64 results about "Fluohydric acid" patented technology

The invention discloses a preparing method of pattern titanium oxide reverse-gelite photon crystal, which comprises the following steps: adopting quartz glass or silicon monocrystal as substrate; immersing single-dispersed silica globule solution; adopting vertical depositing method on the substrate to produce gelite film; immersing the heat gelite at 500-800 deg.c in the allocated ultraviolet photosensitive titanium oxide colossal; filling ultraviolet photosensitive titanium oxide colossal in the silica globule gap through capillary action; etching mask ultraviolet light after gelatinizing; cleaning gel part of non-illumination through organic solvent; proceeding heat disposal under 800-1000 deg.c; placing film in the 1-10 percent fluohydric acid solution to dissolve silica globule; drying under 100-150 deg.c to obtain the product.

A quantitative analysis method includes diluting lithium ion cell electrolyte in absolute ethyl alcohol or methyl alcohol, using MOH as titrant, applying automatic potentiometric titration, using (CoXV20)/(1000XM) to confirm titrimetric curve as Co referring to tritrant concentration, V referring to consumed tritrant volume ml, 20 referring to HF molecular weight and M referring to electrolyte weight, using potentiometric titrator to carry out second order derivation of titrimetric curve for cnofirming titrimetric end point.

The invention discloses a phosphor analyzing method in the high-temperature alloy, which is characterized by the following: heating to dissolve sample through compound acid such as azotic acid and hydrochloric acid or azotic acid, hydrochloric acid and hydrofluoric acid (or microwave sample-fusing furnace); adding perchloric acid to heat until smoke; dripping hydrochloric acid to remove chromium; adding complex citrate in the alkali dielectric; adding complex niobium, tantalum, zirconium, hafnium, titanium, vanadium, tungsten fluohydric acid in the azotic acid dielectric; extracting phosphor through butanol-chloroform composite agent and ammonium molybdate; reextracting organic phase through hydrochloric solution of tin chloride; testing absorbance of water phase at 680nm. The invention eliminates influence of high-content interference element, whose result is accurate and reliable with testing greatest lower limit as 0.0002%(m/m).

The invention discloses a process for cleaning a silicon chip by using diluted fluohydric acid, which comprises the step that the diluted fluohydric acid is used in the step of chemical reagent cleaning, namely the last step of the cleaning flow, wherein the volume ratio (HF to H2O) of the fluohydric acid to water in fluohydric acid cleaning solution is 1:300-1:2,000, and the cleaning time of the diluted fluohydric acid cleaning solution is between 30 and 1,000 seconds. The process has the advantages that the surface of the silicon chip cleaned by the process still is a hydrophilic surface, so adsorption phenomena of particles and part of metals caused by the conventional hydrophobic surface cleaned by DHF do not occur. By using the process, the metal contamination of the surface of the silicon chip after being cleaned by the process is less than 1E10atoms/cm2, and simultaneously the particle contamination degree (more than or equal to 0.10 micron) of the surface of the silicon chip can be less than 15 per piece, so the defects of the conventional cleaning solution in RCA cleaning are further overcome.

The present invention relates to an oil-water well shifting-in-injection pretreatment method, belonging to the field of oil field production technology. Said method includes the following steps: using pump truck to successively squeeze the prepad fluid formed from expansion-resisting expansion-reducing agent, visbreaking thickness-reducing agent and water-soluble demulsifying agent, aqueous solution-working solution composed of hydrochloric acid, fluohydric acid, corrosion inhibitor-mud acid, iron ion stabilizing agent-NTA, cleanup additive, expansion-resisting expansion-reducing agent, ethylene glycol butyl ether, and visbreaking thickness-reducing agent and clear water overflush fluid into the stratum, closing well and making reaction for 4-6 hr, making flowback, using pH test paper to determine pH, when the pH is equal to 7, stopping flowback, opening well to make normal production.

The invention discloses a new copper plating method on the silicon plate, which is characterized by the following: introducing copper seed as catalyst on the silicon plate surface to proceed coating copper in the fluohydric acid solution; reducing copper to deposit on the substrate surface to produce fastening, bright and even copper coating. The method is convenient to operate with low cost, which improves the purity and conductivity of copper film.

The invention discloses a preparing method of silicon nitride nanometer material, which comprises the following steps: stirring molding agent and nitrate to dissolve; adding silicic carbethoxy and catalyst; hydrolyzing silicic carbethoxy into silica sol under indoor temperature; adding hardener to form sol gel; drying to obtain dried gel of silica; sintering to obtain porous silica; blending porous silica and silicon powder according to rate; aerating nitrogen or ammonia gas; heating to 1000-1500 deg.c; insulating for 2-30h; cooling to indoor temperature to obtain original product; oxidizing for 2-10h; immersing in the composite acid with alcaine and fluohydric acid or nitrate and fluohydric acid; washing; drying to obtain ladder-shaped, feather-shaped or wheat-shaped silicon nitride nanometer material.

The invention relates to an etching liquid compound, which can etch the metallic layered film made from titanium or the alloy whose main content is titanium or made from aluminum or the alloy whose main content is aluminum, that formed on glass insulated base plate, silicon base plate and compound semi-conductor base plate via splash method, without damaging the bottom base plate. And the invention can control taper degree in 30-90 degrees; the density of fluoride (fluohydric acid) is 0.01-5 mass%, nd the density of oxidant is 0.1-50 mass%.

The invention provides a surface treatment method for a zirconium oxide body. The method comprises the following steps of: 1, fusing and attaching a ceramic layer on the surface to be treated of the zirconium oxide body; and 2, putting the zirconium oxide body on which the ceramic layer is sintered into a fluohydric acid solution to corrode the ceramic layer on the surface and expose a zirconium oxide substrate. The invention further provides a zirconium oxide veneering porcelain composite material and a preparation method thereof. Before veneering porcelain is sintered on zirconium oxide, the zirconium oxide surface is subjected to the mentioned treatment. The surface treatment method for the zirconium oxide body provided by the invention is simple and convenient; and due to the formation of a rough surface, hard materials such as zirconium oxide can be well bonded with an adhesive, and the bonding strength of the veneering porcelain can be increased greatly.

The invention relates to a wet process vanadium extraction technology of clay ore, providing a valuable metal technology for extracting vanadium by wet process from vanadium clay ore, which belongs to the non-ferrous metal metallurgical technology field. The invention is characterized in that disintegrating clay ore, proceeding thermostatic mixing acid leaching reaction as adding sulfuric acid, fluohydric acid and oxidation agent under certain liquid solid volumetric ratio, separating solid and liquid, removing out iron and aluminum and recycling to utilize after leaching solution being treated by multistep pH value regulation and alkali deposition solubilization reaction, depositing vanadium by ammonium salt after purified vanadium being regulated pH value, filtering, drying and calcining ammonium metavanadate which is prepared to obtain vanadium pentoxide powder. The invention directly leaches clay ore mixing with acid, has high acid leaching rate, lower energy consumption, short technical process, easy operation and control, low productive cost, environment-friendly and safety, realizes zero discharge in the production process, has no waste gas generation, and recycles waste water and valuable metal, and the recycle rate of vanadium reaches 70-75%, purity of vanadium pentoxide of the product is larger than 99%.

A process for purifying and preparing solar (radiation) energy polycrystalline silicon raw material comprises the following steps: firstly, pulverizing metallic silicon after a deoxidize processing, then acid cleaning it with aqua regia and fluohydric acid, and transferring it into a monocrystalline silicon extraction-tensile furnace for a extraction-tensile after the acid cleaning, separating air for a purification by utilizing the monocrystalline silicon extraction-tensile furnace for creation of vacuum, after a coarse extraction, transferring the polycrystalline silicon material into a zone founding furnace wherein a interval temperature grads form, eliminating white slime impurity by adopting heat extruding method. And then, a polycrystalline silicon raw material with a purity high than 99.9999%is obtained. Said invention possesses the advantages as follows: the energy consumption is reduced for vast scale and the deliverability is raised greatly by taking full advantage of traditional process equipment such as monocrystalline silicon extraction-tensile furnace and zone founding furnace, without needing reconstructions; the less process steps and the simplicity of operation is suitable for monocrystalline silicon extraction-tensile furnace of any type.

A method for growing ZnO film on Si substrate is characterized by comprising the following steps: firstly cleaning the surface of the Si substrate through chemical cleaning method, and removing the oxide layer thereof through utilizing fluohydric acid etching method, secondly placing the cleaned Si substrate into a deposition device to evaporate a metal buffer layer, thirdly placing the Si substrate which covers the metal buffer layer into a growing device to grow a ZnO homo-buffer layer, finally growing a ZnO film on the ZnO homo-buffer layer, thereby finishing the preparation of the ZnO film on the Si substrate.

The invention provides a method for stabilizing the color and luster, the water content and the hydrofluoric acid content of a nonaqueous electrolyte at a high temperature of between 50 and 70 DEG C. The method is to add a silicon amine compound and a phosphorous acid ester compound into the nonaqueous electrolyte, wherein the addition of the silicon amine compound and the phosphorous acid ester compound is 0.01 to 3 percent of the weight of the electrolyte. The compounds can effectively inhibit increase of the water content and the hydrofluoric acid content of the electrolyte and maintain stable quality of the electrolyte.

The invention discloses a tourmaline activating disposing method, which comprises the following steps: adding fluohydric acid or silicofluoridein or fluorescent stone and hydric sulphate in the tourmaline; releasing boron. The preparing method of high-activity tourmaline boron fertilizer is characterized by the following: activating tourmaline to dissolve boron element; increasing boron releasing quantity of tourmaline by 22 times than original ore; keeping tourmaline illuminating infrared negative ion; accelerating plant root growth.

The present invention relates to one kind of hydrofluoric acid producing process. Ammonium fluoride or ammonium bifluoride and sulfuric acid in the molar ratio of 2 to 1 are mixed and reacted in a reaction furnace at 150-250 deg.c for 2-5 hr, the resultant gas is condensed and purified or absorbed to obtain anhydrous hydrofluoric acid or watered hydrofluoric acid, and the resultant solid is ammonium sulfate product. The present invention adopts side product from phosphate production as material, and has the advantages of rich material and low cost.

The invention relates to a method for measuring high content lead in iron-containing dust and mud and belongs to the technical field of analytical chemistry. The method comprises the following steps of: heating and decomposing a sample in a polytetrafluoroethylene beaker at a low temperature by using hydrochloric acid, nitric acid and hydrofluoric acid until perchloric acid is fuming; slightly cooling, adding dilute nitric acid dissolving salt, supplementing hydrochloric acid when insoluble substances are present, fixing the volume to a specified volume, and measuring the lead content by employing an inductive coupling plasma atomic emission spectrometer under the optimized instrument conditions. The method has the advantages of short measurement time, easy and convenient operation and high precision and accuracy and is particularly suitable for routine analysis of lots of samples.

This invention discloses one nodularizer rare earth content testing method, which comprises the following steps: making test liquid and silicon, and the specimen liquid process steps are composed of aqua fortis and fluohydric acid specimen resolving, using boracic acid resolving over fluohydric acid to resolve the generated dinitrogen tetroxide by to process weak acid specimen liquid; the silicon process steps comprises the following steps: forming blue complex compound with azophosphon and rare earth element with largest absorption wavelength as 680nm with iron, titanium and calcium as mask with oxalic acid and with other metal element independent to measure the rare earth content by spectrophotometer.

The invention involves a tungsten filament production method and it special additives, the method includes the following steps: weighing certain tungsten oxide and putting into reactor, adding additives which weight percentage is 0.8 ~ 1.2% relative to tungsten oxide, adding aluminum nitrate; adding water and mixing uniform, drying; hydrogen gas deacidizing and preparing doping tungsten powder in multi-pipe furnace, the dew-point of hydrogen gas <=-40DEG C, the hydrogen gas flow is 1.5-1.7 m3/h, load-canoe amount is 400-500 g, push-canoe velocity is 1.5-2.5 canoe/h, the first deacidizing temperature is 600-650DEG C and the second deacidizing temperature is 800-900DEG C, the prepared doping tungsten powder is produced to tungsten strip through profiling and one time incipient fusion sintering, then is produced to thermos table tungsten wire through pressure processing; the invention has advantages of high production efficiency, high content of potassium in tungsten filament, good resistant temperature property and free-fluohydric acid pollution.

The invention discloses a super-microring electrode and preparing method, which comprises the following steps: first, taking the naked optical fiber as the filamentary insulation substrate of super-microring electrode; adapting RF magnetic sputtering technology to deposit a layer of metal film as electrode film on the optical fiber surface; second, adapting plasma reinforced chemical gas-phase deposition technology to deposit silica film as electrode insulation film on the metal film; then, corroding the silica film on one end of optical fiber through fluohydric acid to make the optical fiber covered by metal film only; adapting aluminum powder conductive glue to connect the optical fiber and copper lead; finally, assembling the copper lead of super-microring electrode in the plastic liner; adapting optical fiber knife pen to cut the super-microring electrode surface on the other end of optical fiber covered by metal film and silicon nitride film.