Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process for electroless copper on silicon chip

A technology of electroless copper plating and silicon wafer, which is applied in the direction of liquid chemical plating, metal material coating process, coating, etc., can solve the problem of high cost, and achieve the goal of avoiding impurity metal, improving purity and conductivity, and low price Effect

Inactive Publication Date: 2006-11-22
FUDAN UNIV
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has been reported in the literature to introduce copper seeds on TiN by plasma implantation as a catalyst for electroless copper plating, but this catalytic method is expensive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for electroless copper on silicon chip
  • Process for electroless copper on silicon chip
  • Process for electroless copper on silicon chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment 1: electroless copper plating on silicon chip

[0016] The monocrystalline silicon wafer (5-10Ωcm -1 ) plane polishing, followed by alternating ultrasonic cleaning with acetone and water three times each. Clean the surface of the silicon wafer with a mixture of sulfuric acid and hydrogen peroxide. Etch the silicon wafer in ammonium fluoride and hydrofluoric acid buffer solution for 1-5min, and rinse the surface with ultrapure water. Place the polished, cleaned and etched silicon wafer in a hydrofluoric acid solution containing copper sulfate, take it out after 5s-5min, and rinse it with ultrapure water. Then placed in the electroless copper plating solution, the solution components are 1-25g / L copper sulfate, 5-125g / L potassium sodium tartrate, 2-50mL / L formaldehyde, 1.4-35g / L sodium hydroxide; the solution pH is 12.5 ~13, room temperature, copper plating time is 10-30 minutes.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a new copper plating method on the silicon plate, which is characterized by the following: introducing copper seed as catalyst on the silicon plate surface to proceed coating copper in the fluohydric acid solution; reducing copper to deposit on the substrate surface to produce fastening, bright and even copper coating. The method is convenient to operate with low cost, which improves the purity and conductivity of copper film.

Description

technical field [0001] The invention belongs to the technical field of electroless copper plating, and in particular relates to a new method for realizing electroless copper plating on a silicon surface by using copper crystal seeds as a catalyst. Background technique [0002] As one of the very important metals, copper has many good physical and chemical properties, such as high thermal conductivity and electrical conductivity, strong chemical stability, high tensile strength, easy welding, corrosion resistance, plasticity, ductility sex etc. Copper is a non-ferrous metal closely related to human beings. It is widely used in electrical, light industry, machinery manufacturing, construction industry, national defense industry and other fields. It is second only to aluminum in the consumption of non-ferrous metal materials in my country. Especially in recent years, its application in printed circuit board (PCB) and ultra large integrated circuit (ULSI) has become a research ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C18/40C23C18/18
Inventor 蔡文斌王会锋
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com