261results about How to "Improve photoelectric efficiency" patented technology

Disclosed herein are a novel dye for a photoelectric device and a photoelectric device comprising the dye. More particularly, the dye for a photoelectric device incorporates different quaternary ammoniums into a carboxyl or phosphoric acid-substituted bipyridyl ligand of the dye, and a photoelectric device comprising the same. The dye for a photoelectric device as disclosed herein exhibits improved photosensitivity and light absorbing characteristics, thereby making it possible to fabricate a highly efficient photoelectric device when the dye is included in the device.

The present embodiments relate to a dye for a dye-sensitized solar cell and a dye-sensitized solar cell prepared from the same. The dye includes a fluorenyl-containing compound. The dye according to the present embodiments is applied to a light absorption layer to improve photovoltaic efficiency and increase an open-circuit voltage.

The invention relates to a light intensity-adjustable fiber coating layer ultraviolet curing apparatus. The apparatus comprises a cylindrical mounting base, UVLED light source modules are circumferentially and axially arranged in the inner cavity of the cylindrical mounting base, a cylindrical focusing lens is arranged in front of the luminescence surfaces of the UVLED light source modules to make ultraviolet lights emitted by the UVLED light source modules focused on a curing axis, an ultraviolet sensor is arranged in the inner cavity of the cylindrical mounting base, the ultraviolet sensor is connected with an UVLED power supply control module through an ultraviolet intensity signal processing module, and the UVLED power supply control module is connected with the UVLED light source modules to make the fiber drawing speed and the ultraviolet intensity form a control closed loop. The apparatus allows the output of UVLED light sources and the fiber drawing speed to be adjusted and matched in real time in order to guarantee and improve the fiber coating layer curing quality, efficiently utilize the UVLED light sources and save electric energy; and the apparatus has the advantages of reasonable and simple structure, high curing efficiency, less energy consumption, high automation degree, good coating layer quality and simple use.

The invention relates to a crystal material with a bigger size, which is manufactured by using a seed crystal induction vertical directional solidification casting method, in particular to a polycrystal or monocrystal material suitable for photoelectric application, such as silicon or silicon germanium. A traditional seed crystal used for casting a silicon crystal has a bigger size and higher consumption, thus, the invention provides a seed crystal with a smaller size and lower consumption, a method of casting a polycrystal or a monocrystal with the bigger size by using the seed crystal and the directional solidification method, the crystal material obtained by adopting the method, including a semiconductor crystal, and an application of the seed crystal in manufacturing semiconductor devices.

The invention relates to a photoelectric sensor based on one-dimensional semi-conductor nanometer structure and relative preparation method, which comprises, a single-crystal silicone base; the silicon oxide layer via hot oxygenation method formed by on the surface of single-crystal silicon base and a silicon nitride layer via the low-pressure chemical vapor deposition or plasma strengthen chemical vapor deposition deposited on the surface of silicon oxide layer. Wherein, the silicon oxide layer and the silicon nitride layer can form an insulation layer. And the invention also comprises the comb electrode couple formed by the first comb electrode and the second comb electrode prepared on the surface of insulation layer via the photo-etching / ion-etching method; the multi-tooth end of said electrode couple are oppositely arranged between which a one-dimensional semi-conductor nanometer structure is arranged. The invention has the advantages that: the preparation of micro electrode couple is standard micro processing technology which is simple; the one-dimensional semi-conductor nanometer structure is small, with large surface / volume rate and high photoelectric efficiency, while using simple electrophoresis integration to realize batch production. Said photoelectric sensor has small size, high sensitivity and the application for photo detection and light switch.

The invention relates to a heat pipe photovoltaic hot water composite system combined with a thermoelectric plate. The system comprises a whole-plate photovoltaic hot water module, a semiconductor double-layer heat exchange header, a photovoltaic and electric power control system and a water tank. The double-layer heat exchange header comprises two layers, i.e., a direct heat exchange layer and asemiconductor heating layer. On a clear day, circulating water flows through the direct heat exchange layer and the semiconductor heating layer, hot water is produced, the temperature of a photovoltaic cell is reduced and the photoelectric conversion efficiency is increased. On a somber day, the circulating water only flows through the semiconductor heating layer; the thermoelectric plate works; the water temperature is obviously raised by the heat pump effect of the thermoelectric plate; compared with the output of the hot water of a common PV (photovoltaic) / T (temperature) system, the output of the hot water is greatly increased; the temperature of the photovoltaic cell is lower and the photoelectric conversion efficiency is higher. The invention has the characteristic that the heat pipe photovoltaic hot water composite system can be miniaturized. The relationship between electric power and the output of the hot water can be regulated according to the weather and the requirement. The utilizing efficiency and the quality of solar energy are improved. Meanwhile, the dependence on an external power supply is reduced and the application range of the system is enlarged.

The invention discloses a method for preparing a sensitized ZnO nano-plate photo-anode of a PbS quantum dot, comprising the following steps: preparing ZnO nano-plates on fluorine-doped SnO2 conducting glass by using an electro-deposition method; soaking the prepared ZnO nano-plates in 0.1-0.15M of Pb (NO3)2 solution, deionized water, 0.1-0.15M of Na2S solution and the deionized water in sequence for 40s, 20s, 10s and 40s respectively to finish one cycle; and washing for 3 times by the deionized water after circulating and soaking for 8-15 times, and drying to obtain the ZnO nano-plate photo-anode. The method for preparing a sensitized ZnO nano-plate photo-anode of a PbS quantum dot has the advantages of simple equipment, fewer synthesized steps and low energy consumption, is,simple in operation, and is suitable for large-scale production; and meanwhile, the sensitized ZnO nano-plate photo-anode of the PbS quantum dot prepared by the method has large adsorption space, can be further sensitized by utilizing other semiconductor quantum dots, and has good photoelectric properties.

The invention relates to a solar photoelectric photo-thermal integrated assembly and a solar combined heat and power generation system of the solar photoelectric photo-thermal integrated assembly. The solar photoelectric photo-thermal integrated assembly is characterized by comprising a photovoltaic cell panel provided with a metal outer frame, a metal sheet type heat exchanger and a heat-preservation material layer, wherein the metal sheet type heat exchanger and the heat-preservation material layer are sequentially arranged on the back surface of the photovoltaic cell panel in parallel and in an overlapped mode, and are rapidly fixed in the metal outer frame of the photovoltaic cell panel through a metal fixing clamp, and the standard photovoltaic cell panel can be rapidly modified into the photoelectric photo-thermal integrated assembly. The photoelectric photo-thermal integrated assembly has the advantages of being compact in structure, high in efficiency, small in pressure loss, light in weight, flexible to install, high in pressure bearing performance, resistant to corrosion, low in cost and the like, further reduces the initial investment and installation space of a medium and low temperature solar thermoelectric system, lowers the operation expenses of the system, and is suitable for civil and industrial occasions requiring for both heat and power.

The invention relates to solar cell positive silver paste suitable for high-temperature sintering. The paste comprises, by weight, 70-90% of silver powder, 1-3% of glass powder, 5-15% of solvent, 3-10% of organic binding agents and 0.01-2% of sintering accelerant, wherein the silver powder is of a spherical shape, the particle size of the silver powder is not larger than 5 micrometers, and the preference particle size of the silver powder is 1-3 micrometers. Compared with the prior art, an elementary substance containing rhodium or ruthenium or iridium or compounds containing rhodium or ruthenium or iridium serve as the sintering accelerant, the sintering accelerant can effectively restrain excessive sintering of the silver powder at a high temperature, crystalline of silver is prevented from being diffused to a junction area, generation of branch junctions is prevented, and the rate of finished products of battery pieces is increased. The sintering temperature of the paste is 800-900 DEG C, taking the 15 micrometers sintering thickness as an example, electric conductivity of the positive silver paste is 2m*omega / sq, the positive silver paste has excellent weldability, and adhesive force between a (2*2mm<2>) silver layer and a silicon substrate can reach more than 3N.

The invention relates to an EVA (Ethylene Vinyl Acetate) film and a preparation method thereof. The purpose of the invention is to provide the film having higher transmittance and high stability. The technical proposal adopted is as follows: the EVA film for packaging a high-transmittance solar cell comprises an ethylene-vinylacetate copolymer, wherein the EVA film comprises the following components according to part by weight: 100 parts by weight of ethylene-vinylacetate copolymer, 0.1-6 parts by weight of cross-linking curing agent, 0.05-5 parts by weight of nucleating transparent agent, 0.02-3 parts by weight of light stability, 0.05-5 parts by weight of antioxidant and 0.01-4.0 parts by weight of tackifier. The preparation method comprises the following steps of: (1) mixing the nucleating transparent agent with the tackifir; (2) evenly mixing the light stability with the antioxidant; (3) evenly mixing the cross-linking curing agent with the ethylene-vinylacetate copolymer particles; and (4) adding the mixtures obtained in the steps (1) and (2) to the mixture obtained in the step (3), and evenly mixing the mixtures together and then performing blending extrusion.

A dye for a dye sensitized photovoltaic cell is disclosed. A dye sensitized photovoltaic cell including the dye is also disclosed. The dye includes a metal composite treated with a cation selected from imidazolium cations, pyridinium cations, pyrrolidinium cations, and quinolidinium cations.

The invention generally relates to a vertical directional solidification casting method using a crystal selection process, which is used for manufacturing a crystal material with a reserved crystal orientation and comprises a polycrystal material and a monocrystal material. When a traditional method for casting the crystal by using the crystal selection process is used for producing the crystal with a bigger size, the problems that the crystal selection effect is bad, a mixed crystal is easy to generate, the internal stress is high, the monocrystal material is hard to obtain or the expected quality requirement is hard to reach and the like exist. The problems are solved by the invention through providing a gradually-changed crystal growth area of which the horizontal cross section is gradually increased, thereby, a good crystal growth effect is obtained, and the obtained cast monocrystal or polycrystal material, such as silicon or silicon germanium, has fewer defects, high quality and a good performance, and is especially suitable for the application of the semiconductor field and the photovoltaic field.

The invention discloses a preparation method of graphene / TiO2 flower-like nano-clusters. The invention belongs to the fields of new energy materials, electrochemical, photochemical and photoelectrocatalysis. According to the invention, for a first time, a graphene salt solution is adopted as an electrolyte; short-time anodic oxidation is carried out; and the graphene / TiO2 flower-like nano-clusters are prepared. The method is simple, and has the advantages of easy operation, easy-to-control process, low cost, environment friendliness, and good repeatability. The prepared graphene / TiO2 flower-like nano-clusters have wide application prospect, and can be used as photoelectrocatalysis electrode in environmental fields. The nano-clusters can be used in organic wastewater and waste gas degradation through photoelectrocatalysis. The nano-clusters can be used as photoelectrode in fields such as solar cells, or can be used as a hydrogen storage material in the field of novel energy.

A photoelectric structure is presented, comprising one or more PiN cells. The PiN cell is formed by an intrinsic semiconductor bulk having front and rear surfaces enclosed between p- and n-type regions extending along side surfaces of said semiconductor bulk. The front and rear surfaces of the intrinsic semiconductor bulk are active surfaces of the PiN cell and said side surfaces of said semiconductor bulk formed with said p- and n-type regions are configured and operable for collecting excess charged carriers generated in said semiconductor bulk in response to collected electromagnetic radiation to which at least one of the active surfaces is exposed during the PiN cell operation.

A photoelectric conversion element having a photoelectric conversion layer between opposing anode electrode and cathode electrode, the photoelectric conversion layer having a structure in which (1) a p-type semiconductor layer and (2) a layer mixing a p-type semiconductor with an n-type semiconductor, and, as required, (3) an n-type semiconductor layer or a metal oxide layer are sequentially layered, characterized in that at least one photoelectric conversion efficiency improving means out of the following (a)-(c) is used. (a) An organic semiconductor thin film with a charge mobility of at least 0.005 cm2 / V·sec being used as at least one semiconductor layer in (1)-(3). (b) The energy gap between the work function of the anode electrode and the HOMO (highest occupied molecular orbit) of the p-type semiconductor layer in (1) and / or the energy gap between the work function of the cathode electrode and the LUMO (lowest unoccupied molecular orbit) of the n-type semiconductor layer in (3) being up to 0.5 eV. (c) A buffer layer formed of an organic compound being provided between the anode electrode and / or the cathode electrode and the photoelectric conversion layer to chemically bond the organic compound of the buffer layer with the anode electrode and / or the cathode electrode.

The invention belongs to the field of solar cell making process, in particular relates to a solar cell making process capable blocking edge diffusion by using masks. In the process, silicon dioxide or silicon nitride masks are prepared around the edge of a silicon chip before the silicon chip is diffused; the mask on a front edge is diffused, so that PN nodes are not formed around the edge of the silicon chip in a diffusing process; and PN nodes on the front side and the back side of the silicon chip are isolated, so that the problem of short circuit of upper and lower electrodes of the silicon chip is solved radically and the photoelectric efficiency of a solar cell can be improved effectively. Therefore, the process is suitable for industrial production.

The invention relates to a preparation method for an LED perpendicular structure. With a substrate or a substrate with a low-temperature GaN buffer layer as the growth foundation, U-GaN and all other layers of epitaxy sequentially grow, and the growth of an LED epitaxial wafer is completed. The method includes the steps of firstly, conducting wet etching till the surface of the growth foundation after the growth of the U-GaN layer is completed; secondly, continuing to grow U-GaN, and then sequentially growing the other layers of epitaxy on the surface of the U-GaN so as to obtain the LED epitaxial wafer, wherein the new U-GaN can directly grow on the etched U-GaN, and an inverted pyramid structure is left on the U-GaN on the surface of the growth foundation; thirdly, obtaining the LED perpendicular structure through the LED epitaxial wafer, wherein deposition is conducted on the surface of the LED epitaxial wafer to form a reflection mirror, one metal electrode pattern is manufactured, the surface of the metal electrode pattern is bonded on a metal base plate through the high-temperature metal bonding process, the substrate is stripped through the normal-temperature ultrasonic technology, and the other metal electrode pattern is manufactured on the surface of the U-GaN. By means of the preparation method, cost can be effectively reduced, and efficiency can be effectively improved.

The invention discloses a tungsten trioxide / titanium dioxide nano heterojunction thin film and a preparation and an application thereof. According to the WO3 / TiO2 nano heterojunction thin film, a nano TiO2 layer is formed on the surface of a WO3 thin film in an epitaxial growth manner on the basis of the double-matching relationship of WO3 and TiO2 energy level matching and lattice matching; and the preparation method comprises the following steps: putting the WO3 thin film into a water solution containing ammonium hexafluorotitanate (10-20mM) and boric acid (50-100mM), and carrying out treatment at a constant temperature of 25-50 DEG C for 1-70 hours; and taking out the thin film, washing the thin film with deionized water for over 1min and carrying out natural drying to obtain the WO3 / TiO2 nano heterojunction thin film. The WO3 / TiO2 nano heterojunction thin film has good visible-light absorption capability, good stability, high photoelectric efficiency and charge transfer efficiency, and can be widely applied to the fields of photocatalysis, photoelectrocatalysis, a photocatalytic wastewater fuel cell, a sensor and the like.

Disclosed are three-layer core-shell structure nanoparticles used to form a light absorption layer of solar cells including a core including a copper (Cu)-containing chalcogenide, and (i) a first shell including a tin (Sn)-containing chalcogenide and a second shell including a zinc (Zn)-containing chalcogenide; or (ii) a first shell including a zinc (Zn)-containing chalcogenide and a second shell including a tin (Sn)-containing chalcogenide, and a method of manufacturing the same.

The invention relates to a method for preparing anti-reflecting glass by an acid corrosion method from a Na2O-CaO-SiO2 system glass matrix. The method aims to reduce the surface reflectivity of glass for photovoltaic purpose, photo-thermal purpose, buildings greenhouses and decoration purpose and increase the transmissivity of the glass, thereby increasing solar utilization rate, improving photoelectric or photo-thermal conversion efficiency, enhancing vision sharpness and reducing light pollution. The purposes of the method are achieved by the following technical scheme: firstly, the glass matrix is put in a corrosion tank holding acidic solution and corroded in the corrosion tank; and after being taken out and cleaned, the glass matrix is put in a drying oven to be dried, thus the anti-reflecting glass is obtained. The method has the benefits that the cost is low, and the glass is good in anti-reflecting performance and high in transmissivity; and the transmissivity of the glass to the visible light can reach 97%.

The invention relates to a photovoltaic photo-thermal coupling heliostat mirror face structure with the adjustable reflection area and a heliostat. The mirror face structure comprises a driving motor,a mirror face driving wheel, a mirror face driven wheel, a mirror face transmission belt, a flexible reflecting surface and a flexible photovoltaic panel. The mirror face driving wheel is in driven connection with the driving motor, and the flexible reflecting surface and the flexible photovoltaic panel are attached to the outer surface of the mirror face transmission belt. According to the photovoltaic photo-thermal coupling heliostat mirror face structure, the proportion of the flexible reflecting surface to the flexible photovoltaic panel on the upper surface of the heliostat is adjusted through driving of the mirror face driving wheel so that the reflection area of the heliostat can be adjusted, the reflection areas of all heliostats can be dynamically adjusted in real time at different stages of the mirror field operation according to the mirror field energy requirement, and a part outside a reflector of the mirror face of the heliostat is used for conducting photovoltaic power generation. The heliostat mirror face with the structure is adopted, the requirement for mirror field energy scheduling can be met quickly and efficiently, the problem of abandoned light in the mirrorfield can be fundamentally solved, the photoelectric conversion efficiency of a power station is improved, and then the economic benefits of the power station are improved.

The invention belongs to the field of solar cells and specifically discloses a method for preparing a novel inorganic hole transport layer material and application thereof. The application of the application of a MnS material as a hole transport layer material. The preparation method comprises the steps of setting parameters by using a vacuum coating machine with MnS powder as a source material such that the density of the material is 3.99 g / cm3, the Z factor is 0.94, performing evaporation under a vacuum environment with the evaporation rate 0.5 to 1.0 A / S to obtain a MnS layer by deposition.According to the invention, the MnS material is applied as the novel inorganic hole transport layer material, an environment-friendly inorganic hole transport layer material is obtained, the materialis applied to a device such as a perovskite solar cell device, while high photoelectric conversion efficiency can be ensured, the stability of a solar cell is greatly improved, and a compact MnS filmwith uniform nanoparticles is prepared by vacuum evaporation method for the first time by improving parameters and conditions used in the evaporation process.

The invention discloses a silicon / perovskite laminated solar cell and a preparation method thereof. The silicon / perovskite laminated solar cell comprises a silicon cell and a bottom cell used as the silicon / perovskite laminated solar cell; a perovskite cell, used as a top cell of the silicon / perovskite laminated solar cell; and an intermediate transparent conductive layer between the silicon celland the perovskite cell. A silicon cell and a perovskite cell of the silicon / perovskite laminated solar cell adopt a parallel structure, a middle transparent conductive layer is used as a positive electrode or a negative electrode, and a front electrode of a top cell and a back electrode of a bottom cell form a corresponding negative electrode or a positive electrode together. In the silicon / perovskite laminated cell with the parallel structure, the photocurrents of the perovskite cell and the silicon cell are independent from each other, so that the photocurrent of the silicon cell can be improved, and higher photoelectric efficiency relative to a single-junction silicon cell is obtained.

The invention discloses a preparation method of a visible-light response tungsten trioxide-bismuth vanadate heterojunction thin film electrode. The preparation method comprises the following steps: dissolving 1-3g of Bi(NO3)3.5H2O in 100mL of 2mol / L acetic acid aqueous solution to obtain a bismuth nitrate solution; dissolving 0.2-1g of NH4VO3 in 100mL of 50-200mmol / L H2O2 aqueous solution to obtain a peroxy-vanadic acid solution; spinning the bismuth nitrate solution on the surface of a WO3 film, and spinning the peroxy-vanadic acid solution on the surface of the WO3 film; repeating the spinning processes for 5-20 times; performing heat treatment on the obtained film once for 1-6 hours at 400-550 DEG C; and naturally cooling to obtain the WO3 / BiVO4 heterojunction thin film electrode. The method disclosed by the invention has the characteristics of simplicity, mildness and high efficiency; and the prepared WO3 / BiVO4 heterojunction thin film electrode has the advantages of good visible light absorbability and stability, high photoelectric efficiency and good photoelectrocatalytic degradation effect of organisms, and can be applied to the fields such as photoelectrocatalytic hydrogen production, organism degradation and sensors.

The invention provides a high-luminous-efficiency ultraviolet LED epitaxial structure. The high-luminous-efficiency ultraviolet LED epitaxial structure comprises a stress control layer, an n-type current expansion layer, an active region light-emitting layer, an electron blocking layer and a p-type current expansion layer which sequentially grow on the surface of a growth substrate, wherein the electron blocking layer is of a periodic structure formed by an ScaAl1-aN layer and a GaN layer, and 0.15 < a < 0.20. In an ScAlN / GaN short-period superlattice (a periodic structure formed by a ScaAl1-aN layer and a GaN layer), , a very thin ScAlN layer can generate a very large spontaneous polarization electric field to enable the energy band of the GaN layer to be bent enough. The activation energy of Mg is reduced. High-concentration holes are obtained, and the photoelectric efficiency of the LED is effectively improved.

The invention relates to a 3D chrysanthemum-like Z type Bi2S3@CoO heterojunction composite catalyst as well as a preparation method and application thereof. The preparation method of the 3D chrysanthemum-like Z type Bi2S3@CoO heterojunction composite catalyst comprises the following steps: adding CoO and Bi(NO3)3 into redistilled water, continuously stirring, dropwise adding a Na2S aqueous solution, stirring and reacting, then centrifuging and taking a solid product, repeatedly washing the solid product with redistilled water until the solid product is neutral, drying the solid product, then putting the product into a tubular furnace, and calcining for 2 hours under 250 DEG C to obtain a target product. The degradation rate on tetracycline of Bi2S3@CoO can reach up to 90%, and the degradation rate on aureomycin of Bi2S3@CoO can reach over 70%; the preparation method is simple, convenient and efficient and is low in cost; the prepared composite material has the characteristics of narrowband gap, large specific surface area and high catalytic activity, is excellent in visible light absorption performance, excellent in stability, high in photoelectric efficiency and excellent in photoelectrocatalysis degradation effect on organic matters, and can be applied to the fields of photoelectrocatalysis degradation organic matters and sensors.

The semiconductor photoelectrode of the present invention includes a metallic substrate having irregularities in a surface and a semiconductor layer which is formed on the surface of the metallic substrate and composed of a photocatalytic material. This can increase the light absorption efficiency and, furthermore, prevent recombination of charges.