Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Purification and preparation method for solar energy polycrystalline silicon raw material

A technology of polysilicon and solar energy, which is applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of high energy consumption, restrictions on the popularization and use of solar cells, and high output costs, so as to reduce energy consumption and improve The effect of high productivity and simple operation

Inactive Publication Date: 2007-10-17
晶湛(南昌)科技有限公司
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But without exception, no matter which process method is used, the average power consumption per kilogram of polysilicon raw materials is about 250-400 degrees. High energy consumption, high input and low output are the main reasons for the high cost of polysilicon raw materials, which are seriously restricted. The widespread use of solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0006] The preparation method of the present invention is as follows. Firstly, the reduced metal silicon is pulverized, and then pickled with aqua regia and hydrofluoric acid. The vacuuming facility of the pulling furnace isolates the air, skips the monocrystalline silicon doping process, and increases the lifting speed of the crucible of the pulling furnace (0---30mm / h for single crystal silicon, 20-50mm / h for rough polysilicon extraction) At the same time, the vertical temperature gradient of the monocrystalline silicon pulling furnace is used to remove silicon slag impurities by using the thermal method, so as to achieve the purpose of rough purification of polysilicon raw materials, the purity reaches 99.99%, and greatly reduces energy consumption and greatly increases production capacity; after rough extraction The polysilicon material enters the zone melting furnace to form an interval temperature gradient in the zone melting furnace, and the silicon slag impurities are r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A process for purifying and preparing solar (radiation) energy polycrystalline silicon raw material comprises the following steps: firstly, pulverizing metallic silicon after a deoxidize processing, then acid cleaning it with aqua regia and fluohydric acid, and transferring it into a monocrystalline silicon extraction-tensile furnace for a extraction-tensile after the acid cleaning, separating air for a purification by utilizing the monocrystalline silicon extraction-tensile furnace for creation of vacuum, after a coarse extraction, transferring the polycrystalline silicon material into a zone founding furnace wherein a interval temperature grads form, eliminating white slime impurity by adopting heat extruding method. And then, a polycrystalline silicon raw material with a purity high than 99.9999%is obtained. Said invention possesses the advantages as follows: the energy consumption is reduced for vast scale and the deliverability is raised greatly by taking full advantage of traditional process equipment such as monocrystalline silicon extraction-tensile furnace and zone founding furnace, without needing reconstructions; the less process steps and the simplicity of operation is suitable for monocrystalline silicon extraction-tensile furnace of any type.

Description

technical field [0001] The invention relates to a method for purifying and preparing solar polysilicon raw materials by using a monocrystalline silicon pulling furnace for rough extraction and then using a zone melting furnace for refining treatment. Background technique [0002] International electronic grade high purity The mainstream technology for the preparation of polysilicon raw materials is the Siemens method, that is, trichlorosilane (SiHCl 3 ) reduction method and silane (SiH 4 ) thermal decomposition method, which utilizes dry hydrogen chloride to react with metallurgical silicon powder in a fluidized bed: Si(s)+3HCl(g)=SiHCl 3 (g)+H 2 (g) (Exothermic) generated SiHCl 3 with PCI 3 and BCl 3 There is a large difference in relative volatility (their boiling points are 31.8 ° C, 74 ° C and 13 ° C, respectively, and can be effectively purified by rectification. Finally, at 1100 ° C with H 2 Reduced SiHCl 3 , the reverse process of prio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/06C30B28/08C30B28/10
Inventor 罗应明郭力
Owner 晶湛(南昌)科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com