183results about How to "Small pixel size" patented technology

A device and method for spatially resolved photodetection and demodulation of temporally modulated electromagnetic waves makes it possible to measure phase, amplitude and offset of a temporally modulated, spatially coded radiation field. A micro-optical element (41) spatially averages a portion (30) of the scene and equally distributes the averaged intensity on two photo sites (51.1.51.2) close to each other. Adjacent to each of these photo sites (51.1) are two storage areas (54.1, 54.2) into which charge from the photo site can be moved quickly (with a speed of several MHz to several tens or even hundreds of MHz) and accumulated essentially free of noise. This is possible by employing the charge-coupled device (CCD) principle. The device combines a high optical fill factor, insensitivity to offset errors, high sensitivity even with little light, simultaneous data acquisition, small pixel size, and maximum efficiency in use of available signal photons for sinusoidal as well as pulsed radiation signals. The device and method may be used in a time-of-flight (TOF) range imaging system without moving parts, offering 2D or 3D range data.

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

The present invention provides a method, system and apparatus for a time stamped visual motion sensor that provides a compact pixel size, higher speed motion detection and accuracy in velocity computation, high resolution, low power integration and reduces the data transfer and computation load of the following digital processor. The present invention provides a visual motion sensor cell that includes a photosensor, an edge detector connected to the photosensor and a time stamp component connected to the edge detector. The edge detector receives inputs from the photosensor and generates a pulse when a moving edge is detected. The time stamp component tracks a time signal and samples a time voltage when the moving edge is detected. The sampled time voltage can be stored until the sampled time voltage is read. In addition, the edge detector can be connected to one or more neighboring photosensors to improve sensitivity and robustness.

The invention describes a laser printing system (100) for illuminating an object moving relative to a laser module of the laser printing system (100) in a working plane (180), the laser module comprising at least two laser arrays of semiconductor lasers and at least one optical element, wherein the optical element is adapted to image laser light emitted by the laser arrays, such that laser light of semiconductor lasers of one laser array is imaged to one pixel in the working plane of the laser printing system, and wherein the laser printing system is a 3D printing system for additive manufacturing and wherein two, three, four or a multitude of laser modules (201, 202) are provided, which are arranged in columns (c1, c2) perpendicular to a direction of movement (250) of the object in the working plane (180), and wherein the columns are staggered with respect to each other such that a first laser module (201) of a first column of laser modules (c1) is adapted to illuminate a first area (y1) of the object and a second laser module (202) of a second column (c2) of laser modules is adapted to illuminate a second area (y2) of the object, wherein the first area (y1) is adjacent to the second area (y2) such that continuous illumination of the object is enabled.

The invention discloses a solid-state imaging device, a drive method thereof and an electronic apparatus using the same. A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes. The electronic apparatus using the solid-state imaging device has increased saturated charge quantity (Qs), improved sensitivity and reduced pixel size. The drive method of the solid-state imaging device can reduce the pseudo color, image retention, noise and color mixture and improve the sensitivity.

Micromachined, CMOS p+-active / n-well diodes are used as infrared sensing elements in uncooled Focal Plane Arrays (FPA). The FPAs are fabricated using a standard CMOS process followed by post-CMOS bulk-micromachining steps without any critical lithography or complicated deposition processes. Micromachining steps include Reactive Ion Etching (RIE) to reach the bulk silicon and anisotropic silicon wet etching together with electrochemical etch-stop technique to obtain thermally isolated p+-active / n-well diodes. The FPAs are monolithically integrated with their readout circuit since they are fabricated in any standard CMOS technology.

A photosensitive pixel includes a photosensor and an externally loadable flag. The photosensor outputs a signal indicative of an intensity of incident light. The externally loadable flag indicates the pixel reset state, and is preferably stored in an in-pixel memory. Pixel reset logic resets the photosensor in accordance with the reset state and an externally applied reset signal.

A thermal infrared detector includes a substrate; a temperature sensor having electrical characteristics changed in accordance with changes in temperature caused by infrared absorption; heat-insulating supporting legs supporting and thermally insulating the temperature sensor and serving as signal lines for reading out electrical signals from the temperature sensor; and an infrared absorption layer in thermal contact the temperature sensor. Each of the temperature sensor, the heat-insulating supporting legs, and the infrared absorption layer is in a different plane and the planes are spatially separated from each other.

A first imager has a relatively high resolution and a relatively narrow first field-of-view. Information about objects in an environment is detected or captured, and used to steer the first field-of-view of the first imager. The sensor(s) may take the form of a second imager with a relatively lower resolution and relatively wider second field-of-view. Alternatively, other types of sensors, for instance presence / absence sensors may be employed. The first field-of-view may be directed toward an object that satisfies one or more conditions, for instance matching a particular SKU. The first field-of-view may track a moving object, for instance via a tracking mirror and actuator. This approach may be employed in retail locations, for example in grocery or convenience stores, for instance to reduce various forms of theft or in industrial environments.

The invention discloses a display panel and a display device. The display panel is characterized in that bright dipping direction and color can be selected through coupling of special modes in a waveguide layer by grating coupling structures; reflective index of a liquid crystal layer can be regulated after voltage exerted on the liquid crystal layer is regulated through an electrode structure by setting the refractive index to be (no, ne) through the grating coupling structures, and display gray level is controlled. Due to the selection action of the grating coupling structures on the bright dipping direction, near-to-eye display capable of being monocular focus can be favorably realized. Light rays can be effectively coupled out from the waveguide layer through the grating couple structures for a few grating periods which are generally short, so that the pixel size can be quite small and high definition display is favorably displayed. Due to selection action of the grating coupling structures on the bright dipping color, color films can be omitted, and all parts can be formed by transparent materials so as to achieve highly-transparent transparency display and virtual / augmented reality display.

The invention describes a solid-state CMOS image sensor array and in particular describes in detail image sensor array pixels having global and rolling shutter capabilities that are using a dual channel transfer-storage gate for charge transfer from a PD to a TX gate well and from the TX gate well onto a FD. The dual channels are stacked above each other where a shallow charge channel is used to drain surface generated dark current away from the pixel structure, while a buried bulk channel provides for standard charge transfer and storage functions. This feature thus improves the sensor noise performance and prevents signal contamination and various shading effects caused by the dark current buildup during a prolonged charge storage sequence in pixels of image sensor arrays using the global shutter mode of operation. Several embodiment of this concept are described including pixels which utilize shared circuitry, a complete PD reset capability, and an efficient anti-blooming control.

A light emitting display including a pixel area having a plurality of pixels, a scan driver for outputting a scan signal for selecting a predetermined pixel among the plurality of pixels of the pixel area, and an emission control signal for allowing a current to flow in the selected pixels. The scan driver includes: a signal generator adapted to generate the scan signal and the emission control signal; a first buffer adapted to transmit the scan signal to the pixel area; and a second buffer adapted to transmit the emission control signal to the pixel area. In the scan driver, the second buffer is smaller than the first buffer. The size of the second buffer is decreased to decrease the size of the scan driver, and / or to decrease the size of the predetermined pixel to get a high definition.

The invention discloses an array substrate preparation method, an array substrate, and an organic light-emitting display device. The preparation method comprises the following steps: (1) sequentially forming a first metal layer, a first insulating material layer and a second metal layer, which cover a thin-film transistor region and a capacitor device region, on a substrate; and (2) etching the second metal layer, the first insulating material layer and the first metal layer with photoresist and a half-tone mask on the second metal layer, forming a source and a drain which are separated, a gate insulating layer and a bottom gate in the thin-film transistor region, and forming a second electrode, a first dielectric layer and a first electrode in the capacitor device region. Thus, the source, the drain, the gate insulating layer and the bottom gate of the thin-film transistor can be etched by one half-tone mask, the second electrode, the first dielectric layer and the first electrode of the capacitor device are formed at the same time, and the process is simplified. The array substrate of the invention has a dual-gate thin-film transistor and a capacitor device connected in parallel with two capacitors. The capacitor capacity is improved on the basis of increasing the driving force.

An image sensor includes a pixel array with a plurality of pixels. Two or more rows of pixels in the pixel array share a control line in the pixel array, and pixels of the two or more rows of pixels that are in a same column of the pixel array are connected to provide output to different column readout lines. A method includes providing a control signal over a control line within a pixel array to pixels in two or more rows of the pixel array, and reading out signals from the pixels in the two or more rows at a same time over different column readout lines. An image sensor includes a pixel array with a plurality of pixels, and two or more columns of pixels in the pixel array may share a control line in the pixel array for receiving a control signal.

An input side of a switched capacitor amplifier section is connected to output sides of transfer transistors of a photoelectric conversion transfer section group comprised of a prescribed number of a plurality of photoelectric conversion transfer sections, each of which has a photodiode and a transfer transistor. An output side of the switched capacitor amplifier section is connected to a vertical signal line. The switched capacitor amplifier section has a signal charge storage section, an amplification transistor whose an input side is connected to the signal charge storage section, a capacitor connected between input and output sides of the amplification transistor and a reset transistor. A voltage at the ground terminal of an inverting amplifier, which is constructed of a constant current load transistor connected to the output side of the amplification transistor via the vertical signal line and the amplification transistor, is controlled by a vertical scanning circuit.

The invention discloses an aspheric lens computer-generated holography interference detecting method based on a liquid crystal spatial light modulator and relates to the field of optical measurement. According to the method, online detection of an aspheric reflector is achieved by a computer-generated holography interference method by the aid of a digital phase-shifting interferometer used for providing a light source, an imaging system and interferogram analysis software and by means of introducing the liquid crystal spatial light modulator to serve as a computer-generated holography carrier. A zero compensation lens is introduced into a testing light path to compensate spherical aberration of the aspheric lens, residual wave aberration is obtained by ZEMAX ray tracing, a mathematical model of the residual wave aberration is obtained according to a Zernike coefficient and a Zernike expression of the wave aberration and is made into a computer-generated hologram by means of computer-generated holography encoding, the computer-generated hologram is loaded on the liquid crystal spatial light modulator and forms reference light after being modulated, and the reference light interferes with testing light. The method can achieve real-time online detection of the aspheric lens by the aid of a powerful interferogram analysis function of the digital phase-shifting interferometer and a real-time computer-generated hologram display function of the liquid crystal spatial light modulator.

A pixel comprising a scan line proximate to a first surface of a substrate and a bias line between the first surface of the substrate and a first terminal of a photosensing element, where a portion of the bias line is substantially parallel to the scan line. The pixel can also comprise a switching element proximate to the first surface of the substrate and aligned with at least a portion of the scan line. The pixel can include the photosensing element proximate to the first surface of the substrate and aligned with at least a portion of the bias line.

The invention discloses an optical eyepiece lens and a head-mounted display device. The optical eyepiece lens sequentially comprises, from a human eye observation side to an image source side and along an optical axis, a diaphragm, a first lens, a second lens, and a third lens. The first lens, the second lens and the third lens all have a refractive index, and each comprise an image plane which faces the observation side and allows imaging light to pass through and an object plane which faces the image source side and allows imaging light to pass through. The first lens and the third lens are positive lenses, and the second lens is a negative lens. The first lens is a biconvex lens, the second lens is a plane-concave lens, a biconcave lens or a meniscus lens, and the third lens is an aspheric lens. The invention provides an optical eyepiece lens and a head-mounted display device which still have good optical performance under the condition that the length of the lens system is shortened.

A display device in accordance with the present invention changes to Vc the voltage of a terminal of a capacitor C2 the other terminal of which is connected to the gate of a driver TFT Q1. Thus, a desired voltage Vda is fed from a source line Sj to the drain of the driver TFT Q1 so as to adjust the threshold voltage Vth of the driver TFT Q1. The device then changes the voltage of the terminal of the capacitor C2 to Va to render the gate voltage of the driver TFT Q1 Vda−Vth−Vc+Va. A power supply voltage Vp is fed from the source of the driver TFT Q1. Controlling the voltages Vda enables the specification of the output current value of the driver TFT Q1 regardless of its threshold voltage Vth.

A projection display system employs one or more color modifying aperture stops, such as apodizing aperture stops, to provide high contrast, balanced color and high throughput. One projection system includes a reflective liquid crystal-on-silicon light valve positioned with a polarizing beam splitter, such as a wire grid polarizing beam splitter, for each of the primary color component light paths to separately impart image information into each of the primary color components of light. A color combiner receives and combines the primary color components of light with imparted image information to provide light representing a polychromatic display image. At least one aperture stop is positioned along at least one of the primary color component light paths to balance relative intensities of the primary color components of light.

A pixel and a pixel array of an image sensor device of the present invention have small pixel sizes by resetting sensed charge using a diode built vertically above a substrate. The pixel and the pixel array also have low noise performance by using a JFET as a source follower transistor for sensing charge. The pixel includes a floating diffusion node configured to sense photo-generated charge, a reset diode configured to reset the floating diffusion node in response to a reset signal, and a junction field effect transistor configured to output a signal having an output voltage level corresponding to a charge level of the floating diffusion node.

This invention provides a harmless detection system for powerful transportation belts, in which, an X ray generator working continuously is set at the side of a being tested object-the powerful transportation belt in the system box and radiation shield, said generator emits X rays passing through the belt to be set at the related position of the opposite side of the transportation belt, which is received by the receiving / control board, which includes that an one-way array composed of photoelectric tubes emits electric signals containing image pixels of the being tested object to be collected orderly after amplification and filtration, after the analog signals are amplified, they pass through a D / A converter and parallel / serial converter to generate parallel image pixel digital signals to be transmitted to a frame capture card in the microcomputer, therefore, said serial data flow is analyzed into a digital signal and a control signal to pass through an image analysis system to generate a detailed analysis report forms to be observed directly on the display or printed.

An organic light emitting diode microdisplay device comprises a substrate including active circuitry (16) for addressing sub-pixels (10, 12, 14) of the device formed on the substrate, a metal anode layer (18), organic layers (22) at least including a light-emitting layer, a cathode layer (26) and encapsulation layers (28). The device includes at least one photonic lattice (24) having different, well-defined spacings for each sub-pixel that is arranged to emit light of a different colour. The device relies entirely on the photonic lattice (24) to determine the colour of light outcoupled from each sub-pixel.

A projection display system employs one or more color modifying aperture stops, such as apodizing aperture stops, to provide high contrast, balanced color and high throughput. One projection system includes a reflective liquid crystal-on-silicon light valve positioned with a polarizing beam splitter, such as a wire grid polarizing beam splitter, for each of the primary color component light paths to separately impart image information into each of the primary color components of light. A color combiner receives and combines the primary color components of light with imparted image information to provide light representing a polychromatic display image. At least one aperture stop is positioned along at least one of the primary color component light paths to balance relative intensities of the primary color components of light.

A photosensitive pixel includes a photosensor and an externally loadable flag. The photosensor outputs a signal indicative of an intensity of incident light. The externally loadable flag indicates the pixel reset state, and is preferably stored in an in-pixel memory. Pixel reset logic resets the photosensor in accordance with the reset state and an externally applied reset signal.

Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.

The invention belongs to the technical field of semiconductor image sensing, and relates to an ultra-wide dynamic range image sensor based on a pixel charge compensation technology. The ultra-wide dynamic range image sensor based on the pixel charge compensation technology is composed of a photoelectric conversion module 1, an upper read-out processing module 21 and a lower read-out processing module 22 for controlling and reading out data of the photoelectric conversion module 1, a column decoding module 3 and an offset signal module 4. A pixel element is integrated with an element for charge compensation near a main photodiode, so pixel output saturation is avoided by compensating charge to an integrating capacitor of the main photodiode under a highlight condition. An apparatus forms a linear response as to the light intensity under a weak light condition, and the linear response is automatically converted into the linear response to a light intensity logarithm under a strong light condition, so as to obtain an extremely wide dynamic range; the amplitude of the output voltage of a pixel circuit is large; a column amplifier circuit does not need to be integrated; an analogue-digital convertor can be directly input; the design flow of the device is simplified; the chip area is saved; and the photoreceptive dynamic range is extremely wide, and the theoretical value can reach up to 200dB.

A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench formed in at least one part of the silicon substrate located around the photoelectric conversion sections. The embedded layer is made of an isolation material having a thermal expansion coefficient larger than silicon oxide and equal to or smaller than silicon.

Provided are a pixel, a display device including the same, and a driving method thereof. A pixel includes: an organic light-emitting diode including an anode and a cathode, a first transistor configured to provide a driving current flowing through the organic light emission diode, a second transistor configured to provide data to a gate of the first transistor in response to a scan signal, a capacitor configured to maintain a difference between a voltage level of the data and a threshold voltage of the first transistor, and a third transistor configured to: sense a change of the threshold voltage of the first transistor in response to a sensing signal, and transfer a reference voltage to a node coupled to the anode when the sensing signal is enabled, wherein a level of the reference voltage is lower than a threshold voltage of the organic light-emitting diode.

The invention discloses a monocrystalline silicon substrate TFT (thin-film transistor) device belonging to the field of semiconductor device preparation. Silicon islands serving as source and drain foundations are etched on the surface of monocrystalline silicon; the surface of each silicon island is covered by at least one layer of insulating material and is perforated; then a gate, a source and a drain are respectively manufactured on one layer or different layers of the insulating materials; finally the source and the drain are connected with the corresponding silicon islands to form the TFT device. The TFT device disclosed by the invention takes the monocrystalline silicon as a substrate; the silicon islands are etched on the monocrystalline silicon substrate and are used as the source and the drain of the TFT device; therefore the performance of the TFT device can be greatly improved.