Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Passband embedded-type frequency selection absorber based on parallel LC resonator loading

A technology of frequency selection and absorber, which is applied in the field of passband embedded frequency selective absorber, can solve the problems of complex structure of passband embedded frequency select absorber, achieve simple manufacturing process, compact structural unit, weaken The effect of sensitivity

Active Publication Date: 2018-09-14
XIDIAN UNIV +1
View PDF9 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the deficiencies in the above-mentioned prior art, and propose a passband embedded frequency selective absorber based on parallel LC resonator loading, which is used to solve the structure of the existing passband embedded frequency selective absorber complex technical issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Passband embedded-type frequency selection absorber based on parallel LC resonator loading
  • Passband embedded-type frequency selection absorber based on parallel LC resonator loading
  • Passband embedded-type frequency selection absorber based on parallel LC resonator loading

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] refer to figure 1 , a pass-band embedded frequency selective absorber loaded based on a parallel LC resonator, comprising m×n absorber units periodically arranged, m=30, n=30; the absorber unit includes The upper and lower passband embedded absorbing structure 1 and the bandpass frequency selection structure 2 are supported by nylon columns in the middle, and the air layer is set to 4.5mm. The passband embedded wave-absorbing structure 1 includes printed on the upper surface such as figure 2 The shown Jerusalem cross-shaped patch 12 and the first dielectric plate 11 with four strip-shaped patches 14 printed on the lower surface use a plate with a relative dielectric constant of 2.65 and a size of 6.6mm×6.6mm×1mm . The Jerusalem cross patch 12 as figure 2 As mentioned above, the center of the cross is located on the central axis of the medium plate, the total length L of the cross body is 6.6mm, the arm width is 1mm, and the length of the horizontal strip structure ...

Embodiment 2

[0029] The structure is the same as that of Example 1, only the following parameters have been adjusted:

[0030] Absorber m×n periodically arranged absorber units, m=6, n=6, the first dielectric plate 11, the second dielectric plate 21 and the third dielectric plate 22, with a side length of 9 mm and a thickness of 0.5mm, a square plate with a relative permittivity of 1.5, the resistance of the resistor 122 is 90Ω, the passband embedded absorbing structure 1, and the thickness of the air layer between it and the bandpass frequency selective structure 2 is 10mm.

Embodiment 3

[0031] The structure of embodiment 3 is the same as that of embodiment 1, only the following parameters have been adjusted:

[0032] Absorber m×n periodically arranged absorber units, m=100, n=100, the first dielectric plate 11, the second dielectric plate 21 and the third dielectric plate 22, the side length is 6.5mm, the thickness 1.5mm, a square plate with a relative dielectric constant of 5, the resistance of the resistor 122 is 210Ω, the passband embedded absorbing structure 1, and the thickness of the air layer between it and the bandpass frequency selective structure 2 is 2mm.

[0033] Below in conjunction with simulation experiment, technical effect of the present invention is described further:

[0034] 1. Simulation conditions and content:

[0035] 1) Place the absorber described in Embodiment 1 on the xoy plane, and use the commercial simulation software HFSS_15.0 to perform the above-mentioned embodiment 1 on the plane xoy plane where the transverse electric mode ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Side length sizeaaaaaaaaaa
Thickness dimensionaaaaaaaaaa
Resistanceaaaaaaaaaa
Login to View More

Abstract

The invention provides a passband embedded-type frequency selection absorber based on parallel LC resonator loading, mainly to solve the problem that the structure in the prior art is complicated. Thepassband embedded-type frequency selection absorber based on parallel LC resonator loading comprises m*n periodically-arranged absorber units, wherein the absorber unit comprises a passband embedded-type wave absorption structure and a bandpass frequency selection structure which are vertically cascaded and with an air layer arranged in the middle; the passband embedded-type wave absorption structure comprises a first dielectric plate, the lower surface is printed with four strip patches, the upper surface is printed with a Jerusalem cross patch loaded with parallel LC resonators and resistors, and the two are connected through metalized through holes; the bandpass frequency selection structure comprises a second dielectric plate and a third dielectric plate which are stacked vertically,the upper surface of the second dielectric plate is printed with a first square ring patch and a first tail-winding cross patch located inside, and the upper surface of the third dielectric plate is printed with a standard cross patch and the lower surface is printed with a second square ring patch and a second tail-winding cross patch located inside.

Description

technical field [0001] The invention belongs to the technical field of electromagnetic protection, and relates to a passband embedded frequency selective absorber, in particular to a passband embedded frequency selective absorber based on parallel LC resonator loading. Background technique [0002] The frequency selective absorber has the filter characteristics of low-loss wave transmission in the passband and significant wave absorption in the stopband. Compared to conventional frequency selective surfaces, out-of-band specular reflections can be avoided. While ensuring the overall performance of the protected equipment, the dual-base station radar scattering cross-sectional area is reduced to achieve the purpose of stealth. [0003] The earliest frequency selective absorber appeared in the form of a wave-absorbing shield, which is a composite multi-layer structure including a layer of bandpass FSS and a layer of resistive absorbing surface. In the existing frequency sele...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01Q17/00H01Q15/00
CPCH01Q15/0093H01Q17/008
Inventor 姜文赵一凡张坤哲龚书喜
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com