Silicon single crystal manufacturing method, silicon single crystal and wafer

Abstract

Provided is a silicon single crystal manufacturing method for manufacturing a p-type silicon single crystal by the Czochralski method, from which a wafer with high resistivity, good radial uniformity of resistivity and little variation in resistivity can be obtained. The p-type silicon single crystal 2 is grown by the Czochralski method from an initial silicon melt in which the boron concentration is not more than 4E14 atoms / cm3 and the ratio of phosphorus concentration to boron concentration is not less than 0.42 and not more than 0.50.

Description

technical field [0001] The present invention relates to a silicon single crystal manufacturing method, a silicon single crystal and a wafer, in particular to a method for manufacturing a silicon single crystal, a silicon single crystal and a wafer by the Czochralski method. Background technique [0002] Power devices installed in automobiles, home appliances, etc. should have high withstand voltage, and the resistance of the substrate affects their characteristics. Therefore, a silicon wafer used as a substrate is required to have high resistivity with little variation. [0003] If a p-type silicon single crystal is grown by the Czochralski method in which boron is added as an impurity, since the segregation coefficient of boron to the silicon single crystal is less than 1, boron is concentrated in the silicon melt during single crystal growth. The boron concentration in the silicon single crystal then increases as the single crystal grows. Therefore, the resistivity of th...

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Problems solved by technology

[0006] However, the above-mentioned conventional techniques cannot achieve the tighter radial uniformity of resistivity and the variation of resistivity between wafers, which are required for silicon single crystal wafers for power device applications

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