Novel semiconductor material In-Ga-N surface barrier type solar battery and its preparation method

Abstract

This invention relates to Incan surface barrier solar batter, which is processed by the following steps: selecting semiconductor materials InxGa1-xN(0<=x<=1) as light absorptive area and InxGa1-xN MS or MIS structures; growing GaN buffer layer with thickness of 20 to 200 nm on aquamarine underlay and then after annealing growing high temperature GaN buffer layer with 1000 to 2000nm and InxGa1-XN layer; then forming Scotty structure by setting Scotty probe metal Ni and thick lead wire on InxGa1-xN; depositing Si3N4 insulation film on InxGal-xN and then setting Scotty probe metal and lead metal to form the structure.<0}.

Description

technical field [0001] The invention relates to a semiconductor solar cell. In particular, a new semiconductor material for solar cells, In x Ga 1-x N and In x Ga 1-x A method for preparing an N surface barrier type solar cell. Background technique [0002] Since the 1990s, research on the application of Group III nitride materials and devices such as semiconductor gallium nitride GaN and its alloys such as aluminum gallium nitride AlGaN and indium gallium nitride InGaN has developed rapidly, mainly used in optoelectronic devices and high-frequency high-power microelectronic devices. In 2002, W.Walukiewicz and others in the United States found that the band gap of InN was 0.7eV, see J.Wu, W.Walukiewicz, K.M.Yu, J.W.Ager III, E.E.Haller, H.Lu, W.J.Schaff, Y.Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002), instead of 1.89 eV as previously reported. This makes In x Ga 1-x The band gap of N alloy is continuously adjustable from 3.4eV of GaN (X=0) to 0.7eV of InN...

AI Technical Summary

Problems solved by technology

[0005] At present, any type of solar cell made of InGaN has not been reported in the literature at home and abroad.

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