TiN / Cu with both volatile and non-volatile properties x Control method of O / Pt memristor
[0057] In the regulation and testing stage, the test adopts DC test. In general, it can be carried out as follows:
[0058] (1) Forming the selected memristor unit, the first electrical operation causes Cu vacancies to migrate and redistribute, forming an unstable conductive channel; wherein the limiting current in the forming process is selected as 50uA, and the voltage scanning range is 0V-5V;
[0059] (2) Limiting the current setting of the memristor unit for testing.
[0060] The following is the Cu prepared in Example 1 x A method for regulating and testing the memristor specifically comprises the following steps:
[0061] (1) Select a memristor unit on the sample, stick two probes on the upper electrode and the reserved lower electrode area respectively, apply a positive voltage to the probe connected to the upper electrode, and ground the probe connected to...
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