112results about How to "Occurrence is suppressed" patented technology

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

A picture-frame size of a display device including self light-emitting type display elements which are driven by a current is reduced over conventional devices. Transistors for controlling supply of a light-emission enable signal outputted from an emission driver to emission lines are provided between the emission driver and the emission lines. In such a configuration, based on selection signals provided to the transistors, one of the transistors is brought into an on state in each subframe, and each of the transistors is brought into an on state once during one frame period.

A pixel array is provided in which cells are arranged in a matrix. Each cell includes a photodiode, an FD, a transfer transistor, a reset transistor, an amplifying transistor having a gate electrode connected to the FD, a drain connected to a power supply line, and a source connected to a vertical signal line, and an FD wire. The FD wire is provided in a first wiring line, and the vertical signal line is provided in a second wiring line positioned over the first wiring layer. Since the potential of the FD wire follows the potential of the vertical signal line, it is possible to suppress a variation in capacitance occurring in the FD when a position of the vertical signal is shifted, depending on a position of the cell.

An interposer includes a plurality of first connection electrodes each of which is arranged on either of first- and second-side-surface sides of a first principal surface of a substrate; a plurality of second connection electrodes each of which is arranged on either of first- and second-side-surface sides of a second principal surface of the substrate; and a plurality of third connection electrodes each of which is arranged on either of first and second side surfaces. Each of the first connection electrodes has a first portion located away from an edge of the first principal surface, and a second portion extending from the first portion to the edge and connected to the third connection electrode. Each of the second portion of each first connection electrode and the plurality of third connection electrodes has a width smaller than a width of the first portion of each first connection electrode.

The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

A power transmission apparatus for a vehicle includes: a first shift unit; a second shift unit; an electric motor connected to a rotating element of the first shift unit or the second shift unit so that the rotational speed changes in accordance with a gear-shift of the first shift unit or the second shift unit; and a control unit that controls at least one of start timings of inertia phases of the gear-shifts of the first and second shift units using the electric motor, when the gear-shifts of the first and second shift units are performed simultaneously and gear ratios of the first and second shift units are changed in opposite directions. With this control, in the simultaneous gear-shift, the gear-shift of one of the shift units is started and completed in a period from start of the gear-shift of the other shift unit until completion of this gear-shift.

A semiconductor device that can suppress deterioration in crystal quality caused by a lattice mismatch between a substrate and an epitaxial layer and that also can ensure a voltage sustaining performance, and a wafer for forming the semiconductor device. An epitaxial wafer of silicon carbide (SiC), which is used for manufacturing a semiconductor device, includes a low resistance substrate and an epitaxial layer provided thereon. The epitaxial layer is doped with the same dopant as a dopant doped into the substrate, and has a laminated structure including a low concentration layer and an ultrathin high concentration layer. A doping concentration in the low concentration layer is lower than that in the silicon carbide substrate. A doping concentration in the ultrathin high concentration layer is equal to that in the silicon carbide substrate.

A method of manufacturing an electronic component-embedded board is provided which is capable of suppressing warpage without requiring complicated processes at low cost and which offers high productivity and economic efficiency. A worksheet 100 includes insulating layers 21 and 31 on one surface of an approximately rectangular substrate 11, and an electronic component 41 and a plate-like frame member (member) 51 embedded inside the insulating layer 21, wherein the plate-like frame member 51 satisfying the relationship represented by the following formula (1): α1<α3 and α2<α3 . . . (1), is mounted on an unmounted portion of the electronic component 41 on the substrate 11. In the formula, α1, α2 and α3 respectively denote the linear coefficients of thermal expansion (ppm/K) of the electronic component 41, the plate-like frame member 51, and the substrate 11, the respective wiring layers or the respective insulating layers.

A toner fixing apparatus characterized by provision of a provisional fixing portion provided with a provisional fixing component having an infrared heater irradiating infrared radiation onto a printed surface of the web and a main fixing portion provided downstream in the web flow in the provisional fixing portion and nipping the web with heat rollers performing a main fixing operation or having a plurality of main fixing units. According to this invention, a toner fixing apparatus and an electrophotographic printing device including the toner fixing apparatus are provided which display excellent fixing properties during multicolor image formation, excellent heating efficiency and excellent economy with respect to installation space.

An electric rotating machine for a vehicle is equipped with a load dump protector. The load dump protector works to selectively perform a first and a second load dump protection operation to suppress a voltage surge arising from the load dump. When a rate at which an output voltage from the electric rotating machine is determined to be smaller than a given value, the load dump protector waits for stating the first load dump protection operation until the time when a voltage surge arising from changing of switching devices of a rectifier module of the electric rotating machine is expected to be suppressed and then performs the first load dump protection operation. When the rate is greater than the given value, the load dump protector immediately initiates the second load dump protection operation. This ensures the stability in eliminating the risk of a voltage surge arising from the load dump.

In a process of manufacturing polylactide, synthesis of high-quality polymers is achieved with a sufficient degree of vacuum secured. Provided is an apparatus for manufacturing polylactide which includes the steps of preparing lactide through oligomerization of lactic acid and depolymerization of the resulting oligomers, effecting ring-opening polymerization of the lactide, and removing unreacted lactide. The apparatus comprises an exhausting gas treatment device for reducing pressure in the step of removing unreacted lactide. The exhausting gas treatment device includes boilers (81-83) for generating water vapor; a pressure-reducing section having stages each including an ejector (71-73) driven with the water vapor, a condenser (61-63) connected downstream of the ejector, and a hot well tank (41-43) connected to the condenser; and a main condenser 60 and a main hot well tank 40 connected to the main condenser that are disposed on a pipe line through which a gas of the unreacted lactide is suctioned into the pressure-reducing section. The gas of the unreacted lactide is washed away in the main condenser using a liquid containing lactic acid as a main component that has been collected in the main hot well tank.

A reaction liquid destabilizing the dissolved state or dispersed state of a coloring material by being in contact with an ink containing the coloring material on a recording medium, wherein the reaction liquid contains at least calcium ions, glycerin and polyethylene glycols, and wherein the content and ratio of these components are specified.

A solid-state imaging device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal.