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Preparation method of semiconductor device

A technology for semiconductors and devices, applied in the field of semiconductor preparation technology, can solve the problems of low preparation efficiency, long preparation time of semiconductor devices, complicated lithography process flow, etc.

Active Publication Date: 2021-05-14
度亘激光技术(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Photolithography is a process often used in the preparation of semiconductor devices. It belongs to a main process in the production of planar transistors and integrated circuits. The general photolithography process has to go through silicon wafer surface cleaning and drying, primer coating, spin coating photoresist, soft baking , alignment exposure, post-baking, development, hard-baking, etching, detection and other processes, the visible lithography process is more complicated, and it takes many steps to complete a lithography
For the formation of complex patterns in semiconductor devices, sometimes it takes more than two photolithography steps to obtain the final pattern. In this way, the photolithography process makes the preparation of semiconductor devices take a long time and the preparation efficiency is low.

Method used

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Embodiment Construction

[0027] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0028] In the description of this application, it should be noted that the orientation or positional relationship indicated by the terms "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the usual placement of the application product when it is used. Orientation or positional relationship is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application. In addition, the terms "first", "second", etc. are only used for distinguishing descriptions, and should not be const...

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Abstract

The invention provides a preparation method of a semiconductor device, and relates to the technical field of a semiconductor preparation process, and the method comprises the steps of: covering a wafer with a non-photosensitive substance layer; covering the non-photosensitive substance layer with a photosensitive substance layer; forming preset patterns on the photosensitive substance layer and the non-photosensitive substance layer through a one-time composition process to expose the surface of the wafer, wherein a first opening is formed in the photosensitive substance layer, a second opening is formed in the non-photosensitive substance layer, and the caliber of the first opening is smaller than that of the second opening; forming a first depth groove in the exposed wafer; forming a second depth groove in the groove bottom of the first depth groove, wherein the width of the second depth groove is smaller than or equal to that of the first depth groove; and removing the remaining non-photosensitive substance layer and photosensitive substance layer on the wafer. The semiconductor device can be formed through a one-time composition process, thereby saving the photoetching step, reducing the step of removing photoresist, and improving the preparation efficiency by reducing the photoetching times.

Description

technical field [0001] The present application relates to the technical field of semiconductor preparation technology, in particular to a method for preparing a semiconductor device. Background technique [0002] Photolithography is a process often used in the preparation of semiconductor devices. It belongs to a main process in the production of planar transistors and integrated circuits. The general photolithography process has to go through silicon wafer surface cleaning and drying, primer coating, spin coating photoresist, soft baking , alignment exposure, post-baking, developing, hard-baking, etching, detection and other processes, the visible lithography process is relatively complicated, and many steps are required to complete a lithography. For the formation of complex patterns in semiconductor devices, sometimes more than two photolithography steps are required to obtain the final pattern. In this way, the photolithography process makes the preparation of semiconduc...

Claims

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Application Information

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IPC IPC(8): H01L21/308
CPCH01L21/3086
Inventor 浦栋惠利省李靖杨国文
Owner 度亘激光技术(苏州)有限公司
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