Method for casting crystal by seed crystal induction

Abstract

The invention relates to a crystal material with a bigger size, which is manufactured by using a seed crystal induction vertical directional solidification casting method, in particular to a polycrystal or monocrystal material suitable for photoelectric application, such as silicon or silicon germanium. A traditional seed crystal used for casting a silicon crystal has a bigger size and higher consumption, thus, the invention provides a seed crystal with a smaller size and lower consumption, a method of casting a polycrystal or a monocrystal with the bigger size by using the seed crystal and the directional solidification method, the crystal material obtained by adopting the method, including a semiconductor crystal, and an application of the seed crystal in manufacturing semiconductor devices.

Description

Technical field [0001] The present invention generally relates to a vertical direction solidification casting method using seed crystal induction, such as vertical temperature gradient solidification crystal growth method (hereinafter also referred to as VGF method) or vertical Bridgman crystal growth method (hereinafter also referred to as VB method) or vertical The Bridgman Stockbadger method (VBS method) manufactures relatively large-sized crystalline materials, especially polycrystalline and single-crystalline semiconductor materials such as silicon or silicon germanium suitable for photovoltaic applications. Background technique [0002] Crystalline silicon-based photovoltaic cells (or photovoltaic cells, solar cells) should have the greatest possible efficiency in converting solar radiation power into current, as well as the longest possible service life and decay rate. This is determined by many factors, such as the purity of the silicon raw material, the type of silicon c...

AI Technical Summary

Problems solved by technology

The specific method is to use the seed crystal induction method. In the VGF, VB or BVS method, a silicon single crystal seed crystal is placed at the bottom of the silicon melt to induce crystal growth. However, many attempts have failed, and none of the crystals obtained polysilicon

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