Cleaning fluorinated surface inside ion implanter

Abstract

The invention provides three methods for treating a fluorinated surface, which is a non-negligible problem of the interior of an ion implanter, and may become more serious when a low-energy fluorine-containing ion beam is implanted to a carbon surface and / or a silicon surface. Firsty, hydrogen and / or hydrogen-containing ions (atomic and / or molecular) is introduced to the fluorine-containing surface, so that the fluorine bond is replaced by the hydrogen bond, and then the fluorine-containing particles are removed. Secondly, a boron ion beam (especially a boron ion beam with a clean formula) isimplanted onto the fluorinated surface, so that the fluorine-containing particles are removed. Thirdly, the temperature of the fluorinated surface is adjusted, generally is heated, to a temperature range, so that the fluorine bonding is weakened and the fluorine-containing particles are easily volatilized and removed. Optionally, the fluorine-containing particles can be continuously, alternativelyor flexibly removed in a vacuumizing manner.

Description

technical field [0001] The present invention relates to cleaning of fluorinated surfaces inside ion implanters, and more particularly to apparatus and methods for removing fluorine from fluorinated surfaces of internal components of ion implanters. Background technique [0002] Fluorine is a commonly used element for ion implantation, but can also aggressively etch the internal components of ion implanters and cause particle control problems. Internal components include, but are not limited to, the following items: Faraday cup, chuck, aperture, electrodes, magnets, and mass analyzer. In particular, in internal components made of carbon and / or silicon, especially internal components with carbon and / or silicon as the surface material, the fluorinated surface will be more serious, which is due to carbon (especially graphite) Silicon is widely used inside ion implanters to achieve extremely low levels of metal contamination, also because fluorine is highly reactive with carbon ...

AI Technical Summary

Problems solved by technology

The first method results in more downtime for vacuum breaking and higher costs for replacing / cleaning internal components

The second method is not as effective (shorter effective time) and still requires a fair amount of downtime when implanting ion beams based on cleaning recipes

The third method has limited effect and is not easy to implement, because it impacts how the ion implanter can be used (in many cases it is not feasible)

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