The invention proposes a
transistor outline (TO)-CAN packaged
semiconductor laser and a fabrication method thereof. The TO-CAN packaged
semiconductor laser comprises a TO tube base, a
semiconductor laser chip, a backlight
detector chip, a gold bonding wire, pins and a
heat sink block, wherein the
heat sink block is arranged on the upper surface of the TO tube base, the pins are fixed on the TO tube base in an insulation way, the upper end of at least one pin protrudes out of the upper surface of the TO tube base, the semiconductor laser
chip is fixed on the surface of the
heat sink block, the upper part of the pin protruding out of the upper surface of the TO tube base is connected with a support table, and the backlight
detector chip is arranged on the support table and below the semiconductor laser chip. In the TO-CAN packaged semiconductor laser, the backlight
detector chip is arranged on the support table integrated and connected with the pins, thus, an independent
cushion block is omitted, and the material cost of the
cushion block is saved; and moreover, the gold
wire bonding process between the backlight detector chip and the
cushion block in one time is omitted, the gold
wire bonding process is simplified, the gold
wire bonding cost is saved, and the stability of a laser product is improved.