41results about How to "Lower package thermal resistance" patented technology

The invention relates to an ESD (electronic static discharge) protected LED (light-emitting diode) packaging structure as well as a packaging method thereof, and belong to the technical field of semiconductor packaging. The ESD protected LED packaging structure comprises an LED chip (200) and an ESD protective chip (300), wherein the LED chip (200) is reversely installed in a cavity (111) of a silicon base body (110); the ESD protective chip (300) is embedded into a blind hole (113) in the other surface of the silicon base body (110); the LED chip (200) and the ESD protective chip (300) are electrically communicated and are electrically communicated with the external world by multi-layer metal layers in silicon through holes (112) below the cavity (111) and in the blind hole (113) as well as metal leads (900) connected with the multi-layer metal layers. The LED chip and the ESD electrostatic protective chip are integrated into a package body by the packaging structure realized by the invention; the ESD anti-electrostatic capability of the LED packaging structure is intensified; the packaging thermal resistance is reduced greatly by the addition of a heat radiation channel; the using performance of the LED chip is improved; the service life of the LED chip is prolonged.

The invention relates to the technical field of LED electronic products, in particular to a high-strength anti-blue-ray LED packaging material. The high-strength anti-blue-ray LED packaging material comprises the components in parts by weight: 60-70 parts of polysulfone modified epoxy resin, 23-25 parts of bisphenol formaldehyde / resorcin copolymerization epoxy resin, 5-8 parts of polydimethylsiloxane, 0.1-1 parts of modified or unmodified melanin, 0.1-0.3 parts of hydroquinone, 5-8 parts of styrene modified alkyd resin and 3-10 parts of modified sea-foam stone powder. The prepared high-strength anti-blue-ray LED packaging material has the advantages that blue ray blocking performance is very high, and blue rays can be effectively filtered, so that the transmitting light is much softer and human eyes can be protected against being injured to a certain extent. Meanwhile, the high-strength anti-blue-ray LED packaging material has the advantages of high light transmission performance and smaller influence on color temperature; and moreover, the packaging thermal resistance value can be reduced as much as possible. The prepared high-strength anti-blue-ray LED packaging material provided by the invention also realizes a high mechanical property.

The invention provides a construction method for a high power LED multilayer gradient material heat dispersion channel, which includes steps: 1) GaN-base LED chip preparation: etching a GaN-base LED epitaxial wafer by dry process to form a L shape and expose N-GaN layer surface; vaporizing a indium tin oxide current expansion layer on surface of the P-GaN, vaporizing P, N electrodes and plating pure gold on the P, N electrode; 2) Cu fast heat diffusion board preparation: preparing a L-shaped Cu board, sputtering a layer of Ti or Cr by magnetic control to be used as a adhesive layer; sputteringa layer of AlN on the Ti layer by magnetic control to be used as a insulated layer; vaporizing a layer of thin gold and plating a layer of thick pure gold; 3) pure gold bonding by thermocompression bonding: upside-down mounting the LED chip on the Cu fast heat diffusion board. By employing Au-Au-AlN-Ti multilayer material with high thermal conductance and gradient changed thermal coefficient of expansion to construct the heat dispersion channel between the LED and the Cu fast heat diffusion board, heat diffusion problem of high power LED is resolved, heat diffusion capability and stability ofdevice is increased.

The invention relates to a single-substrate multi-chipset high-power LED (Light-Emitting Diode) encapsulation one-step bonding method, belonging to the technical field of multi-chipset high-power LED encapsulation. The invention solves the problem that the whole bonding time is too long as multiple chipsets are sequentially spliced in the traditional multi-chipset high-power LED encapsulation technology. The method comprises the following steps of: cleaning a substrate, a chip carrying platform, a multi-chip suction nozzle and a supporting platform; placing the substrate on the supporting platform; determining positions of chips to be bonded on the front of the substrate, and placing multiple chips to be bonded on the chip carrying platform corresponding to the positions of the chips to be bonded; uniformly coating soldering paste on the positions of the chips to be bonded by adopting screen printing, and then simultaneously picking up multiple chips to be bonded with the multi-chip suction nozzle; heating the back of the substrate, enabling multiple chips to align with the positions to be bonded and then attached to the soldering paste, continuously heating for 5-10s, naturally cooling to room temperature, and removing the multi-chip suction nozzle, thus the bonding process is completed. The invention provides an encapsulation bonding method.

The invention discloses a packaging structure and a packaging technology capable of synchronously completing welding, bonding and sealing. The packaging structure comprises a ceramic through cavity, two leading-out terminal cover plate, a seal ring and a chip, wherein the ceramic through cavity is brazed to the first leading-out terminal cover plate through welding flux, the seal connecting ting is brazed to the upper surface of the ceramic through cavity, one end of the chip is welded to the first leading-out terminal cover plate of the inner cavity of the ceramic through cavity while the other end of the chip is welded to the second leading-out terminal cover plate through welding flux, and meanwhile the second leading-out terminal cover plate is welded to the seal ring through welding flux. The first leading-out terminal cover plate, the ceramic through cavity, the seal ring, the welding flux and the second leading-out terminal cover plate jointly form the airtight packaging structure. The packaging technology comprises that the chip is welded and bonded to the first and second leading-out terminal cover plates, and the second leading-out terminal cover plate and the seal ring are fused and welded together through the welding flux at a time, wherein welding, bonding and sealing processes are synchronously completed.

The invention relates to a light emitting diode (LED) packaging structure. The LED packaging structure comprises an insulating substrate, an n-shaped layer, an active layer, a p-shaped layer; an isolating layer, a p electrode, an n electrode, a first back electrode and a second back electrode, wherein through holes are formed on both sides of the insulating substrate and are filled with conductive metal; the n-shaped layer is arranged on the insulating substrate, and a hole is formed in the n-shaped layer and is filled with conductive metal; the active layer is arranged on the n-shaped layer;the p-shaped layer is arranged on the active layer; the isolating layer is positioned on one side of the n-shaped layer, the active layer and the p-shaped layer and is used for covering a part of upper surface of the p-shaped layer; the p electrode is used for covering the isolating layer and covering a part of upper surface of the p-shaped layer; the n electrode is arranged on one side of the upper side of the n-shaped layer and is connected with the conductive metal in the through holes in the insulating substrate; the first back electrode is arranged on one side of the rear side of the insulating substrate and is connected with the p electrode through the conductive metal in the through holes in the insulating substrate; and the second back electrode is arranged on the other side of the rear side of the insulating substrate and is connected with the n electrode through the conductive metal in the through holes in the insulating substrate. A substrate of a device is formed by all the parts, and an optical element is packaged on the substrate to complete the production of the device.

The invention relates to the technology of LED packaging, and provides an LED packaging structure comprising light-transmitting supports, fluorescent glue and inverted LED chips. Each light-transmitting support is provided with a groove. The fluorescent glue at least covers the bottom surfaces of the grooves of the light-transmitting supports. The inverted LED chips are fixed on the fluorescent glue in a way that the light-emitting surfaces of the inverted LED chips face the direction of the grooves, and the electrode surfaces of the inverted LED chips are back to the direction of the grooves. The invention also provides a manufacturing method of the LED packaging structure. The manufacturing method comprises the steps that S1, the supports are manufactured: light-transmitting material is selected to manufacture the supports, and one groove is formed on each support; S2, the fluorescent glue is adhered; the fluorescent glue is adhered in the grooves of the supports; S3, drying is performed: the fluorescent glue in the grooves of the supports is solidified by drying; and S4, die-bonding is performed: the inverted LED chips are selected and are fixed on the fluorescent glue in the way that the light-emitting surfaces of inverted LED chips face the direction of the grooves, and the electrode surfaces of the inverted LED chips are back to the direction of the grooves. The LED packaging structure is used for packaging the LED chips so that packaging thermal resistance is substantially reduced.

The invention relates to a packaging structure and manufacturing method of a high-current power semiconductor device, which includes a heat sink, a semiconductor chip, a plastic package body and a chip mounting base island, the chip mounting base island is connected to the heat sink, and the third electrode on the back of the semiconductor chip is welded to the mounting plate. On the first surface of the substrate island, it is characterized in that the first electrode on the front side of the semiconductor chip is welded to one end of the first conductive metal sheet, the second electrode is welded to one end of the second conductive metal sheet, and the substrate island is packaged in the plastic package. The first surface, the semiconductor chip, the welding ends of the first and second conductive metal sheets, the heat sink, the second surface of the base island, and the other ends of the first and second conductive metal sheets are all exposed outside the plastic package as pins The present invention uses conductive metal sheets as pins to be directly welded with the electrodes of the semiconductor chip, which not only reduces the device packaging resistance, increases the device overcurrent capability, but also enhances the heat dissipation capability of the device, reduces the package thermal resistance, and improves the reliability of the device package.