Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-power LED chip making method

An LED chip and manufacturing method technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high packaging thermal resistance, low light extraction efficiency, and high cost, and achieve the goal of reducing packaging thermal resistance, improving light extraction efficiency, and reducing costs. Effect

Inactive Publication Date: 2014-04-09
深圳市三创客科技有限公司
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for manufacturing a high-power LED chip to solve the problems of high packaging thermal resistance, low light extraction efficiency and high cost in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A method for manufacturing a high-power LED chip, characterized in that: comprising the following steps:

[0020] Step 1: LED chip inspection Microscopic inspection: whether there is mechanical damage and pitting on the surface of the material, whether the chip size and electrode size meet the process requirements, and whether the electrode pattern is complete;

[0021] Step 2: Expand the film bonded to the chip with a chip expander, so that the distance between the LED chips is stretched to about 0.6mm;

[0022] Step 3: LED dispensing, apply silver glue or insulating glue on the corresponding position of the LED bracket;

[0023] Step 4: LED glue preparation, glue preparation is to use the glue preparation machine to first apply silver glue on the back electrode of the LED, and install the LED with silver glue on the back of the LED bracket, the efficiency of glue preparation is much higher than dispensing;

[0024] Step 5: LED manual stabbing. Place the expanded LED ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A high-power LED chip making method is provided in order to solve the problems of high packaging thermal resistance, low light extraction efficiency and high cost in the prior art. The method comprises the following steps: step 1, LED chip inspection microscopy: whether the material surface has mechanical damage, pocks or pockmarks, whether the chip size and the electrode size meet the process requirement and whether the electrode pattern is complete are detected; step 2, a film for bonding chips is expanded with the use of a film expanding machine to enable the spacing of the LED chips to be stretched to 0.6mm; step 3, LED dispensing: silver glue or insulating glue is dispensed in corresponding position points of an LED bracket; and step 4: LED back-gluing: silver glue is pasted on a back electrode of an LED by using a back gluing machine and then the LED with silver glue on the back is installed on the LED bracket, wherein the efficiency of back gluing is far higher than that of dispensing. By the adoption of the high-power LED chip making method of the invention, the effects of packaging thermal resistance decreasing, light extraction efficiency improving and cost reducing are achieved.

Description

technical field [0001] The invention relates to a method for manufacturing a high-power LED chip. Background technique [0002] Due to the complex structure and process of high-power LED packaging, which directly affects the performance and life of LEDs, the selection of LED packaging methods, materials, structures and processes is mainly determined by factors such as chip structure, photoelectric / mechanical characteristics, specific applications and costs. After more than 40 years of development, LED packaging has successively experienced development stages such as bracket type (Lamp LED), patch type (SMD LED), and power LED (Power LED). With the increase of chip power, especially the demand for the development of solid-state lighting technology, new and higher requirements are put forward for the optical, thermal, electrical and mechanical structures of LED packaging. However, the prior art has the problems of high package thermal resistance, low light extraction efficien...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/64
CPCH01L33/48H01L2933/0033
Inventor 张兴贵
Owner 深圳市三创客科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products