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Charge transfer efficiency test method of post-neutron irradiation charge coupled device

A technology of charge transfer efficiency and charge-coupled devices, which is applied in the direction of electromagnetic field characteristics, can solve the problems of untestable and inaccurate CTE test, and achieve the effect of simple test method and wide application range

Active Publication Date: 2016-05-11
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology

[0011] The invention proposes a test method for the charge transfer efficiency of a charge-coupled device after neutron irradiation, thereby solving the problem that the CTE test of a CCD is inaccurate or even impossible to test after neutron irradiation

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  • Charge transfer efficiency test method of post-neutron irradiation charge coupled device
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  • Charge transfer efficiency test method of post-neutron irradiation charge coupled device

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Embodiment Construction

[0042] The present invention will be further described below in conjunction with the accompanying drawings: This embodiment provides an example of a method for eliminating the influence of dark signal spikes induced by neutron displacement damage during CCDCTE testing after neutron irradiation in a scientific grade CCD reactor. In this embodiment, the equivalent 1MeV neutron fluence of CCD irradiated by reactor neutrons is respectively 1.0×10 11 n / cm 2 , 5.0×10 11 n / cm 2 , 1.0×10 12 n / cm 2 . The samples after neutron irradiation are tested for CTE on the CCD irradiation effect parameter test system, and the test results are shown in Figure 6 shown.

[0043] In the CTE test process, it is necessary to test under the condition that a certain amount of signal charge packets are injected. Before irradiation, signal charge packets are usually injected in the form of half-saturated light. However, the dark signal spike generated after neutron irradiation is usually larger th...

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Abstract

The invention provides a charge transfer efficiency test method of a post-neutron irradiation charge coupled device. According to the method, when the readout of CCD signal charges occur, an overscanning pixel output unit is additionally adopted; defects which are generated due to the induction of neutron irradiation are made to capture CCD signal charges; captured CCD signal charges are collected in the overscanning pixel output unit; signal charge loss generated by the induction of neutron irradiation can be displayed intuitively through image output; saturated illumination is adopted to eliminate the influence of dark signal peaks on signal charge packets in a process in which the signal charge packets are sequentially transferred between CCD transfer channels; and requirements for the consistency of the size of the signal charge packets in a charge transfer efficiency test (CTE) after different neutron fluence irradiation can be satisfied. With the method adopted, the problem that a CTE test is inaccurate or even if cannot be performed existing on the post-neutron irradiation charge coupled device can be solved.

Description

technical field [0001] The invention relates to a radiation effect test technology, in particular to a method for eliminating the influence of dark signal spikes induced by neutron displacement damage during the test of charge transfer efficiency of a charge-coupled device. Background technique [0002] Charge coupled device (CCD) has the functions of imaging, data processing, communication, etc. It is the core component in the imaging system of spacecraft, and it is widely used in national defense and military affairs. However, CCDs are very sensitive to radiation damage. CCDs used in space radiation or nuclear radiation environments are subject to radiation damage induced by various radiation particles or rays, especially displacement radiation damage and even lead to CCD function failure. Therefore, research on CCD radiation damage and reinforcement technology is one of the key technologies proposed by my country's aerospace sector that needs comprehensive and accelerated...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/08
CPCG01R29/08
Inventor 王祖军黄绍艳姚志斌何宝平刘敏波唐本奇肖志刚盛江坤马武英罗通顶陈伟薛院院
Owner NORTHWEST INST OF NUCLEAR TECH
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