168 results about "Lc resonator" patented technology

A small inductor built-in electronic part whose Q is high is provided. An LC resonator comprises a laminate composed of a number of laminated electronic layers. Capacitor electrodes, common electrodes, and ground electrodes are formed between the dielectric layers. Two via holes are formed penetrating through the plurality of intermediate dielectric layers in the thickness direction thereof leaving a space therebetween. These via holes act as inductor elements.

An antenna structure comprises an unbalanced antenna for receiving digital video broadcasting signals. The antenna is dimensioned to fit within an electronic device, such as a mobile phone. The unbalanced antenna has a radiative element and a feed line connected to a matching circuit so as to achieve two or more resonances within a DVB-H frequency range, such as 470 to 702 MHz. The physical length of the radiative element is always smaller than λ / 4 at the frequencies of interest (470-702 MHz), but the electrical length can be smaller or substantially equal to λ / 4. The matching circuit can comprise one or more LC resonators depending on the number of resonances. The resonators can be series or parallel connected between the feed line and RF circuitry for processing the broadcasting signals. The antenna can be tuned to other bands above the DVB-H frequencies for use as a diversity or MIMO antenna.

A tuner circuit includes a band selection filter coupled to receive an input RF signal and provide a band selected output signal where the band selection filter includes a bank of band pass filters. Each band pass filter includes an inductor and a variable capacitor forming an LC resonator where the inductor is an integrated planar spiral inductor. The tuner circuit further includes a frequency conversion circuit coupled to receive an input signal corresponding to the band selected output signal and provide a frequency converted output signal having a predetermined frequency. The integrated planar spiral inductor can be formed using a single metal spiral or multiple metal spirals. In a multi-spiral structure, a first metal spiral having an inward spiral pattern and a second metal spiral having an outward spiral pattern to form an inductor with large inductance, low series resistance and high Q values, even at low frequency.

A method and apparatus for fully integrating a Voltage Controlled Oscillator (VCO) on an integrated circuit. The VCO is implemented using a differential-mode circuit design. The differential-mode implementation of the VCO preferably comprises a differential mode LC-resonator circuit, a digital capacitor, a differential pair amplifier, and a current source. The LC-resonator circuit includes at least one tuning varactor and two high Q inductors. The tuning varactor preferably has a wide tuning capacitance range. The tuning varactor is only used to "fine-tune" the center output frequency f0 of the VCO. The center output frequency f0 is coarsely tuned by the digital capacitor. The VCO high Q inductors comprise high gain, high self-resonance, and low loss IC inductors. The IC VCO is fabricated on a high resistivity substrate material using a trench isolated guard ring. The guard ring isolates the fully integrated VCO, and each of its component parts, from RF signals that may be introduced into the IC substrate by other devices. By virtue of the improved performance characteristics provided by the digital capacitor, the analog tuning varactor, the high Q inductor, and the trench isolated guard ring techniques, the inventive VCO is fully integrated despite process variations in IC fabrication.

Back-end-of-line (BEOL) wiring structures that include an on-chip inductor and an on-chip capacitor, as well as design structures for a radiofrequency integrated circuit. The on-chip inductor and an on-chip capacitor, which are fabricated as conductive features in different metallization levels, are vertically aligned with each other. The on-chip capacitor, which is located between the on-chip inductor and the substrate, may serve as a Faraday shield for the on-chip inductor. Optionally, the BEOL wiring structure may include an optional Faraday shield located vertically either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the top surface of the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the electrodes of the on-chip capacitor to permit tuning, during circuit operation, of a resonance frequency of an LC resonator that further includes the on-chip inductor.

An Inverted-F antenna (IFA) includes a tunable parallel LC resonator physically inserted between two antenna bodies of the IFA structure. The LC resonator is comprised of a tunable capacitor C1 connected in parallel with a combination of a DC blocking capacitor C2 and an inductor L1 connected in series to each other. A DC bias voltage is applied to the tunable capacitor C1 through a DC bias resistor R1, in order to adjust the capacitance of the tunable capacitor C1. The IFA exhibits dual band characteristics, and its resonant frequencies and bandwidths may be turned by adjusting the capacitance of the tunable capacitor C1. The tunable capacitor C1 may be a BST capacitor.

An oscillator controller, has a phase frequency detector that compares a reference signal and a frequency-divided signal and outputs a phase difference signal; a charge pump that outputs a phase error signal according to the phase difference signal output from said phase frequency detector; a loop filter that filters the phase error signal output from said charge pump and outputs an oscillation frequency controlling voltage; a voltage-controlled oscillator that has an LC resonator having a coil, a variable capacitor connected to the opposite ends of the coil at the opposite ends thereof, and a capacitor connected in series with a switch between the opposite ends of said variable capacitor, the oscillation frequency of the voltage-controlled oscillator being controlled through adjustment of the capacitance value of said variable capacitor by said oscillation frequency controlling voltage; a frequency divider that divides the frequency of the output of said voltage-controlled oscillator and outputs said frequency-divided signal; a first counter that counts the number of waves of said reference signal to a desired number and outputs a first flag signal; a second counter that counts the number of waves of said frequency-divided signal to said desired number and outputs a second flag signal; a first comparator that compares said first flag signal and said second flag signal and outputs a frequency comparison signal; and a control circuit that controls said voltage-controlled oscillator, said first counter, said second counter and said frequency divider by outputting signals thereto.

An antenna has a central core with a central coupling region. A pair of helix antenna lines is formed a surface of the central core. A balun transformer is formed on a circuit board and electrically coupled to the pair of radiating antenna lines. Wherein, the circuit board has a protruding structure to affixing into the central coupling region of the central core. A signal input / output (I / O) end of the antenna is at another end of the balun transformer. The balun transformer preferably uses the LC resonators in two paths with a desired equivalent resonant length, so as to preferably produce the difference by half wavelength.

A circuit for a voltage controlled oscillator has a bridge structure including two cross-coupled N-type transistors and two cross-coupled P-type transistors. A current mirror is coupled to the two N-type cross-coupled transistors and configured to generate a bias current. An LC resonator is coupled in parallel between the two cross-coupled N-type transistors and the two P-type cross-coupled transistors. The LC resonator includes two pairs of differential inductors mutually coupled by a mutual inductance coefficient, each pair comprising a first inductor arranged on a respective branch of an external loop, and a second inductor arranged on a respective branch of an internal loop. A first varactor is coupled to a common node and a first branch of the internal loop. A second varactor is coupled to the common node and the second branch of the internal loop.

A bandpass filter including one or more metal layers, each layer having a first region and a second region. The filter also includes two or more LC resonators and one or more coupling networks for connecting the two or more LC resonators in parallel. The two or more LC resonators are contained within the first region of the one or more layers and the one or more coupling networks are contained in the second region of the one or more layers.

A VCO comprises an LC tank circuit coupled to a plurality of cross-coupled transistor devices. A first resonance frequency of a waveform output of the VCO is dependent upon the values of a first capacitor and a first inductor of the LC tank. The VCO further comprises a first series LC resonator comprising a second capacitor and a second inductor in parallel to the first capacitor and the first inductor. The values of the second capacitor and second inductor are selected to produce a second resonance frequency that is a third harmonic of the first resonance frequency, thereby increasing a slope of the voltage controlled oscillator output. The increased slope reduces phase noise, which leads to improved signal-to-noise ratio.

The invention discloses a wireless reading circuit for a passive LC resonator sensor. The wireless reading circuit comprises a single chip microcomputer control module, a direct digital synthesis (DDS) swept signal generating module, a radio-frequency bridge detection module, a buffer amplifier module, a key and a display module, wherein four arms of a radio-frequency bridge respectively consist of three 50 ohm precision resistors and a reading coil; and one reading coil and the passive LC sensor form a loosely coupled transformer. The passive reading circuit is simple in structure and easy to implement, and can wirelessly measure the resonant frequency of the passive LC sensor to realize the passive wireless sensor function.

A band-notched ultra-wideband antenna comprises a top layer non-uniform short-circuit metal patch, a middle layer metal radiation patch, and a bottom layer metal patch. The bottom layer metal patch includes a coupled open / short circuit stub which is set close to the middle layer metal radiation patch. The equivalent circuit of the top layer non-uniform short-circuit metal patch is a parallel LC resonator, and the equivalent circuit of the coupled open / short circuit stub is a series LC resonator. The resonant frequency of the top layer non-uniform short-circuit metal patch is equivalent to the resonant frequency of the coupled open / short circuit stub, so as to function as a second-order bandstop filter to yield high notch-band-edge selectivity without increasing total circuit area of the band-notched ultra-wideband antenna.

The invention, which belongs to the integrated circuit design technology field, relates to a fourth-order active LC radio frequency band pass filter. Based on a CMOS technology, forms of current detection resistor and transconductance are used to simulate inductive coupling and to couple a two-level second-order LC resonator into the fourth-order LC band pass filter. The band pass filter comprises: the two-level second-order LC resonance circuits with a same connection mode and symmetrical structures, two input impedance matching circuits, two interstage coupling circuits and two output impedance matching circuits. In-band flatness of the second-order active LC band pass filter is bad. By using the radio frequency band pass filter of the invention, the above problem can be solved. The CMOS technology can be used to perform integration on a sheet so that an integration level can be substantially raised, which provides a feasible scheme for realizing monolithic integration on a radio-frequency front end of a wireless receiver.

The present invention includes a class-E power amplifier, comprising a driver stage (DS) including a first power amplifier with transistors, to which an input signal is inputted; a main stage (MS), including a second power amplifier with transistors, whose input is connected to the output of the DS; and a first LC resonator whose one end is connected to the output of the DS and the other end to the ground as an AC equivalent circuit and a second LC resonator whose one end is connected to the input of the MS and the other end to the ground as an AC equivalent circuit. In accordance with the present invention, as the voltage stress is reduced on the CMOS class-E power amplifier, the application of the high power supply voltage may be allowed and therefore the load impedance may be high while the same efficiency is maintained.

Methods for fabricating a back-end-of-line (BEOL) wiring structure that includes an on-chip inductor and an on-chip capacitor, as well as methods for tuning and fabricating a resonator that includes the on-chip inductor and on-chip capacitor. The fabrication methods generally include forming the on-chip capacitor and on-chip inductor in different metallization levels of the BEOL wiring structure and laterally positioned to be substantially vertical alignment. The on-chip capacitor may serve as a Faraday shield for the on-chip inductor. Optionally, a Faraday shield may be fabricated either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the directly-connected electrodes of the on-chip capacitor for tuning, during circuit operation, a resonance frequency of an LC resonator that further includes the on-chip inductor.

A bandpass filter including one or more metal layers, each layer having a first region and a second region. The filter also includes two or more LC resonators and one or more coupling networks for connecting the two or more LC resonators in parallel. The two or more LC resonators are contained within the first region of the one or more layers and the one or more coupling networks are contained in the second region of the one or more layers.

A delta-sigma modulator is disclosed which has a filter comprising a filter input, two LC resonators (LC1-1, LC1-2), and two switches (CBT / CGT). An input of each one of the two switches is connected to the filter input and a corresponding output of each one of the two switches is connected to a corresponding one of said LC resonators. Each one of the two switches is individually controllable for selectively connecting the corresponding one of the LC resonators with the filter input. The invention also relates to a method for changing the mode of operation of a delta-sigma modulator.

An electronic logic driver circuit, for driving a capacitive load between supply potentials for example for use in driving logic circuit elements on or off a chip, is disclosed. The driver circuit comprises switching devices to switch current either to or from two main voltage supply sources and two coupled inductors that act to store energy derived from the voltage sources. In operation, the coupled inductors form an LC resonator with the load such that energy stored in the inductors can be transferred to or from the load to drive a change in the voltage of the load.

A bandpass continuous-time delta-sigma modulator. The filters of the modulator are LC resonators directly connected in series. Direct connection of the resonators eliminates the need for active components in the modulator, increases linearity and decreases noise.

The invention provides a passband embedded-type frequency selection absorber based on parallel LC resonator loading, mainly to solve the problem that the structure in the prior art is complicated. Thepassband embedded-type frequency selection absorber based on parallel LC resonator loading comprises m*n periodically-arranged absorber units, wherein the absorber unit comprises a passband embedded-type wave absorption structure and a bandpass frequency selection structure which are vertically cascaded and with an air layer arranged in the middle; the passband embedded-type wave absorption structure comprises a first dielectric plate, the lower surface is printed with four strip patches, the upper surface is printed with a Jerusalem cross patch loaded with parallel LC resonators and resistors, and the two are connected through metalized through holes; the bandpass frequency selection structure comprises a second dielectric plate and a third dielectric plate which are stacked vertically,the upper surface of the second dielectric plate is printed with a first square ring patch and a first tail-winding cross patch located inside, and the upper surface of the third dielectric plate is printed with a standard cross patch and the lower surface is printed with a second square ring patch and a second tail-winding cross patch located inside.

An antenna for a wireless IC device having improved energy transfer efficiency with a wireless IC, and a wireless IC device equipped with the antenna are constructed such that the antenna includes a coil pattern and spiral coupling patterns provided at the ends of the coil pattern and disposed so as to face each other. A coupling module including a wireless IC chip and a feeder circuit substrate including a feeder circuit arranged to be coupled to the wireless IC chip is mounted on the coupling pattern so as to define a wireless IC device. The coil pattern is an open type coil pattern. The coupling patterns are arranged close to each other to define a single LC resonator. Thus, energy is concentrated in the coupling patterns, thereby improving the energy transfer efficiency between the antenna and the wireless IC chip.

The invention discloses an X-band three-digital MEMS (Micro Electric Mechanical System) tunable band-pass filter, belonging to the technical field of electronic science, and relating to an MMIC (Microwave and Millimeter Wave Integrated Circuit) and an MEMS. The tunable band-pass filter comprises two inlet ports or output ports, two matching capacitor networks CM and two LC resonators; the whole filter is in a mirror symmetrical structure relative to a coupling center line of the two LC resonators; each LC resonator consists of a square microstrip snap ring and a resonance capacitor network CL embedded into an opening; the capacitance network is realized by using an RF (Radio Frequency)-MEMS technique, the capacitance of three branches of the capacitance network is changed by using three MEMS switches controlled by direct-current biasing, thereby changing the working frequency of the filter center. In the invention, eight tunable center frequency points can be realized; and the invention has the characteristics of less insertion loss, large Q value, compact structure, small volume and low drop-down voltage, and can be applied to various X-band communication apparatuses.

An apparatus for optimizing a quality factor Q associated with an electrical resonator system includes an LC resonator and an optimizing circuit for providing a negative resistance. The optimizing circuit is electrically coupled to the resonator circuit, and includes two CMOS transistor pairs with the gates of the PMOS transistors cross-coupled with inputs to the resonator through capacitors, and the gates of the NMOS transistor cross-coupled with the inputs to the resonator through capacitors. The optimizing circuit receives at least one control voltage for varying the negative resistance by selectively biasing the PMOS transistors and NMOS transistors. The optimizing circuit also includes a current source for providing a controlled current to the CMOS transistor pairs. The current source is situated either between a supply voltage and the CMOS transistor pairs, or between the CMOS transistor pairs and a ground reference voltage. A current-control voltage controls the current flowing through the CMOS transistor pairs.