65results about How to "Improve charge transfer efficiency" patented technology

Provided is a CMOS image sensor including a pinned photodiode and a transfer transistor. The CMOS image sensor includes: a substrate; a gate electrode disposed on the substrate and electrically isolated from the substrate by a gate insulating layer; a first floating region disposed in the substrate of one side of the gate electrode; a first impurity region for a photodiode disposed in the substrate of the other side of the gate electrode; a second floating region disposed in the substrate between the first impurity region for the photodiode and the gate electrode; and a second impurity region for the photodiode disposed in a surface portion of the substrate including the first impurity region for the photodiode and the second floating region.

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.

A solid-state imaging device includes multiple pixels formed of photoelectric converters and pixel transistors; a floating diffusion portion that exists within a region of each of the photoelectric converters when viewed from above; and a vertical transfer gate electrode of a transfer transistor that surrounds at least a portion of each photoelectric converter and is formed in the depth direction of a substrate and makes up the pixel transistor.

The invention relates to a friction nanometer power generator for converting mechanical energy to electric energy and a fabrication method of the friction nanometer power generator. The fabrication method comprises the steps of packaging a flexible substrate layer I, an electrode material layer I, an electrical negative friction layer, an electrical positive friction layer, an electrode material layer II and a flexible substrate layer II according to a sequence, and then connecting the two flexible substrate layer at the outmost layer so that the electrical negative friction layer and the electrical positive friction layer are arranged at intervals to fabricate the friction nanometer power generator, wherein the electrical negative friction layer is fabricated by automatically assembly a friction electrical negative substance on a surface of aerogel. The fabricated friction nanometer power generator for converting the mechanical energy to the electric energy comprises the electrical negative friction layer and the electrical positive friction layer, and the electrical negative frication layer mainly comprises nanometer fiber of the self-assembled friction electrical negative substance. The fabrication method is simple, the fabricated product is low in cost, the sensitivity on mechanical energy of tiny biology is high, the electrical output performance is excellent, and the frication nanometer power generator has favorable application prospect in the field of self power supply sensing and wearability.

A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.

A pixel of an image sensor includes a gate insulation layer formed over a substrate doped with first-type impurities, a transfer gate formed over the gate insulation layer, a photodiode formed in the substrate at one side of the transfer gate, and a floating diffusion node formed in the substrate at the other side of the transfer gate, wherein the transfer gate has a negative bias during a charge integration cycle.

An image sensor includes: a gate structure on a semiconductor layer of a first conductive type; a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a predetermined depth from a surface portion of the semiconductor layer; spacers formed on sidewalls of the gate structure; and a second impurity region of a second conductive type formed in a portion of the semiconductor layer under the first impurity region, wherein the first impurity region includes: a first region of which portion aligned with the one side of the gate structure; a second region aligned with the one of the spacers and having a concentration higher than that of the first region; and a third region apart from the one side of the gate structure with a predetermined distance and having a concentration higher than that of the second region.

The present invention provides an organic field effect transistor and a method of fabricating the transistor. The transistor includes a semiconductive film comprising organic molecules. Probe molecules capable of binding to target molecules are coupled to an outer surface of the semiconductive film such that the interior of the film being substantially free of the probe molecules.

An imager having gates with spacers formed of a high dielectric material. The high dielectric spacer provides larger fringing fields for charge transfer and improves image lag and charge transfer efficiency.