36 results about "Borenium ion" patented technology

The present invention relates to an online leakage monitoring technique of a steam generator tube for monitoring leakage of the steam generator tube by analyzing concentration of an extremely small amount of boron ions in the secondary side solution of the steam generator in which a variety of ions are mixed, and the present invention is effective in that concentration of an extremely small amount of boron ions can be accurately detected, maintenance is convenient and durability is improved since analysis time is reduced considerably and operation pressure is lowered greatly by using ion chromatography provided with a boron trapping column optimized for trapping an extremely small amount of boron ions and a deionization water supplier for rising a sample line, instead of general ion chromatography provided with a concentration column and a separation column.

The invention discloses a boron isotope abundance measuring method using a carbon nanotube as an ion emitting agent. The boron isotope abundance measuring method comprises the following steps: (1) preparing a sample: preparing a carbon nanotube suspension, preparing a generating agent solution, and preprocessing rhenium strips; (2) loading the sample: manufacturing one of the rhenium strips of a preprocessed double-strip insert into a sample strip, and loading the sample strip together with an ionization strip onto a sample turnplate for following measurement; and (3) measuring the sample: sending the strip-loaded turnplate into an ion source, starting a spectrometer, heating the sample strip and the ionization strip, and when ion current occurs, starting data collection. By using the carbon nanotube as the ion emitting agent and by optimizing a sample preparing method, a sample loading technology and measuring conditions during use of the carbon nanotube as the ion emitting agent, the boron ion emitting intensity and the ionization efficiency are significantly improved and the stability of an ion flow is also improved to some extent, the measuring accuracy is improved, and the sample loading amount and the measuring temperature are reduced.

The invention discloses a preparation method for a boron-doped single-particle-layer nano-diamond film. The method includes the following steps that (1) a hot filament chemical vapor deposition method is adopted for preparing a single-particle-layer nano-diamond film with the thickness being 300-600 nm on a single-crystal silicon substrate; (2) an ion implantation method is adopted, boron ions are injected into the single-particle-layer nano-diamond film obtained in the step (1), and a film with the injected boron ions is obtained; and (3) vacuum annealing is conducted on the film which is obtained in the step (2) and injected with the boron ions, and then the boron-doped single-particle-layer nano-diamond film is obtained. The boron-doped single-particle-layer nano-diamond film prepared through the method has excellent electrochemical performance, especially has good electrochemical catalysis performance, and can be used for electrochemical catalysis oxidation treatment on organic wastewater.

The present invention relates to a method of economical extraction of magnesium, boron and calcium, while minimizing the loss of lithium, from a lithium bearing solution. More specifically, the present invention provides a method for economical extraction of magnesium, boron, and calcium, while minimizing the loss of lithium, from a lithium bearing solution comprising the steps of: (a) adding an alkali in the lithium bearing solution to precipitate magnesium hydroxide; (b) absorbing boron ions on the surface of the magnesium hydroxide by adjusting the pH to about 8.5 to about 10.5; and (c) simultaneously extracting magnesium and boron by filtering the magnesium hydroxide absorbed with the boron ions from the lithium bearing solution.

The invention provides a structure and preparation method of a TFT substrate. According to the preparation method, a multi-step filming manner is employed in the process of preparing an amorphous silicon layer, boron ion implantation is carried out on the amorphous silicon layer via CVD surface processing by utilizing a boron hydride gas after each step of filming, and the amorphous silicon layer doped with boron ions is obtained. According to the structure of the TFT substrate, implantation of boron ions is completed during amorphous silicon filming of a channel region, it is not required to doping the channel region independently after the channel region is formed, the process is effectively simplified, and the production cost is reduced.

The invention relates to selective separation techniques of metal ions and specifically discloses a boron-strontium ion composite adsorbent. The boron-strontium ion composite adsorbent comprises a boron adsorption material framework and a strontium adsorption material which is grafted on the surface or in a channel of the boron adsorption material framework. The invention also discloses a preparation method of the boron-strontium ion composite adsorbent and a method for selectively adsorbing boron ions and strontium ions from a solution system. By grafting and compounding substances which are capable of selectively adsorbing the boron ions and the strontium ions respectively, a composite adsorbent capable of selectively adsorbing the boron ions and the strontium ions can be obtained. The preparation method is simple and rapid; the prepared composite adsorbent can be used for selectively adsorbing the boron ions and the strontium ions simultaneously or respectively.

The invention relates to a method for manufacturing a super junction structure. An existing method is complex in process and high in cost. The method for manufacturing the super junction structure is characterized by including the steps of preparing an N-type heavy doping N+ substrate and forming a first N-type epitaxial layer; depositing a protective oxide layer on the upper surface of an N-type drift region and defining a groove etching region; injecting boron ions to the two side walls of a groove to form a P post region; growing a second N-type epitaxial layer in the groove and on the upper surface of the N-type drift region, and growing a P-type epitaxial layer on the second N-type epitaxial layer to fill the groove; flattening and smoothening the upper surface. According to the method for manufacturing the super junction structure, a p post region and an n post region with a high depth-to-width ratio can be formed, a groove with a high depth-to-width ratio does not need to be etched, the process is simple, the cell size of a device can be effectively reduced, specific on-resistance is lowered, and cost is reduced.

The invention discloses an o-carborane derivative and a synthesis method thereof. The method includes: step 1, taking 5-fluoro-2-methyl-1H-indene or 5-trifluoromethyl-2-methyl-1H-indene as a reactioninitiator, adopting aluminum trichloride as a catalyst, and carrying out reaction with 1-chloroacetic acid to obtain an intermediate 2; step 2, reacting the intermediate 2 with N-bromosuccinimide by taking DMF as a reaction solvent to obtain an intermediate 3; and step 3, reacting the intermediate 3 with o-carborane in an organic solvent or ionic liquid under an alkaline condition to obtain the corresponding o-carborane derivative. According to the invention, fluorine ions and relative hydrophilic groups are introduced for modification through chemical synthesis, the purposes of reducing toxicity and increasing compound polarity and cell affinity are achieved, so that the technical effect of targeted enrichment and high concentration of boron ions in tumor cells is achieved, and then the technical bottleneck that p-borane phenylalanine (BPA) is discharged by an "anti-transport" mechanism after the concentration of the BPA in the tumor cells reaches a certain number 1 is solved.

This invention is about a method to make three-terminal spin transfer torque transistor magnetic random access memory (ST3-MRAM) cell using plasma based ion implantation. The core memory stack of such ST3-MRAM cell contains a bottom digit line (or VIA), a thick dielectric insulating layer, a memory layer, another thin dielectric layer, and a magnetic reference layer on the top. After the formation of the top magnetic reference pillar by photolithography patterning and etching, the outside region of the magnetic memory layer is converted to a non-magnetic conducting lead by heavy doping of boron ions generated by plasma from boron hydrogen (BxH3x) containing gas.

The invention discloses an IGBT and a manufacturing method thereof. A target region in the IGBT is doped with first ions, the target region comprises at least one of a P-type substrate, a P-type wellregion and a P-type source region, and the diffusion coefficient of the first ions is greater than that of boron ions. The diffusion coefficient of the first ions doped in the IGBT target region is greater than the diffusion coefficient of boron ions. Unlike the prior art of adopting boron ions as doping impurities, the distribution morphology of the impurities formed under the same condition is thus more gradually changed, that is, the formed PN junctions are gradually-changed junctions, so that the breakdown voltage is improved, the turn-off time is shortened, the latch-up resistance is improved, and the performance of the IGBT is further improved. Besides, the impurity diffusion coefficient is large, so that a wider and deeper PN junction can be formed at a lower temperature in a shorter time, and a certain cost advantage is achieved.

The invention provides a trench isolation structure and a forming method thereof. A trench is filled with an oxygen-containing insulating layer; boron ions are injected into the trench, so that boronoxide can be formed; and therefore, an oxygen-containing insulating layer containing the boron oxide can be utilized to form the insulating material of the trench isolation structure, equivalently, the insulating performance of the insulating material of the trench isolation structure is improved, and the isolation performance and trench filling capacity of the trench isolation structure are improved at the same time.

The invention belongs to the technical field of oil and gas field wastewater treatment, and particularly relates to a method for removing boron ions in fracturing flow-back fluid. The method adopts a chemical agent-coupling ion exchange technology, and comprises the following steps: firstly, adding an oxidizing agent into the flow-back liquid, then adding a metal ion precipitator, adjusting the pH value of the flow-back liquid to be alkaline, and reacting for a period of time; adding an inorganic flocculant, then adding a compounded boron removal agent, reacting for a period of time, finally adjusting the pH value to be slightly acidic, and finally settling boron ions, the boron removal agent and colloidal particles under the net capturing effect; and then combining an ion exchange treatment technology so that the final boron removal rate can reach about 88%, the content of suspended matters after treatment is reduced to below 20mg / L, the content of calcium and magnesium ions is reduced to below 300mg / L, and the treated flowback fluid meets the requirements of secondary fluid preparation.

The invention discloses a preparation method of a boron ionic liquid containing super capacitor. The method comprises the steps of weighing boron-containing lithium salt and an organic compound according to the mixing ratio under an argon atmosphere condition in a gloves box; agitating and heating to obtain a stable, uniform and transparent ionic liquid solution; assembling prepared active carbon electrodes into the super capacitor. The method has the advantages that the lithium ion liquid electrolyte is high in safety and stability; in addition, no additives are added; the high electrochemical voltage is able to increase the energy storage of the super capacitor on the premise that the high energy density and circulating performance are remained.

The invention belongs to the field of deboration of desalinated seawater, and relates to an adsorbent for removing boron from desalinated seawater as well as a preparation method and application of the adsorbent for removing boron from desalinated seawater. Nano ferroferric oxide particles are used as a matrix, and chemical modification is performed on the nano ferroferric oxide particles by using SiO2; and finally, N-methyl glucosamine with specific selectivity is introduced for boron, thereby conveniently preparing a novel magnetic boron-removing adsorption material. The prepared material is used for the boron removal process of desalinated seawater, and a product with excellent performance is provided for the application of removing boron ions in the desalinated seawater. Experimental results show that the prepared material is excellent in adsorption performance, and the static boron removal rate can reach 81.21-97.42%. The prepared material has ferromagnetism and boron removal specificity, is convenient to prepare and recycle, is suitable for the boron removal process of a low-boron-content system, and avoids the problem of environmental pollution in a traditional adsorbent preparation method. The adsorbent has a potential application prospect in seawater desalination and boron removal.

The invention belongs to the technical field of water treatment, and relates to MgO-loaded activated carbon as well as a preparation method and application thereof. The preparation method of the MgO-loaded activated carbon comprises the following steps: (a) impregnating activated carbon with the water content of less than or equal to 1% in a strong oxidant solution, carrying out solid-liquid separation on an obtained impregnated product, and washing and drying an obtained solid product to obtain pre-oxidized activated carbon; and (b) uniformly mixing the pre-oxidized activated carbon and a magnesium salt solution, dropwise adding a polyethylene glycol solution into the obtained mixture, carrying out vigorous stirring reaction at room temperature of 50 DEG C, carrying out solid-liquid separation on the obtained reaction product, drying the obtained solid product, and calcining at high temperature under the protection of inert gas to obtain the MgO-loaded activated carbon. The MgO-loaded activated carbon obtained by the method provided by the invention can more quickly and effectively adsorb boron ions in seawater and / or boron industrial sewage so as to obtain desalinated water with boron content meeting the standard, and meanwhile, the environmental problem is greatly solved.

The invention belongs to the technical field of oil and gas field wastewater treatment, and in particular relates to a method for removing boron ions in fracturing flowback fluid. Using chemical agent-coupled ion exchange technology, that is, first add oxidant to the flowback liquid, then add metal ion precipitant, adjust the pH of the flowback liquid to alkaline, and react for a period of time; add inorganic flocculant, and then add compound A good boron removal agent reacts for a period of time, and finally adjusts the pH to be acidic, and finally boron ions, boron removal agent and colloidal particles settle down together through net capture; then combined with ion exchange treatment technology, the final boron removal rate can reach 88% %, and the suspended solids after treatment are reduced to below 20mg / L, the content of calcium and magnesium ions is reduced to below 300mg / L, and the treated flowback liquid meets the requirements for secondary dosing.

The invention provides three methods for treating a fluorinated surface, which is a non-negligible problem of the interior of an ion implanter, and may become more serious when a low-energy fluorine-containing ion beam is implanted to a carbon surface and / or a silicon surface. Firsty, hydrogen and / or hydrogen-containing ions (atomic and / or molecular) is introduced to the fluorine-containing surface, so that the fluorine bond is replaced by the hydrogen bond, and then the fluorine-containing particles are removed. Secondly, a boron ion beam (especially a boron ion beam with a clean formula) isimplanted onto the fluorinated surface, so that the fluorine-containing particles are removed. Thirdly, the temperature of the fluorinated surface is adjusted, generally is heated, to a temperature range, so that the fluorine bonding is weakened and the fluorine-containing particles are easily volatilized and removed. Optionally, the fluorine-containing particles can be continuously, alternativelyor flexibly removed in a vacuumizing manner.

The invention discloses a 7-hydroxyl chelating cross-linking agent and a preparation method thereof, and the preparation method is realized by the following steps: step 1, adding caustic alkali into water to obtain alkali liquor for later use, dropwise adding short-chain chlorohydrin and the alkali liquor into 2-hydroxy-1, 3-propane diamine, and reacting to obtain 5-hydroxyl propane diamine; 2, continuously dropwise adding short-chain chlorohydrin into the 5-hydroxy propane diamine aqueous solution for reaction, and obtaining 7-hydroxy propane diammonium quaternary ammonium salt after dropwise adding reaction; and 3, uniformly mixing the 7-hydroxy propylene diammonium quaternary ammonium salt with pentaerythritol according to a ratio to obtain a 7-hydroxy chelating cross-linking agent, and carrying out a firm complexation reaction on seven hydroxyls contained in the chemical structure of the 7-hydroxy chelating cross-linking agent and boron ions to ensure the stability of the boron ions in the sewage. The content of boron ions in the complexing pollution of the 7-hydroxyl chelating cross-linking agent is greatly improved.

The invention provides a trench isolation structure and a forming method thereof. A trench is filled with an oxygen-containing insulating layer; boron ions are injected into the trench, so that boronoxide can be formed; and therefore, an oxygen-containing insulating layer containing the boron oxide can be utilized to form the insulating material of the trench isolation structure, equivalently, the insulating performance of the insulating material of the trench isolation structure is improved, and the isolation performance and trench filling capacity of the trench isolation structure are improved at the same time.

The invention discloses a method for inhibiting PMOS-device threshold-voltage drift. The method includes the following steps: performing boron ion injection in gate polysilicon; forming a metal tungsten silicide on the surface of the gate polysilicon; and performing boron ion injection on the metal tungsten silicide. In the method, boron doping is performed on the metal tungsten silicide through adoption of boron ion injection after growth of the metal tungsten silicide so that the boron doping concentration of the metal tungsten silicide approximates or reaches the solid solubility of boron atoms in the metal tungsten silicide. Because the boron doping concentration of the metal tungsten silicide already approximates or reaches the maximum, diffusion of boron in the gate polysilicon towards contact surfaces of the gate polysilicon and the metal tungsten silicide in a follow-up heating process is prevented so that a risk that boron atoms aggregate in the metal tungsten silicide is reduced and thus threshold-voltage drift of a PMOS device is effectively inhibited.

An IGBT and a manufacturing method therefor, wherein a target region in the IGBT is doped with first ions; the target region comprises at least one of a P-type substrate (11), a P-type well region (13), and a P-type source region (14); and the diffusion coefficient of the first ions is greater than the diffusion coefficients of boron ions. A PN junction formed by means of the present invention is a gradual junction, thereby improving breakdown voltage, shortening turn-off time, and improving anti-latch capability.

The invention discloses a method for monitoring ion implantation doping concentration. The method comprises the following steps: fusing ion implantation operation into any half surface of an MOS structure substrate slice so that two sides of the surface of a test area are of different doping concentrations, further testing quasi-static C-V characteristic and high-frequency C-V characteristic on two sides, and calculating flat belt voltage difference values on two sides of the surface; under the same technological condition, carrying out a plurality of groups of parallel tests for different ionimplantation dosages so as to obtain a plurality of flat belt voltage difference values, wherein functional relationships between the flat belt voltage differences values and the ion implantation dosages can be matched in combination with the flat belt voltage difference values and corresponding ion implantation dosage data; according to the same technological process, carrying out ion implantation operation on an area D1 in one half of the substrate slice to be monitored and an area D2 in the other half of the substrate slice to be monitored to obtain corresponding flat belt voltage difference values delta VoFB, substituting the VoFB into the functional relationships between the flat belt voltage differences values and the ion implantation dosages so that the doping concentration of boron ions or phosphorus ions actually introduced into the substrate slice to be monitored through ion implantation can be solved determined.

The invention relates to a boronizing technology of a fusion device, and particularly discloses a pretreatment device for boronizing an internal chamber of the fusion device and application of the pretreatment device. The pre-ionization chamber is arranged outside the fusion device to pre-ionize the boron powder, so that the influence on the stability of conditions such as the vacuum degree in the vacuum chamber of the fusion device is avoided, meanwhile, the introduction of pollutants is completely eradicated, and an existing boron film in the vacuum chamber of the fusion device can be reinforced at any time. After the pre-ionized boron ions enter the vacuum chamber of the fusion device, the inner wall of the vacuum chamber can be boronized while fusion reaction discharging is carried out, an additional boronizing step is not needed, the operation steps are simplified, and the requirement that the fusion device runs very long pulses (namely, the quasi-steady state) or runs in the steady state for discharging in the future can be met.

The invention discloses a method for monitoring doping concentration in a high-temperature furnace tube, comprising the following steps: integrating an easy-to-implement diffusion operation into a MOSstructure containing a substrate piece to be monitored such that the test areas O1 and O2 have different doping profiles, further testing quasi-static C-V characteristics and high-frequency C-V characteristics of the area O2 and quasi-static C-V characteristics and high-frequency C-V characteristics of the area O1 of the MOS structure, calculating flat-band voltage values of the areas O1 and O2 of the MOS structure by performing data analysis on the measured data to obtain a flat-band voltage difference deltaVoFB of the substrate piece in the region O1 and the region O2, and substituting thedeltaVoFB into the function relationship of the flat-band voltage difference and the ion implantation dose to quickly calculate the corresponding equivalent ion implantation dose, wherein the equivalent ion implantation dose is the doping concentration of boron ions or phosphorus ions actually introduced into the substrate piece to be monitored for diffusion this time.

The invention provides a structure and preparation method of a TFT substrate. According to the preparation method, a multi-step filming manner is employed in the process of preparing an amorphous silicon layer, boron ion implantation is carried out on the amorphous silicon layer via CVD surface processing by utilizing a boron hydride gas after each step of filming, and the amorphous silicon layer doped with boron ions is obtained. According to the structure of the TFT substrate, implantation of boron ions is completed during amorphous silicon filming of a channel region, it is not required to doping the channel region independently after the channel region is formed, the process is effectively simplified, and the production cost is reduced.

The invention relates to a small glass bottle with increased chemical resistance made of a boron-containing multi-component glass, comprising a fluid pharmaceutical active agent preparation and a closure. The small glass bottle has a total volume < 4.5 ml, and the filling level of the small glass bottle with the pharmaceutical active agent preparation is max. 0.25. According to one variant, when measured at a measuring site below the plane of the container centre, based on a concentration depth profile at a depth in the region of 10 to 30 nm, the concentration of the boron-ions has a value averaged over the measurement values of the concentration depth profile, which has an increase of max. 30% in relation to the concentration of boron-ions, when measured based on a concentration depth profile at a depth in the region of 10 to 30 nm with a measuring site in the plane of the container centre. According to another variant of the invention, the glass at the base has a composition on the internal wall with a higher SiO2 proportion than on the side wall and on the transition thereof into the base