147 results about "Charge transfer efficiency" patented technology

A distance image sensor for removing the background light and improving the charge transfer efficiency in a device for measuring the distance to an object by measuring the time-of-flight of the light.In a distance image sensor for determining the signals of two charge storage nodes which depend on the delay time of the modulated light, a signal by the background light is received from the third charge storage node or the two charge storage nodes in a period when the modulated light does not exist, and is subtracted from the signal which depends on the delay time of the two charge storage nodes, so as to remove the influence of the background. Also by using a buried diode as a photo-detector, and using an MOS gate as gate means, the charge transfer efficiency improves. The charge transfer efficiency is also improved by using a negative feedback amplifier where a capacitor is disposed between the input and output.

A distance image sensor for removing the background light and improving the charge transfer efficiency in a device for measuring the distance to an object by measuring the time-of-flight of the light. In a distance image sensor for determining the signals of two charge storage nodes which depend on the delay time of the modulated light, a signal by the background light is received from the third charge storage node or the two charge storage nodes in a period when the modulated light does not exist, and is subtracted from the signal which depends on the delay time of the two charge storage nodes, so as to remove the influence of the background. Also by using a buried diode as a photo-detector, and using an MOS gate as gate means, the charge transfer efficiency improves. The charge transfer efficiency is also improved by using a negative feedback amplifier where a capacitor is disposed between the input and output.

More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and / or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.

A unit pixel of a complementary metal-oxide semiconductor (CMOS) image sensor includes a photoelectric conversion element, a transfer transistor, a boosting capacitor and a signal transfer circuit, where the photoelectric conversion element generates a charge based on incident light, the transfer transistor transfers the charge to a floating diffusion node in response to a transfer control signal, the boosting capacitor is disposed between a gate of the transfer transistor and the floating diffusion node, the signal transfer circuit transfers an electric potential of the floating diffusion node in response to a selection signal, and a dynamic range of the electric potential of the floating diffusion node may be widened and a drain-source voltage difference of the transfer transistor may be increased so that the charge transfer efficiency may be enhanced.

The invention provides a light anode and a flexible solar battery thereof. The light anode comprises a wire and a semiconductor nanomaterial on the wire, wherein the semiconductor nanomaterial is a nanotube of a metallic oxide directly growing on the wire. The light anode can reduce and even eliminate the interference resistance so as to improve the charge transfer efficiency and improve the conversion efficiency of the flexible solar battery.

An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.

The invention provides a charge transfer efficiency test method of a post-neutron irradiation charge coupled device. According to the method, when the readout of CCD signal charges occur, an overscanning pixel output unit is additionally adopted; defects which are generated due to the induction of neutron irradiation are made to capture CCD signal charges; captured CCD signal charges are collected in the overscanning pixel output unit; signal charge loss generated by the induction of neutron irradiation can be displayed intuitively through image output; saturated illumination is adopted to eliminate the influence of dark signal peaks on signal charge packets in a process in which the signal charge packets are sequentially transferred between CCD transfer channels; and requirements for the consistency of the size of the signal charge packets in a charge transfer efficiency test (CTE) after different neutron fluence irradiation can be satisfied. With the method adopted, the problem that a CTE test is inaccurate or even if cannot be performed existing on the post-neutron irradiation charge coupled device can be solved.

A charge pump circuit alleviates the body effect of a charge transfer transistor, thereby improving the charge transfer efficiency of the charge transfer transistor and thus pumping efficiency. The charge pump circuit includes a plurality of boosting stages that have input nodes and boosting nodes that are connected in series. Each of the boosting stages includes a charge transfer transistor and a first switch transistor, their respective gates being connected together. A first terminal of the charge transfer transistor is connected to one of the input nodes, and a second terminal of the charge transfer transistor is connected to one of the boosting nodes. The first switch transistor makes the voltage level at the bulk of the charge transfer transistors equal to the voltage level at the first terminal of the charge transfer transistor while charges are being transferred through the charge transfer transistor.

An image sensor includes: a gate structure on a semiconductor layer of a first conductive type; a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a predetermined depth from a surface portion of the semiconductor layer; spacers formed on sidewalls of the gate structure; and a second impurity region of a second conductive type formed in a portion of the semiconductor layer under the first impurity region, wherein the first impurity region includes: a first region of which portion aligned with the one side of the gate structure; a second region aligned with the one of the spacers and having a concentration higher than that of the first region; and a third region apart from the one side of the gate structure with a predetermined distance and having a concentration higher than that of the second region.

The invention provides an organic photoelectric device, which comprises an anode, a functional layer, a cathode and a hole transport layer located between the anode and the functional layer, wherein the functional layer comprises a photoelectric active layer or a light-emitting layer; the material of the hole transport layer comprises black phosphorus; the black phosphorus is single-layer or multi-layer; and the transverse size of the black phosphorus is 1nn to 100 microns. According to the organic photoelectric device, the interfacial charge transfer efficiency and the hole mobility of a bulk phase can be improved, thereby effectively improving the performance of the device. The invention further provides a preparation method of the organic photoelectric device. The method comprises the steps of providing the anode; preparing the hole transport layer on the anode by adopting a coating or printing method and then preparing the functional layer on the hole transport layer; and preparing the cathode on the functional layer to obtain the organic photoelectric device; or providing the cathode; preparing the functional layer on the cathode and then preparing the hole transport layer on the functional layer adopting the coating or printing method; and preparing the anode on the hole transport layer to obtain the organic photoelectric device. The preparation method is simple and easy to operate.

The invention relates to a pixel structure for improving a charge transfer efficiency and reducing dark current and a working method of the pixel structure. An N end of a photoelectric diode PD is connected with a source electrode of a transmission transistor TX, a P end of the photoelectric diode PD is grounded, a drain electrode of the transmission transistor TX, a source electrode of a resetting transistor RST, a grid electrode of a source tracking transistor SF and one end of a floating dispersion area FD are connected together, the other end of the floating dispersion area FD is grounded, a drain electrode of the resetting transistor RST and a drain electrode of the source tracking transistor SF are connected with a power supply VDD, a source electrode of the source tracking transistor SF is connected with a drain electrode of a selection transistor SEL, a source electrode of the selection transistor SEL is an output end which is connected to a column output signal wire, and a grid electrode of the transmission transistor TX is divided into a first grid electrode TX1 and a second grid electrode TX2. A dual-grid structure is adopted on a transmission pipe, and the dark current is reduced by applying different bias voltage in a charge integrating and charge transferring process, so that the well capacity is increased, the potential distribution in a charge transfer route is optimized, the charge transfer can be better facilitated, and the image streaking can be reduced.

A pixel having an electronic shutter suitable for use in a pixel array of an imaging device includes a pinned diode and a shutter transistor. The pinned diode is utilized as a storage device while the shutter transistor controls charge transfer from the electronic shutter. The use of a pinned diode as a charge storage device for the electronic shutter permits greater charge transfer efficiency, has lower leakage (or “dark” current), and permits the resulting pixel to have a greater fill factor than pixels utilizing conventional electronic shutter circuits.

A unit pixel of a complementary metal-oxide semiconductor (CMOS) image sensor includes a photoelectric conversion element, a transfer transistor, a boosting capacitor and a signal transfer circuit, where the photoelectric conversion element generates a charge based on incident light, the transfer transistor transfers the charge to a floating diffusion node in response to a transfer control signal, the boosting capacitor is disposed between a gate of the transfer transistor and the floating diffusion node, the signal transfer circuit transfers an electric potential of the floating diffusion node in response to a selection signal, and a dynamic range of the electric potential of the floating diffusion node may be widened and a drain-source voltage difference of the transfer transistor may be increased so that the charge transfer efficiency may be enhanced.

The invention provides a preparation method of an ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalyst. The preparation method of the ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalystcomprises the following steps of S1, preparing ultrathin 2D WO3 nanosheets; S2, preparing ultrathin 2D g-C3N4 nanosheets; S3, preparing the ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalystthrough the ultrathin 2D WO3 nanosheets and the ultrathin 2D g-C3N4 nanosheets. The invention also provides the ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalyst. The ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalyst is composed of 2D WO3 and 2D g-C3N4 at a weight ratio of 1-3:10. The type-Z energy band structure of the ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalyst improves the photocatalytic efficiency; meanwhile, face-to-fact contacted 2D / 2D heterojunction can present a large interfacial contact area and a smaller interfacial resistance, thereby improving the charge transfer efficiency and further improving the photocatalytic performance and stability.

An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.

The invention relates to a time-sharing multiplex charge pump circuit with low cost and high efficiency, belonging to the fields of the analog integrated circuit design and LCD drive circuit design, and particularly relates to the LCD drive circuit design based on an HiFas (High Frequency Amplitude Selection) scanning way. The circuit is characterized in that the system adopts a time-sharing multiplex technology for reducing the design requirements of a technological pressure-resisting value; a space overlapping technology is adopted in the design of a coupling capacitor, therefore, the area of a chip is more rationally utilized. In the design of a polarity conversion circuit, an external capacitor can be saved by flexibly switching the voltage on a capacitor polar plate. In the design of a positive high-pressure charge pump and a negative high-pressure charge pump, a zero bulk-biased technology and a charge sharing technology are used, thus enhancing the charge transferring efficiency and reducing the internal friction of the circuit. By utilizing the technologies, the circuit can substantially reduce design cost and enhance circuit efficiency.

Provided are a low-noise image sensor capable of improving the efficiency of charge transfer from a photodiode to a diffusion node region and effectively suppressing the generation of dark current, and a transistor for the image sensor. The image sensor includes: a photosensitive pixel having a transfer transistor formed in a structure which causes hole accumulation in a part or all regions of a gate oxide; and a sensing control part applying a negative offset potential to the gate during a part or whole of a turn-off period of the transfer transistor. When the transfer transistor is off, the image sensor may form a sufficient barrier and accumulate electrons in the photodiode, and when the transistor is on, the sensor sufficiently lowers a barrier, fully depletes the photodiode before the transfer transistor reaches a threshold voltage, and inactivates a trap in a predetermined region for a certain time, and thus the dark current can be reduced.

The invention belongs to the technical field of battery preparation and in particular relates to a metal ion battery and a preparation method thereof. The battery comprises a substrate and positive and negative fibers wound around the substrate, wherein the positive fiber and the negative fiber are intertwined; the positive fiber is a conductive polymer / carbon nanotube composite fiber; the negative fiber is a zinc / carbon nanotube composite fiber; the positive fiber and the negative fiber are obtained by a step of applying a gel electrolyte. The battery uses the structural design in which the positive fiber and the negative fiber are first spirally wound and then wound around the substrate, which can improve the electrochemical performance of the battery and the charge transfer efficiency of the positive and negative electrodes, so that the battery has low resistance and good rate performance. The positive electrode and the negative electrode of the battery are both self-supported electrodes, and do not need a conductive agent and a binder, which greatly reduces the inert components in the battery and contributes to an increase in the energy density of the battery.

The invention discloses a perovskite solar cell device for modifying a hole transport layer and a preparation method thereof. the solar cell device comprises a transparent substrate, an anode, a holetransport layer, an absorbing layer, an electron transport layer, amodified layer and a cathode which are sequentially superposed; the invention uses ethanol solution of ethyl acetate to modify the surface of the hole transport layer, so that its surface has some effective groups, which can effectively promote the crystallization of perovskite thin film, It is advantageous to form more flat and compact perovskite thin film, to improve carrier mobility and diffusion length, to improve charge transfer efficiency, to effectively increase short circuit current, to improve device efficiency, so asto improve the performance of solar cells and other light-emitting devices, and has been widely used in the preparation of perovskite battery devices.

The invention discloses a tungsten trioxide / titanium dioxide nano heterojunction thin film and a preparation and an application thereof. According to the WO3 / TiO2 nano heterojunction thin film, a nano TiO2 layer is formed on the surface of a WO3 thin film in an epitaxial growth manner on the basis of the double-matching relationship of WO3 and TiO2 energy level matching and lattice matching; and the preparation method comprises the following steps: putting the WO3 thin film into a water solution containing ammonium hexafluorotitanate (10-20mM) and boric acid (50-100mM), and carrying out treatment at a constant temperature of 25-50 DEG C for 1-70 hours; and taking out the thin film, washing the thin film with deionized water for over 1min and carrying out natural drying to obtain the WO3 / TiO2 nano heterojunction thin film. The WO3 / TiO2 nano heterojunction thin film has good visible-light absorption capability, good stability, high photoelectric efficiency and charge transfer efficiency, and can be widely applied to the fields of photocatalysis, photoelectrocatalysis, a photocatalytic wastewater fuel cell, a sensor and the like.

The invention discloses a method for testing all performance parameters of an EMCCD chip based on Labview. A test system of the method is composed of an integrating sphere light source with continuously adjustable light intensity, a low-light illuminometer, a grating monochromator, a camera obscura, an electronic control box and an NI professional industrial personal computer. Based on a Labview platform, control of each component of the test system, test environment information recording and performance parameter algorithm calculation are combined together. 15 parameters including blind pixelrate, charge-voltage conversion factor, charge transfer efficiency, quantum efficiency, spectral response rate, detection sensitivity, dynamic range, readout noise, full well charge, dark signal, dark signal non-uniformity, photon response non-uniformity, gain multiple, noise factor and multiplication equivalent readout noise are tested; not only can the test performance of the EMCCD chip be completely evaluated, but also the test time is greatly shortened, and the requirements of test personnel on the basic knowledge of the EMCCD are reduced; the test result is accurate and reliable, the test process is convenient and fast, and the tester burden is small.

The invention discloses a layered tungsten trioxide photoelectrode material and a preparation method thereof and belongs to the technical field of inorganic photoelectric materials. The method includes: using a solvothermal method to grow a tungsten trioxide film on conductive glass FTO to obtain a substrate, and subjecting the substrate to annealing to obtain the layered tungsten trioxide photoelectrode. The method is specifically characterized in that a tungsten source is used as the raw material, the mixed solution of water and ethanol is used as the solvent, and hydrogen peroxide, hydrochloric acid and oxalic acid are added while stirring; the FTO substrate is used as the carrier, tungsten trioxide crystals are grown on the FTO substrate through the solvothermal method, and calcining is performed to obtain a layered tungsten trioxide film. The preparation method is simple, practicable and good in repeatability, and the tungsten trioxide can evenly grow on the surface of FTO; the prepared layered tungsten trioxide photoelectrode has a multilayer structure, so that the photoelectrode and electrolyte have large enough contact area, charge transfer efficiency is increased effectively, photo-induced charge separation is promoted, and the photoelectrochemical property of the tungsten trioxide photoelectrode is increased.

A solid-state imaging device and electronic device with improved charge transfer efficiency from a charge storage unit to a charge-voltage conversion unit via a transfer gate are disclosed. In one example, the solid-state imaging device is configured so that, before an A / D conversion operation for signal level acquisition, a switching unit switches a state to the LG state at least once and to the HG state at least once. A transfer unit is configured to transfer the charge stored in the charge storage unit to the charge-voltage conversion unit at least twice when the state is being switched to the LG state and when the state is being switched to the HG state. A charge-voltage conversion unit adds the charge that is transferred for the LG state and the HG state and convert the added charge into a voltage signal.

The invention discloses a three-dimension carbon cloth / nickel iron layer shaped hydroxide nanosheet composite material and application thereof. A preparation method of the material comprises the following steps: putting carbon cloth into 3 mol / L nitric acid, and enabling the components to react for 2 hours at a reaction temperature of 120 DEG C so as to obtain functionalized three-dimensional carbon cloth; soaking the functionalized three-dimensional carbon cloth into a mixture of ferric nitrate, nickel nitrate, urea and ammonium fluoride, enabling the components to react for 6-10 hours at a reaction temperature of 100-120 DEG C, cooling to a room temperature, washing, and drying, thereby obtaining the three-dimension carbon cloth / nickel iron layer shaped hydroxide nanosheet composite material. The three-dimension carbon cloth / nickel iron layer shaped hydroxide nanosheet composite material can be connected with a working electrode for detecting nitrate ions in water. The material is simple in preparation method, high in charge transfer efficiency, capable of rapidly, efficiently and selectively detecting nitrate ions in the water body relatively wide in linear detection range and relatively low in detection limit.

The invention discloses an organic solar cell with MXene as an anode modification layer material and a manufacturing method thereof. An organic solar cell device includes an anode substrate, an anodemodification layer, an active layer, a cathode modification layer, and a cathode layer. The MXene with high conductivity, high transmission of light, and a work function matching with ITO is taken asthe anode modification layer material to manufacture the organic solar cell device. Firstly, the MXene has the high conductivity so that the charge transfer efficiency of the organic solar cell can beeffectively increased; secondly, the MXene can effectively adjust and control the work function, and reduce an interfacial ability between an anode and an active layer; and finally, compared with a corresponding PEDOT: PSS device, by using the cell and the method, higher photoelectric conversion efficiency is achieved.

A transfer gate is formed such that both end portions thereof in a second direction, which crosses a first direction in which a photodiode and a floating diffusion layer that is formed with a distance from the photodiode are arranged, are located inside boundaries with element isolation regions. Channel stopper layers are formed on surface portions of a device region in the vicinity of lower parts of both end portions of the transfer gate in the second direction in such a manner to extend to the boundaries with the element isolation regions.

The invention discloses a preparation method of a molecularly imprinted photo-electrochemical sensor based on N,S-CDs / CuPc composite material and an application in detection of ochratoxin A (OTA). Onthe basis of the synergistic effect of the co-doping of nitrogen and sulfur and non-covalent functionalization method, the energy level of the carbon point is adjusted correctly, the tight interface contact is optimized, the light absorption range is extended, and the charge transfer efficiency is enhanced to prepare the N,S-CDs / CuPc composite material; and then with combination of the molecular imprinting technology, a molecularly imprinted photo-electrochemical sensor is prepared successfully. According to the invention, the prepared sensor uses the composite material formed by N,S-CDs and CuPc as a photoelectric conversion layer; and the OTA detection is realized by surface modification of a molecularly imprinted membrane containing a toxin recognition site. The sensor has advantages ofwide detection range, high selectivity, and high sensitivity; the detection limit reaches up to 0.51pg.mL<-1>; and the sensor also has stable response and high reproducibility.

More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and / or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.

The invention belongs to the field of solar cells, and discloses a preparation method of a Bi2O2S coated nanorod array and an application thereof in solar cells. The organic solar cell device comprises a cathode substrate, an electron transport layer, an active layer, a hole transport layer and an anode metal. The electron transport layer is made of Bi2O2S coated ZnO nanorods. The organic solar cell of the present invention has high conductivity and good light absorption Bi2O2S by coating an electron transport layer. Firstly, Bi2O2S powder has high conductivity, which can effectively improve the charge transfer efficiency of organic solar cells. Secondly, Bi2O2S can improve the defects of ZnO surface, reduce the trapping of excitons and the recombination of electron-hole pairs. Finally, Bi2O2S-coated ZnO has a strong visible light absorption range, which can enhance the light absorption of the electron transport layer and ultimately improve the photoelectric conversion efficiency of organic solar cells.