The invention discloses a gating tube with a
superlattice-like structure and a preparation method of the gating tube, and belongs to the technical field of micro-nano
electronics. The gate tube comprises a substrate, and a first
metal electrode layer, a
superlattice-like layer and a second
metal electrode layer which are sequentially stacked on the substrate; the
superlattice-like layer comprisesn + 1 first sub-
layers and n second sub-
layers which are periodically and alternately stacked, the material of the first sub-
layers comprises GeS or GeSe, and the material of the second sub-layers comprises one of GeTe, ZnTe, AlTe, SiTe, BTe or CTe. Due to the fact that the GeS material and the GeSe material have high stability,
diffusion separation of Te in the second sub-layer material caused byhigh temperature can be prevented. Meanwhile, each sub-layer of the superlattice-like structure is very thin, the
coupling between adjacent wells is very strong, periodic
quantum potential wells areformed in the superlattice-like layer, and the original discrete energy levels in the
quantum wells are expanded into energy bands, so the
band gap width can be reduced, the
power consumption is reduced, and the superlattice-like structure can be better integrated with a memory device unit.