High voltage semiconductor device

Abstract

The invention provides a high voltage semiconductor device. The high-voltage semiconductor device comprises a substrate; a source electrode zone and a drain electrode are arranged in the substrate andare isolated by an isolation structure; the first metal layer is arranged on the substrate and comprises a first metal layer main body which is electrically connected to the source area and the drainarea and a plurality of first metal stop blocks which are arranged right above the isolation structure; the second metal layer is stacked on the first metal layer; the second metal layer main body iselectrically connected to the source zone or drain zone, and the plurality of second metal stop blocks are arranged right above the isolation structure, wherein a stacking part is arranged between each first metal stop block and the corresponding second metal block; a via hole is arranged between the first metal layer and the second metal layer; the via hole is arranged in a stacking part of thefirst metal stop block and the second metal stop block. The high voltage semiconductor device can prevent stray electrons from permeating to the isolation structure and can reduce rates of break through voltage drop and electricity leakage.

Description

technical field [0001] The present invention relates to semiconductor devices, and in particular to high voltage semiconductor devices. Background technique [0002] High-voltage semiconductor device technology is suitable for high-voltage and high-power integrated circuits. Conventional high-voltage semiconductor devices, such as vertically diffused metal oxide semiconductor (VDMOS) transistors and horizontally diffused metal oxide (LDMOS) transistors, are mainly used in device applications above 18V. The advantage of high-voltage semiconductor device technology is that it is cost-effective and easily compatible with other processes. It has been widely used in the fields of display driver IC components, power supplies, power management, communications, automotive electronics, or industrial control. [0003] In traditional high-voltage semiconductor devices, the isolation structure (such as a field oxide layer) is directly exposed under the protective layer or molding compo...

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Problems solved by technology

[0003] In traditional high-voltage semiconductor devices, the isolation structure (such as a field oxide layer) is directly exposed under the protective layer or molding compound, and cracks may be generated during the formation of the above materials, allowing mobile charges to penetrate into the field On the oxide layer, the breakdown voltage decreases and the probability of leakage increases

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