30results about How to "Little change in resistivity" patented technology

A conductive paste for a thick film circuit, a thick film circuit board employing the same and a manufacturing method thereof relate to the field of thick film circuits. One of the purposes of the invention is to provide a conductive paste for a thick film circuit, which can replace a silver paste and low cost and high security. The conductive paste comprises the following components by mass percent: 72-77 percent of copper powder, 8-10 percent of inorganic adhesive, 4-6 percent of organic adhesive, 5-12 percent of organic solvent and 1-5 percent of additive. Another purpose of the invention is to provide a thick film circuit board employing the paste and adopting toughened glass as a baseplate. The third purpose of the invention is to provide a manufacturing method of the thick film circuit board. The manufacturing method comprises the steps of preparation of the conductive paste, a encapsulating paste and the baseplate, as well as the printing, encapsulating, sintering, performance test and packaging of a circuit diagram. The thick film circuit board has favorable sintering characteristic and aesthetic appearance, and can be widely used in the manufacturing field of electronic components.

A single crystal silicon wafer for use in the production of insulated gate bipolar transistors is made of single crystal silicon grown by the Czochralski method and has a gate oxide with a film thickness of from 50 to 150 nm. The wafer has an interstitial oxygen concentration of at most 7.0×1017 atoms / cm3, a resistivity variation within the plane of the wafer of at most 5% and, letting tox (cm) be the gate oxide film thickness and S (cm2) be the electrode surface area when determining the TZDB pass ratio, a density d (cm−3) of crystal originated particles (COP) having a size at least twice the gate oxide film thickness which satisfies the formula d≦−ln(0.9) / (S·tox / 2). The wafers have an increased production yield and a small resistivity variation.

The invention discloses a production process of conductive flaky copper powder, and relates to the technical field of functional materials. The process comprises eight steps of smelting, atomizing, suction filtering, vacuum drying, stirring and grinding, washing and dispersing, silver coating and washing and drying. During atomization, a high-pressure atomizing mechanism and an atomizing shell are fastened through a first screw rod, and a package leakage crucible and a high-pressure atomizing structure are fastened through a second screw rod, so that molten liquid in more stable in the pouring and atomizing process; and the copper powder crushed by high-pressure water columns jet by multiple nozzle pipes is more even and finer. According to the production process, flaky copper powder particles are washed and dispersed to form copper powder dispersion liquid, the copper powder dispersion liquid is covered with silver nitrate to form crystal nucleuses, the silver-coated copper powder coating rate is high, and the silver content reaches 50% to 75%; and the electrical resistivity reaches 2.5-3.5*10<-6> Omega.m, and the conductive performance is excellent.

The invention discloses a preparation method of quick-dry fluorescent ink, which comprises the following steps: taking a three-neck flask 1 with a mechanical stirring device and a condensing tube, adding phloroglucinol, acetyl ethyl acetate, 1, 4-dioxane and concentrated H2SO4 into the three-neck flask 1, and uniformly mixing; according to the preparation method of the quick-dry fluorescent ink, a fluorescent agent c and modified resin f are mixed, then a modified mixed base material is added, graphene subjected to oxidation treatment and a silver citrate complexing solution are mixed to prepare the modified mixed base material, and the prepared fluorescent ink is sintered to obtain the quick-dry fluorescent ink. The thermal treatment process is optimized, the conductivity of the fluorescent ink can be obviously improved, the ink prepared from the modified mixed base material has good stability, only a small amount of black precipitates appear at the bottom of a bottle after the ink is stored at room temperature for 60 days, the precipitates completely disappear after the ink is stirred again, and the prepared thin film is small in resistivity change and good in stability. The quality of the fluorescent ink is improved.

A conductive paste for a thick film circuit, a thick film circuit board employing the same and a manufacturing method thereof relate to the field of thick film circuits. One of the purposes of the invention is to provide a conductive paste for a thick film circuit, which can replace a silver paste and low cost and high security. The conductive paste comprises the following components by mass percent: 72-77 percent of copper powder, 8-10 percent of inorganic adhesive, 4-6 percent of organic adhesive, 5-12 percent of organic solvent and 1-5 percent of additive. Another purpose of the invention is to provide a thick film circuit board employing the paste and adopting toughened glass as a baseplate. The third purpose of the invention is to provide a manufacturing method of the thick film circuit board. The manufacturing method comprises the steps of preparation of the conductive paste, a encapsulating paste and the baseplate, as well as the printing, encapsulating, sintering, performance test and packaging of a circuit diagram. The thick film circuit board has favorable sintering characteristic and aesthetic appearance, and can be widely used in the manufacturing field of electronic components.

The invention provides an antioxidant copper-based conductive slurry and a preparation method thereof, and the preparation method comprises the following steps: (1) treating the copper powder with ethanol solution of aniline to prepare polyaniline modified copper powder; (2) adding a hydrochloric acid solution of ammonium persulfate into the solution prepared in the step (1) under the ice bath condition, stirring for reaction, carrying out suction filtration to intercept precipitates in a reaction system, washing with an ethanol solution, and carrying out heavy suspension to prepare a mixtureA; (3) modifying a silver layer on the surface of the product prepared in the step (2); (4) preparing an organic adhesive; (5) and processing the composite copper powder prepared in the step (3) and the organic adhesive to prepare the antioxidant copper-based conductive slurry. The conductive paste prepared by the invention has strong adhesive capacity, low resistivity and good oxidation resistance. Therefore, the conductive paste has important practical value when being applied to the electrode of the solar cell.

The invention relates to PTC (Positive Temperature Coefficient) heat-conducting ink and a preparation method thereof, and relates to the technical field of heat-conducting ink. The PTC heat-conducting ink comprises conductive particles, a heat-conducting filler A, a coupling agent and a solution, and the mass ratio of the conductive particles to the heat-conducting filler A to the coupling agent to the solution is (1-1.2): (0.5-2): (0.003-0.01): (4.5-6); the conductive particles comprise a conductive filler B, a semi-crystalline polymer and a solvent, the conductive filler B is one or a combination of more of carbon black, graphite, graphene, titanium diboride and metal micro powder, and the solvent is one or a combination of more of xylene, ethyl acetate, N, N-dimethylformamide and ethylene glycol butyl ether acetate; the heat-conducting filler A is one or a combination of more of aluminum oxide, zinc oxide, magnesium oxide, aluminum nitride and boron nitride; the solution comprises a binder and a solvent. The PTC heat-conducting ink disclosed by the invention is low in temperature control, good in heat conductivity, high in PTC ratio, stable in room-temperature resistance and fast in response; and the preparation method is simple to operate and can be suitable for large-scale production.

The invention discloses a heat-conducting conductive metal paste and a preparation method therefor. The heat-conducting conductive metal paste is prepared from the following raw materials in parts by weight: 20-30 parts of tricresyl phosphate, 12-16 parts of titanium dioxide, 2-15 parts of propylene glycol, 10-13 parts of trichloroethane, 1-10 parts of trichlorofluoromethane, 2-16 parts of calcium oxide, 6-10 parts of benzoyl peroxide, 18-20 parts of potassium peroxodisulfate and 20-30 parts of aluminum stearate. The conductive metal paste prepared with the method is relatively small in electrical resistivity, and the electrical resistivity is only 1.8-1.9 ohm.cm at the normal temperature; and the conductive metal paste is relatively small in electrical resistivity change under a high-temperature condition and has good conductivity and heat resistance.

The invention belongs to the technical field of aluminum electrolytic capacitors, and in particular relates to an electrolyte solution for ultra-low temperature aluminum electrolytic capacitors and a preparation method thereof. The electrolytic solution for ultra-low temperature aluminum electrolytic capacitors of the present application includes the following raw materials in mass percentage, the first solvent 40-50%, the second solvent 20-30%, the third solvent 5-10%, solute 1-15%, additives 0.5-5%, the additives include one or more of hydrogen remover and high-temperature stabilizer, so that it will not freeze at ultra-low temperature, and the change of resistivity is small. Normal use between ℃, no corrosion to the sealing rubber of aluminum electrolytic capacitors, good sealing performance, more stable life, no need to increase additional material and process costs, suitable for mass production and use.

Use of a composition comprising finely divided particles of (a) an electrically-conductive material; (b) one or more inorganic binders; and (c) one or more metal(s) selected from cobalt, nickel, iron and bismuth, wherein components (a), (b) and (c) are dispersed in a liquid vehicle, in the manufacture of an electrically-conductive pattern on a substrate for the purpose of increasing the resistivity of said electrically-conductive pattern.

The invention belongs to the field of power systems and enterprise power supply systems, and in particular discloses a neutral point and high damping resistor. A high damping resistor is connected inseries to the neutral point and the ground of a primary side or a secondary side of a transformer, and is then grounded through a current transformer. The high damping resistor has a resistance changeno more than +-2% at high temperature, and is also provided with a current meter and a thermometer, and the like. In case of high temperature, the resistance change is small and does not exceed +-2%.If the damping range is expanded, the high damping resistor is suitable if the ratio between capacitance current IR and IC that reaches 1:6 which is much greater than 1:1. The high damping resistor can be widely applicable to capacitance current of a unit voltage class system, better and effectively protects unit voltage class systems at large, can improve continuity and reliability of power supply of most of the systems, can lower incidence rate, increases power supply reliability, and greatly reduces economic loss. The high damping resistor can effectively suppress high frequency electric arc restrike overvoltage, can resist high temperature, obviates the need for expanding the space for heat dissipation, has a small size, and can save material cost.

The invention belongs to the field of power systems and enterprise power supply systems, and in particular discloses a neutral point and high damping resistor. A high damping resistor is connected inseries to the neutral point and the ground of a primary side or a secondary side of a transformer, and is then grounded through a current transformer. The high damping resistor has a resistance changeno more than +-2% at high temperature, and is also provided with a current meter and a thermometer, and the like. In case of high temperature, the resistance change is small and does not exceed +-2%.If the damping range is expanded, the high damping resistor is suitable if the ratio between capacitance current IR and IC that reaches 1:6 which is much greater than 1:1. The high damping resistor can be widely applicable to capacitance current of a unit voltage class system, better and effectively protects unit voltage class systems at large, can improve continuity and reliability of power supply of most of the systems, can lower incidence rate, increases power supply reliability, and greatly reduces economic loss. The high damping resistor can effectively suppress high frequency electric arc restrike overvoltage, can resist high temperature, obviates the need for expanding the space for heat dissipation, has a small size, and can save material cost.

The invention discloses a wire connection device with a quick-melt wiring mechanism and a method for using the same, and belongs to the technical field of wire connection. There is a base plate clamp, the upper end of the base plate clamp is fixedly connected with a wire side clamp, and a wire quick-melt wiring mechanism is arranged between the two wire side clamps, and the upper hinge of the wire quick-melt wiring mechanism is connected with a passage inspection cover, which can provide a new Through the use of the supporting wiring tools and the wires, the resistivity change of the circuit wires at the connection point during the wiring process is small, thereby reducing the abnormal heating of the circuit connection caused by the change of the wire resistance, and avoiding the circuit connection. Occurrence of poor contact.

Provided is a silicon single crystal manufacturing method for manufacturing a p-type silicon single crystal by the Czochralski method, from which a wafer with high resistivity, good radial uniformity of resistivity and little variation in resistivity can be obtained. The p-type silicon single crystal 2 is grown by the Czochralski method from an initial silicon melt in which the boron concentration is not more than 4E14 atoms / cm3 and the ratio of phosphorus concentration to boron concentration is not less than 0.42 and not more than 0.50.

The present invention provides a metal-oxide-containing composite, wherein metal elements in the metal oxide include at least one of Mn and Ni, and the composite is a novel composite having high density and high strength. The present invention provides the composite including a plurality of first particles comprising a metal oxide including at least one first metal element, and a first amorphous phase which is interposed between the plurality of first particles and includes the same metal element as the first metal element, the first metal element including at least one of Mn and Ni.

The invention discloses a wire connecting device with a quick-melting wiring mechanism and an application method thereof and belongs to the technical of wire connection. The device includes a wiring table, wherein left and right ends of the wiring table are respectively provided with a base plate clamp, an upper end of the base plate clamp is fixedly connected with a wire edge clamp, the wire quick-melting wiring mechanism is arranged between the two lead edge clamps, and an upper hinge of the wire quick-melting wiring mechanism is connected with a path inspection cover body. A new wire connection mode can be provided, through cooperation use of matched wiring tools and wires, change in resistivity at a connection portion of the circuit wires in the wiring process is small, abnormal heat generation at the circuit connection portion due to the change of resistance of the wire is reduced, and contact failure at the circuit connection portion is avoided.