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Composite, and structure and thermistor using same

A thermistor and composite technology, applied in the composite field, can solve problems such as thermal expansion coefficient cracks, interface peeling, etc., and achieve the effects of small resistivity change, high bonding strength, and electrical characteristics.

Active Publication Date: 2021-07-23
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cause of this problem is considered to be that in order to form a metal oxide film exhibiting high thermistor characteristics, the metal oxide particles are sintered by heat treatment at 400° C. or higher. Cracks and interfacial peeling due to the difference in thermal expansion coefficient

Method used

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  • Composite, and structure and thermistor using same
  • Composite, and structure and thermistor using same
  • Composite, and structure and thermistor using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0064] like figure 1 As shown, the complex (composite of metal oxide) 10 of the present embodiment includes:

[0065] A plurality of first particles (hereinafter also referred to as "metal oxide particles") 1, consisting of metal oxides comprising at least one first metal element, and

[0066] The first amorphous phase 2 exists in a plurality of first particles.

[0067] The metal oxide constituting the metal oxide particles 1 serves as the first metal element comprising at least one of Mn and Ni, and may further comprise at least one selected from the group consisting of Fe, Al, Co, and Cu. MN and / or NI are essential metal elements of metal oxides. Further, at least one of Fe, Al, Co, and Cu is selected to add metal elements for metal oxides. Any addition of the metal element is preferably at least one selected from the group consisting of Fe, Al and CO. The metal oxide can be a metal oxide semiconductor, in particular a spinel type structure, but is not limited thereto.

[006...

Embodiment approach 2

[0128] The present embodiment is obtained by changing the above-described complex, structural and thermistor described in Embodiment 1, as long as it is not particularly described, the same description thereof is applied to the first embodiment.

[0129] like Figure 10 (A), the complex 11 of the present embodiment includes:

[0130] A plurality of first particles (ie, the above "metal oxide particles") 1, consisting of a metal oxide comprising at least one first metal element,

[0131] The first amorphous phase 2 contains the same metal elements as the first metal element, and

[0132] A plurality of second particles (hereinafter, referred to as "resin particles") 3 is also formed by the first resin;

[0133] The first amorphous phase 2 is present between the plurality of metal oxide particles 1 and the plurality of resin particles 3.

[0134] The first resin constituting the resin particles 3 is preferably a resin that is not easily melted by heat, for example, can comprise a pol...

Embodiment 1

[0159] This embodiment relates to the reference in the first embodiment image 3 Description of the structure.

[0160] To the proportion of Mn: Ni: Al: Al: Al: Al: Al: Al: 1 (atomic ratio) is added to a proportion of 10% by mass (relative to the total mass of metal oxide particles). Acetyl. Acetone manganese, the ethanol is prepared as a solvent, mixed for 16 hours. A material mixture of the form obtained by the thickness of 10 μm is supplied by a blade method on a sheet having a thickness of 30 μm. After drying at 100 ° C for 10 hours, heating the press was heated at 150 ° C for 30 minutes at 100 MPa pressurization. Thereafter, other copper foils (upper electrodes) of the thickness of 30 μm are superimposed on the film from the film from the film (the composite layer containing the metal oxide), and the heating press is used again, heating at 250 ° C for 30 minutes under pressure of 100 MPa. To obtain the precursor structure. The precursor structure was annealed at 250 ° C for 10...

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Abstract

The present invention provides a metal-oxide-containing composite, wherein metal elements in the metal oxide include at least one of Mn and Ni, and the composite is a novel composite having high density and high strength. The present invention provides the composite including a plurality of first particles comprising a metal oxide including at least one first metal element, and a first amorphous phase which is interposed between the plurality of first particles and includes the same metal element as the first metal element, the first metal element including at least one of Mn and Ni.

Description

Technical field [0001] The present invention relates to a composite, in more detail, relates to a composite containing a metal oxide and a structural and thermistor using the complex. Background technique [0002] A thin film thermistor using a large negative temperature coefficient as a thermistor layer is widely used as a temperature sensor in various devices and devices. The film thermistor is generally made by the following operation: After forming a metal electrode on the substrate, the layer as the metal oxide particles of the metal oxide particles are formed with the metal electrode on the substrate. The metal oxide film functions as a thermistor layer. [0003] The manufacturing method has a small bonding strength of the interface between the metal oxide film and the metal electrode, and the interface peels such as the case is generated. The reason for considering this problem is that in order to form a metal oxide film showing a high thermistor characteristic, a heat tre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01H01C7/04
CPCH01C7/043H01C7/049H01C17/06533H01C17/06586G05D23/24
Inventor 舟桥修一
Owner MURATA MFG CO LTD
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