Silicon/perovskite laminated solar cell

A technology of solar cells and perovskite cells, applied in the field of solar cells, can solve problems such as low stability, affecting the life of silicon/perovskite solar cells, short-circuit current decline, etc., and achieve good stability

Inactive Publication Date: 2020-12-01
北京宏泰创新科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In addition, current perovskite materials have lower stability relative to single crystal silicon
As the performance of the perovskite sub-junction cell decays, its short-circuit current decreases, and the original photocurrent balance in the two sub-junction cells is gradually broken, which causes the short-circuit current of the silicon / perovskite stack cell to decline, which is Can seriously affect the lifetime of silicon / perovskite solar cells

Method used

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  • Silicon/perovskite laminated solar cell
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  • Silicon/perovskite laminated solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] Example 1: Preparation of silicon / wide bandgap perovskite parallel stack cell

[0075] S1. On the n-type silicon wafer that has been cleaned and textured, each of the two surfaces is coated with an intrinsic amorphous silicon layer with a thickness of 10nm and 12nm by plasma-enhanced chemical vapor deposition; and the thickness of the n-type silicon wafer is A part of one side is reserved as an area for leading out the middle transparent conductive layer;

[0076] S2. Depositing a layer of p-type amorphous silicon with a thickness of 10 nm on the 10 nm thick intrinsic amorphous silicon layer. Depositing a layer of n-type amorphous silicon with a thickness of 15 nm on the 12 nm thick intrinsic amorphous silicon layer;

[0077] S3. Prepare indium tin oxide on the n-type amorphous silicon layer by magnetron sputtering, with a thickness of 100nm, and prepare indium tin oxide on the p-type amorphous silicon layer by magnetron sputtering, with a thickness of 120nm;

[0078]...

Embodiment 2

[0084] Example 2: Preparation of silicon / narrow bandgap perovskite parallel stack cell (p-side light incident)

[0085] S1. On the n-type silicon wafer that has been cleaned and textured, each of the two surfaces is coated with an intrinsic amorphous silicon layer by plasma-enhanced chemical vapor deposition, with a thickness of 10nm and 12nm respectively;

[0086] S2. Depositing a layer of p-type amorphous silicon with a thickness of 10 nm on the 10 nm thick intrinsic amorphous silicon layer. Depositing a layer of n-type amorphous silicon with a thickness of 15 nm on the 12 nm thick intrinsic amorphous silicon layer;

[0087] S3. Prepare indium tin oxide on the n-type amorphous silicon layer by magnetron sputtering, with a thickness of 100nm, and prepare indium tin oxide on the p-type amorphous silicon layer by magnetron sputtering, with a thickness of 120nm;

[0088] S4. Depositing a layer of nickel oxide by electron beam on the indium tin oxide layer of the p-type amorphou...

Embodiment 3

[0093] Example 3: Preparation of silicon / narrow bandgap perovskite parallel stack cell (n-side light incident)

[0094] S1. On the n-type silicon wafer that has been cleaned and textured, each of the two surfaces is coated with an intrinsic amorphous silicon layer by plasma-enhanced chemical vapor deposition, with a thickness of 10nm and 12nm respectively;

[0095] S2. Depositing a layer of p-type amorphous silicon with a thickness of 10 nm on the 10 nm thick intrinsic amorphous silicon layer. Depositing a layer of n-type amorphous silicon with a thickness of 15 nm on the 12 nm thick intrinsic amorphous silicon layer;

[0096] S3. Prepare indium tin oxide on the p-type amorphous silicon layer by magnetron sputtering, with a thickness of 100nm, and prepare indium tin oxide on the n-type amorphous silicon layer by magnetron sputtering, with a thickness of 120nm;

[0097] S4. Depositing a layer of tin oxide by electron beam on the indium tin oxide layer of the n-type amorphous s...

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Abstract

The invention discloses a silicon / perovskite laminated solar cell and a preparation method thereof. The silicon / perovskite laminated solar cell comprises a silicon cell and a bottom cell used as the silicon / perovskite laminated solar cell; a perovskite cell, used as a top cell of the silicon / perovskite laminated solar cell; and an intermediate transparent conductive layer between the silicon celland the perovskite cell. A silicon cell and a perovskite cell of the silicon / perovskite laminated solar cell adopt a parallel structure, a middle transparent conductive layer is used as a positive electrode or a negative electrode, and a front electrode of a top cell and a back electrode of a bottom cell form a corresponding negative electrode or a positive electrode together. In the silicon / perovskite laminated cell with the parallel structure, the photocurrents of the perovskite cell and the silicon cell are independent from each other, so that the photocurrent of the silicon cell can be improved, and higher photoelectric efficiency relative to a single-junction silicon cell is obtained.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silicon / perovskite laminated solar cell. Background technique [0002] Perovskite solar cell is a new type of solar cell, which has the advantages of high efficiency, solution preparation, flexibility, light weight, and low cost, and has attracted widespread attention worldwide. The conversion efficiency of perovskite solar cells has approached that of silicon-based solar cells. With the in-depth research on silicon-based solar cells, the cell efficiency is close to its theoretical maximum efficiency. Therefore, improving the photoelectric conversion efficiency of solar cells has become the key to the development of this field. [0003] Stacked battery technology is one of the effective ways to improve the photoelectric conversion efficiency of solar cells. Because perovskite materials have very strong absorption in the visible light region of 350nm-700nm, while silicon ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/16H01L31/075H01L31/076H01L31/077H01L51/42
CPCH01L25/167H01L31/077H01L31/076H01L31/075H10K30/30Y02E10/548Y02E10/549Y02E10/547
Inventor 毛霖唐泽国
Owner 北京宏泰创新科技有限公司
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