111 results about "Surface barrier" patented technology

Methods for processing a contact surface, for example to provide a gas barrier or lubricity or to modify the wetting properties on a medical device, are disclosed. First and second PECVD or other contact surface processing stations or devices and a contact surface holder comprising a contact surface port are provided. An opening of the contact surface can be seated on the contact surface port. The interior contact surface of the seated contact surface can be processed via the contact surface port by the first and second processing stations or devices. contact surface barrier, lubricity and hydrophobic coatings and coated contact surfaces, for example syringes and medical sample collection tubes are disclosed. A contact surface processing system and contact surface inspection apparatus and methods are also disclosed.

Effervescent powders comprising inhalable particles are disclosed, as are methods for preparing these powders. The inhalable carrier particles comprise an inorganic or organic carbonate, and an acid, and exhibit effervescence when exposed to water or humid air. The particles have a mass median aerodynamic diameter suitable for nasal, bronchial, or pulmonary administration. The inhalable particles may be used as carriers for active agents. The inhalable particles may also be used to enhance permeability of mucosal and surface barriers on an inner surface of the nose, mouth, airway, and / or lungs of a patient, as well as to loosen, thin, cleanse, and remove mucus and extrinsic surface materials from an inner surface of the nose, mouth, airway, and / or lungs of a patient in need thereof.

A method and a series of devices for dry cleaning, activating, modifying, coating, and biologically decontaminating (degerming, disinfecting, sterilizing) surfaces by means of an atmospheric pressure plasma generated using a surface barrier discharge are provided. The invention is used for dry cleaning, activating, coating, modifying, and biologically contaminating surfaces by means of an atmospheric pressure plasma generated in a defined, flowing gas atmosphere by a surface barrier discharge, comprising a high-voltage electrode that is covered with a dielectric or ferroelectric material, an electrically conducting grounded contact electrode, a high-voltage supply, a gas supply, and a gas nozzle (encompassing a gas outlet); said gas nozzle is located in the direct vicinity of the grounded contact electrode, is integrated into the contact electrode, or acts as the grounded contact electrode.

An insulating layer, an undoped first GaN layer and an AlGaN layer are laminated in this order on a surface of a semiconductor substrate. A surface barrier layer formed by a two-dimensional electron gas is provided in an interface between the first GaN layer and the AlGaN layer. A recess (first recess) which reaches the first GaN layer but does not pierce the first GaN layer is formed in a surface layer of the AlGaN layer. A first high withstand voltage transistor and a control circuit are formed integrally on the aforementioned semiconductor substrate. The first high withstand voltage transistor is formed in the first recess and on a surface of the AlGaN layer. The control circuit includes an n-channel MOSFET formed in part of the first recess, and a depression type n-channel MOSFET formed on a surface of the AlGaN layer. In this manner, there are provided a gallium nitride semiconductor device which can be used under a high temperature environment while reduction in total circuit size can be attained, and a method for producing the gallium nitride semiconductor device.

A thin silicon solar cell having a high quality spin-on dielectric layer is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A first dielectric layer is applied to the rear surface of the silicon wafer using a spin-on process. A high temperature furnace operation provides simultaneous emitter diffusion and front and rear surface passivation. During this high temperature operation, the front emitter is formed, the rear spin-on dielectric layer is cured, and the front dielectric layer is thermally grown. Barrier layers are formed on the dielectric layers. Openings are made in the barrier layers. Contacts are formed in the openings and on the back surface barrier layer.

The invention belongs to the technical field of surface protective coating, and particularly relates to a multilayer composite protective coating on the surface of a sintered NdFeB magnet by multi-arc ion plating and a process thereof. By adopting the multi-arc ion plating deposition technology, a transition layer, a corrosion-proofing layer and a surface barrier and wearing layer composite protective coating are prepared on the surface of the sintered NdFeB magnet, the corrosion resistance of the sintered NdFeB magnet is obviously improved, and the service life is prolonged. The process comprises the following steps: (1) removing oil and rust on the surface of a magnet, cleaning the surface; (2) cleaning the surface by glow discharge backwashing in a vacuum coating chamber; (3) preparing a Ti or Cr transition layer by multi-arc ion plating; (4) preparing Al or Al alloy by multi-arc ion plating; (5) preparing an AlN layer by multi-arc ion plating. By adopting the arc ion coating technology and combining the design of a multifunctional layered composite structure coating system, the process has the characteristics of high deposition efficiency, high coating binding force and compactness, simple process, environmental friendliness, no pollution and low cost, and batch large-scale production is easy to realize.

Microsphere beads are mixed with a surface barrier solid, liquid or mixture of such a liquid with a solid effective to prevent agglomeration and surface bonding of the microspheres; by the control of the application of heat and balancing temperature and active mixing, removal of water from and expansion of the microsphere is achieved. Microsphere densities of as low as 0.005 to less than 0.015 g / cm3 are realized. The surface barrier solid, liquid or mixture of such a liquid with a solid in the present invention is any one of a wide diversity of materials which meet the requirements of the intended function, i.e., to prevent the agglomeration of the microspheres during the process. Suitable materials include, by way of example, fillers, pigments, plasticizers, diluents, extenders, monomers and oligomers and the like.

A thin silicon solar cell having a high quality spin-on dielectric layer is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A first dielectric layer is applied to the rear surface of the silicon wafer using a spin-on process. A high temperature furnace operation provides simultaneous emitter diffusion and front and rear surface passivation. During this high temperature operation, the front emitter is formed, the rear spin-on dielectric layer is cured, and the front dielectric layer is thermally grown. Barrier layers are formed on the dielectric layers. Openings are made in the barrier layers. Contacts are formed in the openings and on the back surface barrier layer.

The method of the invention for extracting electrons in a vacuum consists in:making a cathode presenting at least one junction (9) between a metal (7) acting as an electron reservoir and an n-type semiconductor (8) possessing a surface potential barrier with a height of a few tenths of an electron volt, and presenting thickness lying in the range 1 nm to 20 nm;injecting electrons through the metal / semiconductor junction (9) to create a space charge in the semiconductor (8) sufficient to lower the surface potential barrier of the semiconductor to a value that is less than or equal to 1 eV relative to the Fermi level of the metal (7); andusing the bias source creating an electric field in the vacuum to control the height of the surface potential barrier (Vp) of the n-type semiconductor in order to control the emission of the electron flux towards the anode.

A method and a series of devices for dry cleaning, activating, modifying, coating, and biologically decontaminating (degerming, disinfecting, sterilizing) surfaces by means of an atmospheric pressure plasma generated using a surface barrier discharge are provided. The invention is used for dry cleaning, activating, coating, modifying, and biologically contaminating surfaces by means of an atmospheric pressure plasma generated in a defined, flowing gas atmosphere by a surface barrier discharge, comprising a high-voltage electrode that is covered with a dielectric or ferroelectric material, an electrically conducting grounded contact electrode, a high-voltage supply, a gas supply, and a gas nozzle (encompassing a gas outlet); said gas nozzle is located in the direct vicinity of the grounded contact electrode, is integrated into the contact electrode, or acts as the grounded contact electrode.

Microsphere beads are mixed with a surface barrier solid, liquid or mixture of such a liquid with a solid effective to prevent agglomeration and surface bonding of the microspheres; by the control of the application of heat and balancing temperature and active mixing, removal of water from and expansion of the microsphere is achieved. Microsphere densities of as low as 0.005 to less than 0.015 g / cm3 are realized. The surface barrier solid, liquid or mixture of such a liquid with a solid in the present invention is any one of a wide diversity of materials which meet the requirements of the intended function, i.e., to prevent the agglomeration of the microspheres during the process. Suitable materials include, by way of example, fillers, pigments, plasticizers, diluents, extenders, monomers and oligomers and the like.

An inkjet printhead for use with a nozzle capper that engages the printhead when not in use, the inkjet printhead having a nozzle plate defining an array of nozzles and having an exterior surface for engagement with the capper; such that, when the capper disengages from the exterior surface, residual ink between the capper and the exterior surface moves across the exterior surface because of a meniscus between the capper and the exterior surface; wherein, the exterior surface has gutter formations for retaining at least some of the residual ink pushed along the exterior surface by the meniscus. Gutter formations running transverse to the direction that the capper is peeled away from the nozzle plate will remove and retain some of the ink in the meniscus. While the gutters do not collect all the ink in the meniscus, they do significantly reduce the level of nozzle contamination of with different coloured ink.

The invention provides a novel nanostructure photocathode which comprises a patterned catalytic layer, a patterned vertical carbon nanotube formed on the catalytic layer and a metal nanoparticle witha plasmon effect modified on the vertical carbon nanotube. The invention further provides a preparation method of the novel nanostructure photocathode. The novel nanostructure photocathode and the preparation method provided by the invention have the benefits that an electrostatic shielding effect on the cathode surface can be effectively prevented through the patterning treatment of a cathode electron emission material, and a fringe effect is fully utilized, so that a cathode surface barrier is compressed, and a threshold of light energy required for electron emission is lowered; the carbon nanotube and the metal nanoparticle are combined, so that the excellent electrical performance and the environmental stability of the carbon nanotube are utilized, and meanwhile, a surface plasmon resonance effect of the metal nanoparticle is also utilized. Therefore, the enhancement of a light wave local electric field and the photon absorption enhancement can be realized.

Embodiments of the subject method and apparatus relate to a sequence of noncontact Corona-Kelvin Metrology that allows the determination and monitoring of interface properties in dielectric / wide band gap semiconductor structures. The technique involves the incremental application of precise and measured quantities of corona charge, QC, onto the dielectric surface followed by determination of the contact potential difference, VCPD, as the material structure response. The V-Q characteristics obtained are used to extract the surface barrier, VSB, response related to the applied corona charge. An intersection of the VCPD-QC characteristic obtained in the dark with the VOX-QC characteristic representing the dielectric response is determined. The specific VSB-QC dependence surrounding the reference VFB value is obtained and the dielectric interface trap density and its spectrum is determined. A method and apparatus to quantify and separate trapped charge components is provided.

Embodiments of the subject method and apparatus relate to a sequence of noncontact Corona-Kelvin Metrology, C-KM, that allows the determination and monitoring of interface properties in dielectric / wide band gap semiconductor structures. The technique involves the incremental application of precise and measured quantities of corona charge, QC, onto the dielectric surface followed by determination of the contact potential difference, VCPD, as the material structure response. The V-Q characteristics obtained are used to extract the surface barrier, VSB, response related to the applied corona charge. The metrology method presented determines an intersection of the VCPD-QC characteristic obtained in the dark with the VOX-QC characteristic representing the dielectric response. The specific VSB-QC dependence surrounding the reference VFB value is obtained from this method and allows the noncontact determination of the dielectric interface trap density and its spectrum. Application of embodiments of the subject metrology method to thermal oxide on n-type 4H—SiC demonstrates the modification of the Dit distribution by Fowler-Nordheim stress. In addition, an ability to quantify and separate trapped charge components is provided.

A pre-moistened (wet) with surfactant and humectant, flushable, toilet bowl liner shield which reduces the need for manual cleaning by providing a barrier shield between the bowl of the toilet and solid waste and using an Essential Oil based water surface barrier to reduce or eliminate toilet odor. The pre-moistened toilet bowl liner shield is for use in a flushable toilet wherein the water has an upper surface. The upper surface of the flat liner sits directly on top or slightly under the upper surface edge of the water. The liners reduce or prevent soiling of the interior of a toilet bowl and for efficient removal and flushing of human waste. The liners are treated with Essential Oils that create a surface barrier and reduce or eliminate toilet odor.

The invention relates to an experiment system for determining proton transfer characteristic parameters of a building material surface barrier layer, belonging to the indoor environment testing field.The experiment system comprises a compressed gas cylinder, a flow controller, a gas distributing chamber, a static environment cabin, a proton transfer reaction mass spectrometer and a bypass; the gas distributing chamber and the static environment cabin are in upper and lower placement; two opposite air inlets are arranged at the top wall circumference of the gas distribution chamber, an air outlet is arranged in the middle of the top wall, and a bottom is in a shape of an opening; a stirring fan is installed at the bottom of the static environment cabin, and an opening having the same sizeas a gas distribution chamber opening and a sampling hole are arranged at the top of the static environment cabin; the flow controller is connected between the compressed gas cylinder and the air inlet of the gas distribution chamber by a connecting pipeline; the proton transfer reaction mass spectrometer and the bypass for discharging surplus gas are respectively connected with the air outlet ofthe gas distribution chamber by the connecting pipeline; and the sampling hole of the static environment cabin is also connected with the proton transfer reaction mass spectrometer by the connecting pipeline. The experiment system has high testing precision and sensitivity, short reaction time and simple operation.

The invention discloses a manufacture method of a through hole of large size. The method comprises the following steps of: (1) etching a deep through hole; (2) forming a first layer of barrier layer metal through a first step of barrier layer metal deposit, wherein a Ti / TiN double layer or a single TiN layer is adopted; (3) forming a second layer of barrier layer metal through a second step of barrier layer metal deposit, wherein a single TiN layer is adopted; (4) filling the deep through hole with tungsten; and (5) carrying out tungsten etch-back. in the invention, two steps of different processes are adopted to deposit the barrier layer metal, namely, firstly, a Ti / TiN film with good step covering capability is deposited by MOCVD (Metal Organic Chemical Vapor Deposition Equipment), and etching to side walls and the bottom of the through hole is prevented during tungsten deposit; secondly, a TiN layer of certain depth is deposited by a method of PVD (Physical Vapor Deposition) and the TiN layer serves as a surface barrier layer of later tungsten etch-back. As a result, the electric performance and corresponding process control of the deep through hole can both ensured.

This invention relates to Incan surface barrier solar batter, which is processed by the following steps: selecting semiconductor materials InxGa1-xN(0<=x<=1) as light absorptive area and InxGa1-xN MS or MIS structures; growing GaN buffer layer with thickness of 20 to 200 nm on aquamarine underlay and then after annealing growing high temperature GaN buffer layer with 1000 to 2000nm and InxGa1-XN layer; then forming Scotty structure by setting Scotty probe metal Ni and thick lead wire on InxGa1-xN; depositing Si3N4 insulation film on InxGal-xN and then setting Scotty probe metal and lead metal to form the structure.<0}.

The invention provides a humidified flame-retardant fireproof door, which comprises a door body, a flame-retardant filling layer, surface barrier layers, a liquid storage tank, water outlets, workingcavities, pipe bodies, limiting layers, sealing blocks, sealing strips, a connecting rod, a movable rod, a rotating wheel, a spring, a liquid separation tank, a liquid collecting opening, a gauze layer and a liquid outlet groove. The flame-retardant filling layer is embedded in the door body; the surface barrier layers are tightly attached to the front end and the rear end of the door body; the liquid storage tank is opened in the top of the door body; water outlets are formed in the left lower corner and the right lower corner of the liquid storage tank; working cavities are fixedly formed inthe left side and the right side of the liquid storage tank; pipe bodies are embedded in the outer sides of the working cavities; limiting layers are tightly attached to the outer sides of the innerwalls of the pipe bodies; sealing blocks are movably connected into the limiting layers; and sealing strips are tightly attached to the outer sides of the sealing blocks. During actual use, the surface of the fireproof door can be cooled in all directions, so that the fireproof door cannot be burnt out by flames, the flame retardant effect is better, and the practicability of the device is enhanced.

The present invention relates to a method of producing a moulded fibrous product 5, said method comprising a product formed from an aqueous pulp suspension 11, said product 5 having a surface 50; covering the surface 50 with a surface barrier material 45 applied in liquid form; and drying the product 5 and the applied surface barrier material 45 to produce a moulded fibrous product 5 having a surface barrier 46; wherein a porous mould 10, 20 is provided for supporting the product 5 during the application of the surface barrier material 45; whereby the liquid surface barrier material 45 spreads on the surface 50 to fill any possible areas, so that a moulded fibrous product having a tight surface barrier 46 will be produced.

The invention discloses a light emitting diode epitaxy structure provided with a P-type ohmic contact layer and relates to a semiconductor device which is characterized by the electrode, is provided with at least one potential jump barrier or surface barrier and is special for light emission. The structure comprises a substrate, a buffer layer, an N-type semiconductor material layer, a multiple quantum well layer, a P-type electron blocking layer, a P-type semiconductor material transport layer and the P-type ohmic contact layer from top to bottom in sequence, wherein the P-type ohmic contact layer consists of AlxInyGa1-x-yN, wherein x is not less than 0 and is less than 1, y is not less than 0 and is less than 1, 1-x-y is not less than 0, the group component is gradient, the lattice constant is gradually increased along the growth direction and the forbidden bandwidth is gradually reduced. The light emitting diode epitaxy structure overcomes the defects that the wideband gap nitride semiconductor is difficult to form P-type ohmic contact and the hole supply is difficult in the prior art, and the light emitting efficiency of the LED is improved.

Disclosed is a solar cell assembly with excellent photocurrent collection efficiency. The solar cell assembly includes a solar cell and a surface barrier layer. The solar cell includes a window layer. The surface barrier layer is provided on the window layer. The surface barrier layer is made of phosphide or arsenide.

The disclosure describes new forms of chip-type and other fried or baked snack-type and / or convenience food items, including sweet goods such as cookies, doughnuts, etc., which are externally coated with or which directly incorporate into their dough matrix certain starch-based compositions. Methods of using the compositions to make the food products, and the finished food products themselves are described. As external coatings, the compositions significantly increase the crispness and tensile strength of the food item after it is cooked with the coating in place, and so change the organoleptic qualities as to provide a new form of the underlying food product. On sweet goods, the coating also provides a surface barrier that stabilizes sugar icing on the outside of the product, preventing it from becoming tacky, moist, or wet, while simultaneously reducing moisture loss from the dough, adding crispness at the surface and greatly retarding staling.

An inkjet printhead for use with a nozzle capper that engages the printhead when not in use, the inkjet printhead having a nozzle plate defining an array of nozzles and having an exterior surface for engagement with the capper; such that, when the capper disengages from the exterior surface, residual ink between the capper and the exterior surface moves across the exterior surface because of a meniscus between the capper and the exterior surface; wherein, the exterior surface has gutter formations for retaining at least some of the residual ink pushed along the exterior surface by the meniscus. Gutter formations running transverse to the direction that the capper is peeled away from the nozzle plate will remove and retain some of the ink in the meniscus. While the gutters do not collect all the ink in the meniscus, they do significantly reduce the level of nozzle contamination of with different coloured ink.

The present invention relates to the field of environmental protection, and in particular to a leaf surface barrier for ac- curately controlling cadmium absorption and transport related gene expression in rice, and an application thereof. The present inven- tion comprises: reducing a raw material, i.e., selenious acid or selenite, by using ascorbic acid to generate a nanogel, and then emul- sifying the managed for peptization to obtain a leaf surface barrier for accurately controlling cadmium absorption and transport re- lated gene expression in rice; and then mixing the leaf surface barrier with a silica sol to obtain a composite selenium and silica sol leaf surface barrier. The present invention also provides a leaf surface barricading method for accurately controlling cadmium ab- sorption and transport related gene expression in rice. By applying the leaf surface barrier, the silica sol or the composite selenium and silica sol leaf surface barrier having a particular atomization degree and a particular contration by means of foliar spray dur- ing a particular growth period of rice and within a particular time, the cadmium accumulation in rice can be effectively reduced. Ap- plying the present invention to a moderately or lightly polluted field can enable cadmium content in rice to satisfy the food hygiene standards, and therefore is significant for achieving the safe use of the large area of field polluted by heavy metal cadmium in China.

An edge protection member for positioning in a waterbody adjacent to a plurality of photovoltaic (“PV”) modules of a PV array that floats on the waterbody to protect the PV array from external forces includes a surface barrier. The surface barrier blocks flotsam on a water surface of the waterbody from floating into the PV array.

The method shows how to violate predictions of quantum mechanics for matter. For light, the method has been disclosed in patent application Photon Violation Spectroscopy. The methods are different in specifying different methods for light and matter. For matter, the method typically uses the single 5.5 MeV alpha (He++) emitted from the radioisotope Americium-241 in spontaneous decay, a thin gold foil beam splitter, and two surface barrier alpha detectors. The detectors deliver a characteristic electrical pulse with amplitude proportional to matter wave energy. A circuit reads the coincidence rate and singles rates of pulses from the two detectors. Quantum mechanics predicts that the particle would go one way or the other at the beam splitter, and coincident detections of pulses characteristic of such a particle would occur only at an easily calculated chance rate. However, the method at hand shows such characteristic pulses occur in coincidence at a rate greatly exceeding chance. By exceeding chance the method demonstrates surpassing a binding energy threshold and predictions of quantum mechanics. The degree above chance is a new measure in fundamental physics and is usable as a material science probe of the beam splitter. An apparatus specially designed to test for the absence of true coincidences and then perform a beam splitting test to show split-beam coincidences becomes useful in applying the method of Particle Violation Spectroscopy to material science. Fundamental discoveries in physics have been made with this method; therefore it is a method of discovery in physics.

The invention discloses a preparation method for a nitride light emitting diode chip and relates to a semiconductor device which is provided with at least one potential jump barrier or surface barrier and is special for light emission. The preparation method is a preparation method for a deep ultraviolet light emitting diode, which is capable of enhancing the semiconductor doping efficiency and the carrier concentration. An insulating layer / semiconductor structure is introduced into a light emitting diode structure, the semiconductor enhancement effect is realized through an external electric field, band bending is realized by utilizing the impressed voltage to cause increase of the local carrier concentration, so that the doping efficiency is indirectly improved, and the light emitting efficiency of the light emitting diode is finally improved. The preparation method overcomes the defects that the existing technology takes control to increase the doping efficiency of the light emitting diode and the carrier concentration during epitaxial growth and requires high control precision, complex process and poor repeatability.

The invention discloses a space high-energy electron detector. By means of the space high-energy electron detector, space 3.0-30.0 MeV high-energy electrons can be detected. The space high-energy electron detector comprises a probe shell, a light blocking piece, a semiconductor detector body I, a semiconductor detector body II, a semiconductor detector body III, a CsI(T1) scintillator and two photodiodes. The Au-Si surface barrier detectors and a CsI(T1) detector are combined, and the photodiodes are used for coupling the CsI(T1) detector. On one hand, due to the fact that the CsI(T1) detector is easy to machine, very thick sensors can be manufactured, and the detecting requirements for high-energy electrons can be met; on the other hand, the photodiodes, instead of photomultipliers, are adopted for coupling the CsI(T1) detector, therefore, the size and the weight of the space high-energy electron detector can be greatly reduced, and important engineering significance is achieved for satellite loads.