Embedded DRAM device and formation method thereof

Abstract

The invention discloses an embedded DRAM device and a formation method thereof. The formation method of the embedded DRAM device comprises steps that, a substrate is provided; a first grid electrode, a second grid electrode, a source electrode and a drain electrode are formed; a logic transistor and a channel transistor are formed, a dielectric layer and a metal layer are sequentially formed on the source electrode or the drain electrode of the channel transistor, and a capacitor is further formed. The embedded DRAM device comprises the substrate, the channel transistor, the capacitor and the logic transistor, wherein the dielectric layer and the metal layer are sequentially arranged on the source electrode or the drain electrode of the channel transistor, and the source electrode or the drain electrode, the dielectric layer and the metal layer form the capacitor. The method and the device are advantaged in that, the dielectric layer and the metal layer are formed on the source electrode or the drain electrode of the channel transistor for forming the capacitor, a problem that a special deep trench for forming a capacitor is formed in a substrate in the prior art can be solved, the manufacturing process is simplified, manufacturing complexity is reduced, and compatibility with the routine manufacturing flow can be better.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an embedded DRAM device and a forming method thereof. Background technique [0002] With the continuous development of the semiconductor industry, semiconductor devices with storage functions occupy an increasingly important position. Taking Dynamic Random Access Memory (DRAM) as an example, embedded DRAM (eDRAM) in DRAM classification has been gradually applied to the market because of its higher operating speed and integration. [0003] However, since the production process of eDRAM devices is relatively complicated and is poorly compatible with the production process of existing conventional semiconductor devices, it requires a lot of manpower and material resources to manufacture such devices. On the other hand, even if the performance of the eDRAM device is improved compared with the traditional storage device, with the development of market demand, the performanc...

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Problems solved by technology

[0003] However, due to the complicated production process of eDRAM devices and poor compatibility with the production process of existing conventional semiconductor devices, it takes a lot of manpower and material resources to manufacture such devices

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