A canal step channel unit transistor and its manufacture method

Abstract

A trench step channel (Trench Step Channel, TSC for short) unit transistor and its manufacturing method are used to increase the channel length of the transistor, and the transistor includes a selectively grown step silicon layer. Wherein the step silicon crystal layer is located above the active element area of ​​the transistor.

Description

technical field [0001] The present invention relates to a trench step channel (Trench Step Channel; TSC for short) unit transistor and a manufacturing method thereof, in particular to a trench step channel (TSC) unit transistor with a selectively grown step silicon layer and its method of manufacture. Background technique [0002] The industrial revolution in the 19th century mainly saved manpower with machines, and in the 20th century, computers further solved the even greater demand for manpower. In 1947, W. Schockley and others invented the transistor to replace the vacuum tube amplifier, which opened the development of the microelectronics industry. At the end of the 20th century, the development of miniaturization of electronic technology greatly reduced the size of electronic equipment. With the development of semiconductor As the integration level of circuits increases, the size of semiconductor components must also be reduced accordingly. Today, electronic material...

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Problems solved by technology

[0003] Among them, in view of the short channel effect (Short Channel Effect) caused by the reduction of the current channel length due to the reduction of the size of the semiconductor element, some people use the Recess Channel Array Transistor or the Step Transistor Array This method increases the length of the current channel, but when manufacturing a device structure with deep trench capacitance, the disadvantage of this method is that it will cause the current to punch through due to the diffusion of the Buried Strap electrode. resulting in leakage

[0004] Lim, S.-H. and others have done related research on the growth rate and temperature of isotropic and anisotropic selective epitaxial growth methods (see Isotropic / anisotropic selective epitaxial growth of Si and SiGe on LOCOS patterned Si(100 )substrate by cold walltype UHV-CVD, from Microprocesses and Nanotechnology conference, 2002.Digest of Papers.Microprocesses and Nanotechnology 2002.2002International 6-8 Nov.2002 Page(s):74-75), found that when the operating temperature is 600℃ At 650°C, anisotropic selective epitaxial growth is quite close to unidirectional epitaxial growth; at 650°C, complete selective unidirectional epitaxial growth can be achieved, but no one has used this method in the channel process of transistors

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