The invention discloses a method for manufacturing a 50A high-current
fast recovery diode. The method for manufacturing the 50A high-current
fast recovery diode comprises the steps that an N type
semiconductor silicon material is provided to serve as a
semiconductor substrate; the N type
semiconductor substrate is doped with N+ type impurities; the N+ type
impurity layer on one side of the semiconductor substrate is removed; an exposed N-type semiconductor material is doped with dual P+ type impurities; heavy
metal platinum doping is conducted according to the high-temperature
diffusion method; primary
mask photoetching is conducted; glass
powder is arranged in a
passivation groove through knife
coating, high-temperature sinter molding is conducted, and then PN junction glass
passivation is completed; multiple metallization
layers are manufactured on the two sides of a
silicon wafer according to the vacuum
sputtering method; secondary
mask photoetching is conducted; the
silicon wafer is divided into independent dies; a
chip and a lead component are bonded together; the
chip, the lead component and a
diode holder are bonded together in a metallurgical mode through
sintering; a diode cap and the diode holder are welded together in a sealed mode through percussion
welding. According to the method for manufacturing the 50A high-current
fast recovery diode, the manufacturing process based on the method is less influenced by the environment, the technology is mature, the stability and the
repeatability are high, and the method can be widely used for volume production of high-current fast
recovery diodes.