Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the following steps: providing a substrate and at least two fin parts protruding out of thesubstrate, wherein the substrate exposed out of the fin parts is provided with an isolation layer, the isolation layer covers part of the side walls of the fin parts, the isolation layer is providedwith pseudo grids crossing the fin parts, and the pseudo grids cover part of the tops and part of the side walls of the fin parts; forming a dielectric layer on the isolation layer, wherein the dielectric layer covers the side walls of the pseudo gates; removing a part of the pseudo gates, exposing a part of the tops of a part of the fin parts, and forming an opening penetrating through the thickness of the dielectric layer in the dielectric layer; and forming an insulating layer filling the opening. According to the invention, the semiconductor structure of which the number of the channel regions meets the requirement can be formed on the basis of a plurality of positions where the channel regions can be formed, so that the technological process of forming the semiconductor structure witha specific number of channel regions can be simplified.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In semiconductor manufacturing, as the feature size of integrated circuits continues to decrease, the channel length of MOSFETs has also been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, resulting in poor control ability of the gate to the channel, and short-channel effects (SCE: short-channel effects) more likely to happen. [0003] The Fin Field Effect Transistor (FinFET) has outstanding performance in suppressing the short channel effect. The gate of the FinFET can control the fin at least from both sides. Therefore, compared with the planar MOSFET, the gate of the FinFET has an The control ability is stronger, and the short channel effect can be well suppr...

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Problems solved by technology

[0004] However, the process methods for forming semiconductor structures in the prior art still need to be improved

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