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Fabrication method of semiconductor structure

A manufacturing method, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of consumption, time and production costs, etc., to save time and cost, reduce photolithography The number of times, the effect of guaranteed performance

Active Publication Date: 2011-11-30
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Since the formation of the opening 108 and the opening 110 requires two photolithography and two photomasks, a lot of time and production cost have been consumed.

Method used

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  • Fabrication method of semiconductor structure
  • Fabrication method of semiconductor structure
  • Fabrication method of semiconductor structure

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Embodiment Construction

[0028] During the formation of the pad and fuse structure, in order to improve the reliability of the device, two photolithography and etching processes are usually required, one is to protect the fuse area with photoresist, and the protective layer in the pad area Openings are formed in the middle to expose the pads, and then the photoresist in the fuse area is stripped; the other time is to protect the pad area with photoresist, form an opening in the protective layer of the fuse area, and leave a part of the protective layer on the The fuse structure is used for subsequent laser repair, and then the photoresist in the pad area is stripped. Since photolithography needs to be carried out twice and two photomasks are used, more time and production costs are consumed.

[0029] In view of the problems referred to above, the present invention forms the pattern of welding pad and fuse structure simultaneously on the same mask plate after spin-coating photoresist layer on protectiv...

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PUM

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Abstract

The invention discloses a semiconductor structure manufacturing method, which comprises the following steps of: providing a substrate, wherein the substrate is divided into a fuse region with a fuse structure and a bonding pad region with a bonding pad, the fuse structure comprises a first anti-etching layer on a surface layer and the bonding pad comprises a second anti-etching layer on the surface layer; forming a protective layer; forming a photoresist layer on the protective layer, patterning the photoresist layer and forming an opening in the photoresist layer, wherein the opening exposesthe protective layer at a part of a bonding pad position, at a fuse structure position and on the two sides of the fuse structure position; performing primary etching until the first anti-etching layer of the fuse region and the second anti-etching layer of the bonding pad region are exposed at the same time; and performing secondary etching to remote the second anti-etching layer on the surface layer of the bonding pad and the first anti-etching layer on the surface layer of the fuse structure. In the method, a process of performing single photoetching and then sequentially performing the primary and secondary etching is adopted to reduce photoetching times.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for manufacturing a pad and a fuse structure. Background technique [0002] With the improvement of semiconductor technology level and the increase of the complexity of integrated circuits, semiconductor components are more susceptible to various defects, and the failure of a single component such as a transistor or a memory unit often leads to functional defects of the entire integrated circuit. A common solution is to form some fusible connection lines in the integrated circuit, that is, fuse structures, so as to ensure the availability of the integrated circuit. [0003] Generally speaking, the fuse structure is used to connect redundant circuits in integrated circuits. When a defect occurs in the circuit, the fuse is blown, and the redundant circuit is used to repair or replace the defective circuit. The fuse structure is often used in memory. When the produc...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/60H01L23/525H01L23/485
CPCH01L24/05H01L2224/02166H01L2924/14H01L2924/00
Inventor 牛建礼赵金强周国平杨瑞
Owner CSMC TECH FAB2 CO LTD
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