Gate structure forming method and gate structure

Abstract

The invention provides a gate structure forming method and a gate structure. The gate structure forming method comprises the steps of: providing a substrate; forming a first oxidation layer; forming a nitride layer; forming a first gate, so that the first oxidation layer and the nitride layer positioned in a first region form a gate dielectric layer of an input / output MOS device; and forming a second gate on a substrate in a second region. The gate structure comprises a substrate, a first oxidation layer positioned on the substrate in the first region, the nitride layer positioned on the surface of the first oxidation layer, the first gate positioned on the nitride layer in the first region, and the second gate positioned on the substrate in the second region, wherein the nitride layer is formed by carrying out nitrogen treatment on the first oxidation layer. The gate structure forming method and the gate structure have the beneficial effects of reducing probability of electric leakage of the gate dielectric layer, increasing electrical stability of the gate dielectric layer, and reducing thickness of the equivalent oxidation layer under the condition that the physical thickness of the gate dielectric layer of the input / output MOS device is unchanged.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a gate structure and the gate structure. Background technique [0002] In today's market, the integration density of integrated circuits is becoming higher and higher, and the size of semiconductor devices needs to become smaller and smaller. Correspondingly, the equivalent oxide thickness (Effective Oxide Thickness, EOT) of the gate dielectric layer as a part of semiconductor devices is also increasing. need to be reduced proportionally. However, when the thickness of the gate dielectric layer is reduced to a certain extent, the leakage probability of the gate dielectric layer will obviously increase, and the electrical reliability of the gate dielectric layer will also decrease. [0003] Taking a complementary metal-oxide-semiconductor device (MOS) as an example, when the gate dielectric layer in the MOS device is thinned to a certain extent, the...

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Problems solved by technology

However, when the thickness of the gate dielectric layer is reduced to a certain extent, the leakage probability of the gate dielectric layer will increase significantly, and the electrical reliability of the gate dielectric layer will also decrease.

[0003] Taking complementary metal-oxide-semiconductor devices (MOS) as an example, when the gate dielectric layer in the MOS device is thinned to a certain extent, the electrical reliability of the gate structure will decrease, which will affect the reliability of the MOS device.

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