The invention discloses an
infrared transmitting high sensitivity visible
light detector and a preparation method thereof. The
detector is composed of a
passivation layer, an upper
electrode, a
heterojunction, a lower
electrode and an intrinsic
monocrystalline silicon substrate. The upper
electrode is made of a material which is conductive and is transparent to visible light and
infrared. The
heterojunction comprises an upper
heterojunction layer and a lower heterojunction layer. The upper heterojunction layer is nano-film which is sensitive to the visible light and can transmit the
infrared.The lower heterojunction layer is intrinsic
monocrystalline silicon. When the visible light and the infrared transmit the upper electrode and the upper heterojunction layer, the visible light stimulates
electron hole pairs in the heterojunction, the
electron hole pairs are collected by the upper electrode and the lower electrode and are discharged from longitudinally set
metal columns, and the infrared passes through a whole detection structure, so the visible light is detected, and moreover, transmission of the infrared is not influenced. Compared with a conventional structure, the
detector has the advantages that distance between the electrodes and a
junction area is low, so recombination rates of the
electron hole pairs can be reduced before the
electron hole pairs reach the electrodes,and collection efficiency of
photon-generated carriers is improved. Through longitudinal
metal structure design, light shielding is reduced, and sensitivity is improved.