Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultrathin 2D (two-dimensional) WO3/g-C3N4 type-Z heterojunction photocatalyst and preparation method thereof

A 2dg-c3n4, photocatalyst technology, applied in the direction of physical/chemical process catalysts, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of reducing photocatalytic activity, reducing the reduction and oxidation ability of electrons and holes, and achieving an increase in charge Effects of transfer efficiency, small interface resistance, improved performance and stability

Active Publication Date: 2018-09-14
HUAIBEI NORMAL UNIVERSITY
View PDF2 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this g-C 3 N 4 In the type II heterojunction, this typical charge transfer method greatly reduces the reduction and oxidation capabilities of electrons and holes, and then reduces the photocatalytic activity from a thermodynamic point of view.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultrathin 2D (two-dimensional) WO3/g-C3N4 type-Z heterojunction photocatalyst and preparation method thereof
  • Ultrathin 2D (two-dimensional) WO3/g-C3N4 type-Z heterojunction photocatalyst and preparation method thereof
  • Ultrathin 2D (two-dimensional) WO3/g-C3N4 type-Z heterojunction photocatalyst and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] Such as figure 1 As shown, the present invention provides an ultra-thin 2D / 2D WO 3 / g -C 3 N 4 The preparation method of Z-type heterojunction photocatalyst specifically comprises the following steps:

[0034] S1, Preparation of ultrathin 2D WO 3 Nanosheets;

[0035] S2, Preparation of ultrathin 2D g-C 3 N 4 nanosheets; and

[0036] S3, via 2D WO 3 Nanosheets and 2D g-C 3 N 4 Preparation of ultrathin 2D / 2D WO from nanosheets 3 / g -C 3 N 4 heterojunction photocatalysts.

[0037] Specifically, step S1 also includes:

[0038] Step S11, preparing bulk WO 3 ;and

[0039] Step S12, preparing ultra-thin 2D WO 3 Nanosheets.

[0040] Wherein, step S11 specifically includes:

[0041] S111, the Na 2 WO 4 2H 2 O dispersed in HNO 3 solution, stirred well, then centrifuged to collect the yellow precipitate (WO 3 2H 2 O), and washed with water to pH=7;

[0042] In one embodiment of the present invention, the Na of 500mg 2 WO 4 2H 2 O dispersed in 200 mL of...

Embodiment 1

[0055] 50mg of ultra-thin 2D g-C 3 N 4 Nanosheets were dispersed into 80mL of 20vol% lactic acid solution, 10mL of WO 3 The nanosheet suspension is dropped into the above solution, and the pH of the mixed solution is controlled to be close to 4. After continuous stirring for 2 h, the precipitate was collected by centrifugation and washed with deionized water. The resulting product is denoted as 10% WO 3 / g -C 3 N 4 .

Embodiment 2

[0057] Embodiment 2 is basically the same as embodiment 1, the difference is that WO 3 The amount of nanosheet suspension added is 15mL, and the product obtained is recorded as 15% WO 3 / g -C 3 N 4 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method of an ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalyst. The preparation method of the ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalystcomprises the following steps of S1, preparing ultrathin 2D WO3 nanosheets; S2, preparing ultrathin 2D g-C3N4 nanosheets; S3, preparing the ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalystthrough the ultrathin 2D WO3 nanosheets and the ultrathin 2D g-C3N4 nanosheets. The invention also provides the ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalyst. The ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalyst is composed of 2D WO3 and 2D g-C3N4 at a weight ratio of 1-3:10. The type-Z energy band structure of the ultrathin 2D WO3 / g-C3N4 type-Z heterojunction photocatalyst improves the photocatalytic efficiency; meanwhile, face-to-fact contacted 2D / 2D heterojunction can present a large interfacial contact area and a smaller interfacial resistance, thereby improving the charge transfer efficiency and further improving the photocatalytic performance and stability.

Description

technical field [0001] The invention relates to the field of environmental protection and energy functional materials, in particular, to an ultra-thin 2D WO 3 / g -C 3 N 4 Z-type heterojunction photocatalyst and preparation method thereof. Background technique [0002] Photocatalytic hydrogen production has been considered as one of the most promising routes to convert low-density solar energy into directly usable chemical energy. However, it is difficult for a single semiconductor photocatalyst to achieve high photocatalytic activity due to the high recombination probability of photogenerated charge carriers. Constructing a suitable heterojunction system is one of the effective ways to solve this problem. Generally speaking, the design of highly efficient heterojunction photocatalysts mainly focuses on two key points. One is the suitable band-staggered arrangement of the two semiconductor photocatalysts, and the other is the ideal interface between the two semiconductor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01J27/24B01J35/02C01B3/04
CPCC01B3/042B01J27/24C01B2203/1041C01B2203/1005B01J35/40B01J35/39Y02E60/36
Inventor 张金锋代凯公丕锋
Owner HUAIBEI NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products