56results about How to "Increase film density" patented technology

Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate BT stress test with light irradiation is small is manufactured. A transistor includes a gate electrode, an oxide semiconductor film overlapping with part of the gate electrode with a gate insulating film therebetween, and a pair of electrodes in contact with the oxide semiconductor film. The gate insulating film is an insulating film whose film density is higher than or equal to 2.26 g / cm3 and lower than or equal to 2.63 g / cm3 and whose spin density of a signal with a g value of 2.001 is 2×1015 spins / cm3 or less in electron spin resonance.

A solar cell includes a substrate of a first conductive type; an emitter part of a second conductive type positioned at a front surface of the substrate; a first silicon thin film layer positioned on the emitter part and including amorphous silicon containing impurities of the second type that are doped therein; a first transparent conductive layer positioned on the first silicon thin film layer and electrically connected with the emitter part; a first electrode positioned on the first transparent conductive layer and electrically connected with the first transparent conductive layer; and a second electrode positioned on a back surface of the substrate. For example, the first silicon thin film layer includes N+-a-Si:H or N+-a-SiC:H.

The invention discloses a waterborne two-component woodware coating and a preparation method thereof. The waterborne two-component woodware coating is prepared from main agent A and curing agent B. The main agent A comprises high-hydroxyl-value acrylic emulsion, low-hydroxyl-value acrylic emulsion, an aqueous polyurethane dispersion, a film forming auxiliary, a moistening agent, a leveling agent, an antifoaming agent, wax, extinction powder, a thickening agent, a preservative and deionized water, and the curing agent B comprises waterborne isocyanate and a solvent. The waterborne two-component woodware coating uses hydroxyl acrylic and the aqueous polyurethane dispersion as main film forming matters, the waterborne isocyanate serves as a cross-linking agent, the extinction powder and a wax auxiliary are added, curing reaction is performed at the normal temperature, and the coating has the advantages of high hardness, excellent chemical resistance, good scratch resistance, better transparence and simple, economical and reasonable production process, and can be widely applied to products such as wooden furniture and doors and windows.

The invention discloses a flexible substrate with super flexibility and high electrical and thermal conductivity and a preparation method thereof. The method includes the following steps: S1, performing carbide black lead treatment on a polyimide film, doping nanometal to the polyimide film, and performing ion implantation and ion exchange; S2, performing plasma irradiation modification on the surface of the material obtained through the step S1, and forming a heteromorphic surface layer; and S3, forming a metal conductor layer on the heteromorphic surface layer through physical vapor deposition (PVD) or chemical vapor deposition (CVD), and obtaining the flexible substrate with super flexibility, high ductility and high electrical and thermal conductivity. Thus, C-C-FPC, C-C-COF or FCCL flexible circuit substrates with super flexibility, high ductility, high conductivity, high thermal conductivity and high frequency performance can be obtained through the method.

To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.