Multi-grid changing field effect transistor structure, manufacturing method thereof and chip device

Abstract

The invention relates to a multi-grid changing field effect transistor structure, a manufacturing method thereof and a chip device. A transistor comprises a drain epitaxial layer located at a bottom layer, a source layer located at a top layer, and source extension inverted fins, a first grid and a second grid which are embedded in the drain epitaxial layer; the first grid electrode is arranged between the source electrode extension inverted fins, the second grid electrode is aligned to the source electrode extension inverted fins, and symmetrical channels which are connected in parallel from the source electrode layer to the interior of the drain electrode epitaxial layer in pairs are formed in the two sides of the first grid electrode and the two sides of the second grid electrode respectively; and in a preferred example, the drain epitaxial layer forms a shield gate bottom floating antipolar column bottom junction at a bottom portion corresponding to the source extension inverted fin. The field effect transistor architecture provided by the invention is a multi-grid-electrode change densification, and has the effects of uniformizing electron flow partitions of the drain electrode on the back surface of the substrate and the source electrode on the top surface of the substrate and reducing the grooving process.

Description

technical field [0001] The invention relates to the technical field of semiconductor transistors, in particular to a multi-gate variable field effect transistor structure, a manufacturing method thereof, and a chip device. Background technique [0002] As the key and important device of the semiconductor chip, the field effect transistor structure has a variety of structures, mainly including the following types: FinFET fin field effect transistor, JFET junction field effect transistor, surface field effect transistor, tunneling field effect transistor Transistors trench gate field effect transistor, split gate field effect transistor and super junction field effect transistor. Among them, the structure of FinFET fin field effect transistor, JFET junction field effect transistor, surface field effect transistor and tunneling field effect transistor is to design the source contact and drain contact on the same surface of the semiconductor substrate. With the trend of thinnin...

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a field effect transistor structure with multi-gate changes. The main progress is to solve the problem of uneven distribution of source electron current, product performance and reliability incompatibility, and product The problem of incompatibility between performance and processing difficulty

Images