56results about How to "Reduce energy difference" patented technology

A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.

The invention provides a novel polycyclicaromatic compound, a polymer, a production method thereof, an application thereof, materials used for an organic element, an organic electroluminescent element, a display device, and an illuminating device. The above problem is solved by providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are connected by boron atoms, oxygen atoms, or the like, thereby increasing the number of options for organic EL element materials, and also solved by providing a superior organic EL element using said novel polycyclic aromatic compound as an organic EL element material.

A method of operation of a device includes receiving a first set of samples and a second set of samples. The first set of samples corresponds to a portion of a first audio frame and the second set of samples corresponds to a second audio frame. The method further includes generating a target set of samples based on the first set of samples and a first subset of the second set of samples and generating a reference set of samples based at least partially on a second subset of the second set of samples. The method also includes scaling the target set of samples to generate a scaled target set of samples and generating a third set of samples based on the scaled target set of samples and one or more samples of the second set of samples.

An improved heater chip for an ink jet print head, the chip including an active heater array and an inactive heater array located adjacent to and extending away from the end of the active heater array. The inactive heater array provides a region adjacent the end of the active heater array that is substantially planar, and also provides a plurality of current paths which reduces energy differences between heater resistors adjacent the end of the active heater array and other heater resistors in the heater array.

A signal reception apparatus and method for communication systems. The signal reception apparatus for communication systems according to the present invention is applicable to communication environments in which a plurality of sub-bands having different frequency bands are sequentially used for communications. An embodiment of the invention has a multi-band index generation unit, a multi-band frequency generation unit, a multiplication unit, a correlation signal reception unit, and a buffer unit. The multi-band index generation unit generates a multi-band index corresponding to a sub-band to which a received signal is transmitted in correspondence with the multi-band index. The multiplication unit outputs a signal obtained by multiplying the received signal by the multi-band frequency. The correlation signal reception unit integrates and outputs the signal of the multiplication unit based on an integral time set in correspondence with the multi-band index. Further, the buffer unit buffers the signal of the correlation signal reception unit to be outputted at a predetermined data rate.

A main object of the present invention is to provide a photoelectric conversion device which is capable of improving the photoelectric conversion efficiency. The invention comprises: a p-layer; an n-layer; an i-layer disposed between the p-layer and the n-layer; a first electrode connected to the p-layer; and a second electrode connected to the n-layer, wherein the i-layer comprises a wall layer constituted by a first semiconductor, and a quantum structure portion constituted by a second semiconductor disposed in the wall layer; a band gap of the first semiconductor is wider than that of the second semiconductor; when a concentration of the n-type impurity that may be contained in the middle of the i-layer in a thickness direction thereof is defined as Cn1, a concentration of the n-type impurity that may be contained in the region on the p-layer side of the i-layer is defined as Cn2, a concentration of the p-type impurity that may be contained in the middle of the i-layer in a thickness direction thereof is defined as Cp1, and a concentration of the p-type impurity that may be contained in the region on the n-layer side of the i-layer is defined as Cp2, the relations Cn1<Cn2 and / or Cp1<Cp2 are satisfied.